• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.51-52
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• 1994

• Fibers and Polymers
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• 제3권4호
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• pp.147-152
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• 2002

Copper (II) salts are used as metallizing agents in the synthesis of new non-genotoxic direct dyes for cotton. Specifically, cotton fabric is dyed with non-genotoxic disazo direct dyes and then treated with copper salts. The complexes are characterized by neutron activation analysis, absorption spectrometry and standard Salmonella mammalian mutagenicity assay, and the after-treated fabrics are evaluated for lightfastness and washfastness. Direct dyes possessing ortho-propoxy and ortho'-hydroxy substituted systems formed the corresponding nonmutagenic 1:2 dye:metal complex and undergo significant improvement in lightfastness following metallization.

• 한국결정성장학회지
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• 제14권2호
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• pp.58-62
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• 2004

The shape evolution of the interface void of copper metallization for intergrated circuits under electromigration stress is modeled. A 2-dimensional finite-difference numerical method is employed for computing time evolution of the void shape driven by surface diffusion, and the electrostatic problem is solved by boundary element method. When the diffusion coefficient is isotropic, the numerical results agree well with the known case of wedge-shape void evolution. The numerical results for the anisotropic diffusion coefficient show that the initially circular void evolves to become a fatal slitlike shape when the electron wind force is large, while the shape becomes non-fatal and circular as the electron wind force decreases. The results indicate that the open circuit failure caused by slit-like void shape is far less probable to be observed for copper metallization under a normal electromigration stress condition.

• Journal of the Optical Society of Korea
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• 제19권3호
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• pp.217-221
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• 2015

Developing a metallization that has low cost and high efficiency is essential in solar-cell industries, to replace expensive silver-based metallization. Ni/Cu two-step metallization is one way to reduce the cost of solar cells, because the price of copper is about 100 times less than that of silver. Alkaline electroless plating was used for depositing nickel seed layers on the front electrode area. Prior to the nickel deposition process, 2% HF solution was used to remove native oxide, which disturbs uniform nickel plating. In the subsequent step, a nickel sintering process was carried out in $N_2$ gas atmosphere; however, copper was plated by light-induced plating (LIP). Plated nickel has different properties under different bath conditions because nickel electroless plating is a completely chemical process. In this paper, plating bath conditions such as pH and temperature were varied, and the metal layer's structure was analyzed to investigate the adhesion of Ni/Cu metallization. Average adhesion values in the range of 0.2-0.49 N/mm were achieved for samples with no nickel sintering process.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.75-80
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• 2004

In copper metallization, resistivity of copper seed layer is very important. Conventionally MOCVD has been used for this purpose however electroless copper plating is simple process and the resistivity of copper deposit is less than that of copper prepared by MOCVD. In this study electroless copper plating was conducted on different substrate to find optimum conditions of electroless copper plating for electronic applications. To find optimum conditions, the effects and selectivity of activation method on several substrates were investigated. The effects of copper bath composition on morphology were investigated. The effects of pH and stabilizer on deposition rate were also investigated. The optimum pH of the bath was 12 with addition of stabilizer. The resistivity of copper was decreased with addition of stabilizer and alter heat treatment.

• Korean Chemical Engineering Research
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• 제47권2호
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• pp.141-149
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• 2009

초고속 연산용 CMOS(complementary Metal Oxide Semiconductor) 배선재료로 사용되고 있는 구리(Cu)가, 기가급 메모리 소자용 금속 배선 물질에도 사용이 시작되면서 구리 박막에 대한 재료 및 공정이 새로운 조명을 받고 있다. 반도체 금속 배선에 사용하는 수 nm 두께의 구리 박막의 형성에 전해도금(electrodeposition)과 무전해 도금(electroless deposition) 같은 전기화학적 방법을 이용하게 되어서 표면 처리, 전해액 조성과 같은 중요한 요소에 대한 최신 연구 동향을 요약하였다. 구리 박막에서 구리 배선을 제작하여야 하므로 새로운 패턴 기술인 상감기법이 도입되어, 구리도금과 상감기법과의 공정 일치성 관점에서 전해도금과 무전해 도금의 요소 기술에 대해 기술하였다. 구리보다 비저항이 낮아 차세대 소자용 배선에 있어서 적용이 예상되는 은(Ag)을 전기화학적 방법으로 금속 배선에 적용하는 최신 연구에 대하여도 소개하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.86-86
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• 2003

Copper has attracted much attention in the deep submicron ULSI metallization process as a replacement for aluminum due to its lower resistivity and higher electromigration resistance. Electroless copper deposition method is appealing because it yields conformal, high quality copper at relatively low cost and a low processing temperature. In this work, it was investigated that effect of the microstructure of the substrate on the electroless deposition. The mechanism of the nucleation and growth of the palladium nuclei during palladium activation was proposed. Electroless copper deposition on TiN barriers using glyoxylic acid as a reducing agent was also investigated to replace toxic formaldehyde. Furthermore, electroless copper deposition on TaN$\sub$x/ barriers was examined at various nitrogen flow rate during TaN$\sub$x/ deposition. Finally, it was investigated that the effect of plasma treatment of as-deposited TaN$\sub$x/ harriers on the electroless copper deposition.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.233-236
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• 2004

Copper metallization has been used in high-speed logic ULSI devices instead of the conventional aluminum alloy metallization. One of the key issues in copper CMP is the development of slurries that can provide high removal rates. In this study, the effects of slurry chemicals and pH for slurry dispersion stability on Cu CMP process characteristics have been performed. The experiments of copper slurries containing each different alumina and colloidal silica particles were evaluated for their selectivity of copper to TaN and $SiO_{2}$ films. Furthermore, the stability of copper slurries and pH are important parameters in many industries due to problems that can arise as a result of particle settling. So, it was also observed about several variables with various pH.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.20.2-20.2
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• 2007

• 전자공학회논문지A
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• 제31A권10호
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• pp.108-113
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• 1994

The characteristics of the oxidation prevention layers for the copper metallization were investigated. The thin films such as Cr, TiN and Al were used as the oxidation prevention layers for copper. Ultra thin aluminum films were found to prevent the oxidation of copper up to the highest oxidation annealing temperature among the barrier layers examined in this study. It was found that oxygen did not diffuse into copper through aluminum films because of the aluminum oxide layer formed on the aluminum surface and the ultra thin aluminum film could be a good oxidation barrier layer for the copper metallization.