• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.124-128
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• 2019

In this paper, a high temperature plastic film type water level sensor was developed. The high temperature film type water level sensor was manufactured by attaching a copper film to a polyimide film which can be used for a long time at 250℃, by laminating process and patterning the electrode by etching process. For the performance evaluation of the developed film type water level sensor, the temperature dependence of the capacitance was measured, and the deformation was examined after standing for 8 hours in 150℃ air. The developed film type water level sensor can be used at up to 150℃, and can be applied to electric ports and steam devices.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.10
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• pp.1158-1162
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• 2009

Fatigue limit of the copper film coated by Sn was estimated using Goodman diagram and Gerber diagram. To obtain the high cycle fatigue life curve, S-N curve, of the film, the high cycle fatigue test was carried out by applying the constant amplitude load to the film specimen with three different stress ratio of 0.05, 0.3 and 0.5 and the frequency of 40 Hz at room temperature in air. The free-standing film specimen 15.26${\mu}m$ thick was fabricated by etching process. The fatigue limits and S-N curves at the respective stress ratios were determined from the experimental works. It was shown that the S-N curves were dependent on the stress ratio and the fatigue limit was increased with decreasing the stress ratio. The dependency of the fatigue behavior was presented in empirical relationship. Using these relationships, the fatigue limit was predicted.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1783-1786
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• 2007

The copper film coated by Sn is often used in various applications such as LCD, Mobile Phone and etc. Especially, when the film is used as tape carrier package(TCP) of LCD panel, the film is repeatedly applied by mechanical or(and) thermal stress and then is often failed. Therefore, to guarantee the reliability of the electrical devices using the film, the tensile and fatigue characteristics of the film are important. In this study, to obtain the tensile and fatigue characteristics of the film, the specimen was fabricated by etching process to make a smooth specimen of 2000 ${\mu}m$ width, 8000 ${\mu}m$ length and 15.26 ${\mu}m$ thickness. The 2 kinds of specimen were fabricated by other manufacturing process. These specimens had values of Young's modulus(80.2GPa) lower than literature values(108${\sim}$145GPa) for bulk values, but had high values of the yield and ultimate strength as 317MPa and 437MPa, respectively. And fatigue test of load-control with 20Hz frequency was performed.

• Corrosion Science and Technology
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• v.6 no.6
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• pp.304-307
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• 2007

As to the reflection electrode of LCD (liquid crystal displays), silver-copper-gold alloy (hereafter, it is called as ACA (Ag98%, Cu1%, Au1%)) is an effective material of which weathering resistance can be improved more compared with pure silver. However, there is a problem that gold remains on the substrate as residues when ACA is etched in cerium ammonium nitrate solution or phosphoric acid. Gold can not be etched in these etchants as readily as the other two alloying elements. Gold residue has actually been removed physically by brushing etc. This procedure causes damage to the display elements. Another etchant of iodine/potassium iodide generally known as one of the gold etchants can not give precise etch pattern because of remarkable difference in etching rates among silver, copper and gold. The purpose of this research is to obtain a practical etchant for ACA alloy. The results are as follows. The cyanogen complex salt of gold generates when cyanide is used as the etchant, in which gold dissolves considerably. Oxygen reduction is important as the cathodic reaction in the dissolution of gold. A new etchant of sodium cyanide / potassium ferricyanide whose cathodic reduction is stronger than oxygen, can give precise etch patterns in ACA alloy swiftly at room temperature.

