Browse > Article
http://dx.doi.org/10.4313/TEEM.2003.4.6.028

A Study on the Corrosion Effects by Addition of Complexing Agent in the Copper CMP Process  

Kim, Sang-Yong (PE CMP Team, Dongbu-Anam Semiconductor, Inc.)
Kim, Nam-Hoon (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, In-Pyo (School of Electrical and Electronics Engineering, Chung-Ang University)
Chang, Eui-Goo (School of Electrical and Electronics Engineering, Chung-Ang University)
Seo, Yong-Jin (Department of Electrical Engineering, Daebul University)
Chung, Hun-Sang (Department of Electrical Engineering Chosun University)
Publication Information
Transactions on Electrical and Electronic Materials / v.4, no.6, 2003 , pp. 28-31 More about this Journal
Abstract
Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H$_2$O$_2$ 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.
Keywords
Copper-chemical mechanical polishing (Cu-CMP); Corrosion effect; Complexing agent; Oxidizer; Inhibitors;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
1 Z. Stavreva, D. Zeidler, M. Plotner, and K. Drescher, 'Influence of process parameters on chemicalmechanical polishing of copper', Microelectronic Engineering, Vol. 37, No. 38, p. 143, 1997   DOI   ScienceOn
2 G. Popescum, M. Lauwidjaja, L. Denny, and K. Richardson, 'Aging effect in CMP slurries probed by multiple light scattering', Electrochem. Soc. Proc., Vol. 98, p. 59, 1999
3 S. Y. Kim, J. H. Lim, C. H. Yu, N. H. Kim, and E. G. Chang, 'Roles of Phosphohc Acid in Slurry for Cu and TaN CMP', Trans. on EEM, Vol. 4, No. 2, p. 1, 2003
4 S. Y. Kim, W. S. Lee, and Y. J. Seo, 'Reduction ofplasma process induced damage during HDP IMD deposition', Trans. on EEM, Vol. 3, No. 3, p. 14, 2002
5 C.-J. Park, S.-Y. Kim, and Y.-J. Seo, 'Effects of diluted silica slurry and abrasives on the CMP characteristics', J. of KIEEME(in Korean), Vol. 15, No.10,p.851,2002
6 S. Y. Kim and H. S. Chung, 'A study on characterization and modeling of shallow trench isolation in oxide chemical mechanical polishing' Trans. Joumal of electrical and electronic Materials, Vo1. 2, No. 3, P. 24, 2001
7 S. Y. Kim, J. H. Lim, C. H. Yu, N. H. Kim, and E. G Chang, 'Roles of phosphoric acid in slurry for Cu and TaN CMP', Trans. on EEM, Vol. 4, No. 2, p.I, 2003
8 T.-H. Kim, W.-S. Lee, Y.-J. Seo, C.-I. Kim, and E.-G. Chang, 'A study for global planarization of mltilevelmtal by CMP', J. of KIEEME(m Korean), Vol. 11, No. 12, p. 1084, 1998