• Journal of Surface Science and Engineering
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• v.38 no.2
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• pp.49-54
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• 2005

Flexible copper clad laminates (FCCL) fabricated by sputtering has advantages in fine pitch etching and dimensional accuracy than previous casting or laminating type FCCL, But its lower adhesion is inevitable technical challenge to solve for commercializing it. Chromium (Cr) which strongly reacts with O moiety was used as tie-coating layer in order to improve low adhesion between copper (Cu) and polyimide (PI). Sputtering raw polyimide (SRPI) and casting raw polyimide (CRPI) were used as substrates at this research. PI was pretreated by plasma before sputtering, and each sample was varied with RF power and Cr thickness on sputtering. Peel strength of the FCCL on SRPI was higher than that on CRPI. Adhesion had maximum value when 10 nm of Cr was deposited on SRPI by RF power of 50 W. It seems to be by the formation of Cu-Cr-O solid solution at the metal-PI interface.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.28-31
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• 2003

Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H$_2$O$_2$ 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.276-280
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• 2010

Copper(Cu) as an interconnecting metal layer can replace aluminum (Al) in IC fabrication since Cu has low electrical resistivity, showing high immunity to electromigration compared to Al. However, it is very difficult for copper to be patterned by the dry etching processes. The chemical mechanical polishing (CMP) process has been introduced and widely used as the mainstream patterning technique for Cu in the fabrication of deep submicron integrated circuits in light of its capability to reduce surface roughness. But this process leaves a large amount of residues on the wafer surface, which must be removed by the post-CMP cleaning processes. Copper corrosion is one of the critical issues for the copper metallization process. Thus, in order to understand the copper corrosion problems in post-CMP cleaning solutions and study the effects of DC biases and post-CMP cleaning solution concentrations on the Cu film, a constant voltage was supplied at various concentrations, and then the output currents were measured and recorded with time. Most of the cases, the current was steadily decreased (i.e. resistance was increased by the oxidation). In the lowest concentration case only, the current was steadily increased with the scarce fluctuations. The higher the constant supplied DC voltage values, the higher the initial output current and the saturated current values. However the time to be taken for it to be saturated was almost the same for all the DC supplied voltage values. It was indicated that the oxide formation was not dependent on the supplied voltage values and 1 V was more than enough to form the oxide. With applied voltages lower than 3 V combined with any concentration, the perforation through the oxide film rarely took place due to the insufficient driving force (voltage) and the copper oxidation ceased. However, with the voltage higher than 3 V, the copper ions were started to diffuse out through the oxide film and thus made pores to be formed on the oxide surface, causing the current to increase and a part of the exposed copper film inside the pores gets back to be oxidized and the rest of it was remained without any further oxidation, causing the current back to decrease a little bit. With increasing the applied DC bias value, the shorter time to be taken for copper ions to be diffused out through the copper oxide film. From the discussions above, it could be concluded that the oxide film was formed and grown by the copper ion diffusion first and then the reaction with any oxidant in the post-CMP cleaning solution.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.335-341
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• 2012

Recently, the demand for the miniaturization of printed circuit boards has been increasing, as electronic devices have been sharply downsized. Conventional multi-layered PCBs are limited in terms their use with higher packaging densities. Therefore, a build-up process has been adopted as a new multi-layered PCB manufacturing process. In this process, via-holes are used to connect each conductive layer. After the connection of the interlayers created by electro copper plating, the via-holes are filled with a conductive paste. In this study, a desmear treatment, electroless plating and electroplating were carried out to investigate the optimum processing conditions for Cu via filling on a PCB. The desmear treatment involved swelling, etching, reduction, and an acid dip. A seed layer was formed on the via surface by electroless Cu plating. For Cu via filling, the electroplating of Cu from an acid sulfate bath containing typical additives such as PEG(polyethylene glycol), chloride ions, bis-(3-sodiumsulfopropyl disulfide) (SPS), and Janus Green B(JGB) was carried out. The desmear treatment clearly removes laser drilling residue and improves the surface roughness, which is necessary to ensure good adhesion of the Cu. A homogeneous and thick Cu seed layer was deposited on the samples after the desmear treatment. The 2,2'-Dipyridyl additive significantly improves the seed layer quality. SPS, PEG, and JGB additives are necessary to ensure defect-free bottom-up super filling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.319-325
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• 2017

Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.81.2-81.2
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• 2012

To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.