• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.16-24
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• 2022

Applications of REBa₂Cu₃O_7-δ tapes require joints with a simple manufacturing process, low resistance and good mechanical properties. In the present study, we successfully developed a copper diffusion joint between Cu-stabilized REBa₂Cu₃O_7-δ tapes that meets the above requirements without solder simply by applying flux, heat and pressurization. After a 3 min thermocompression process at approximately 150 δ and 336 MPa in air, two tapes were directly connected between Cu stabilizers by copper diffusion, which was proven by microstructure analysis. The specific resistivity of the copper diffusion joint reached 5.8 nΩ·cm² (resistance of 0.4 nΩ for a 306 mm splicing length) at 77 K in the self-field. The axial tensile stress reached 200 N without critical current degradation. The results show promise for the preparation of copper diffusion joints to be used in coils, attached tapes, and wire/cable terminals.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.1-289.1
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• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.58-62
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• 2004

The shape evolution of the interface void of copper metallization for intergrated circuits under electromigration stress is modeled. A 2-dimensional finite-difference numerical method is employed for computing time evolution of the void shape driven by surface diffusion, and the electrostatic problem is solved by boundary element method. When the diffusion coefficient is isotropic, the numerical results agree well with the known case of wedge-shape void evolution. The numerical results for the anisotropic diffusion coefficient show that the initially circular void evolves to become a fatal slitlike shape when the electron wind force is large, while the shape becomes non-fatal and circular as the electron wind force decreases. The results indicate that the open circuit failure caused by slit-like void shape is far less probable to be observed for copper metallization under a normal electromigration stress condition.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.21 no.1
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• pp.1-8
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• 2023

The major concern in the deep geological disposal of spent nuclear fuels include sulfide-induced corrosion and stress corrosion cracking of copper canisters. Sulfur diffusion into copper canisters may induce copper embrittlement by causing Cu₂S particle formation along grain boundaries; these sulfide particles can act as crack initiation sites and eventually cause embrittlement. To prevent the formation of Cu₂S along grain boundaries and sulfur-induced copper embrittlement, copper alloys are designed in this study. Alloying elements that can act as chemical anchors to suppress sulfur diffusion and the formation of Cu₂S along grain boundaries are investigated based on the understanding of the microscopic mechanism of sulfur diffusion and Cu₂S precipitation along grain boundaries. Copper alloy ingots are experimentally manufactured to validate the alloying elements. Microstructural analysis using scanning electron microscopy with energy dispersive spectroscopy demonstrates that Cu₂S particles are not formed at grain boundaries but randomly distributed within grains in all the vacuum arc-melted Cu alloys (Cu-Si, Cu-Ag, and Cu-Zr). Further studies will be conducted to evaluate the mechanical and corrosion properties of the developed Cu alloys.

• Fire Science and Engineering
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• v.22 no.5
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• pp.43-47
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• 2008

Recently SIMS has attracted interest as new technique to distinguish the primary and the secondary arc beads. A Cs+ primary ion beam was used to detect the $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ secondary ions which are formed during depth profiles in the copper wires. In this work, we studied thermal diffusion in the copper wire which are occurred with supplying over-current. The results demonstrated that Carbon and Chloride are diffused in PVC-coated copper wire deeper than none PVC-coated. However Oxygen showed the reverse diffusion property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.21-24
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• 1998

The properties of ZrN layer deposited by Sputtering system have been investigated in the application of diffusion barrier layer to copper. ZrN layer exhibited a excellent barrier property up to $700^{\circ}$ and higher resistivity. If an excess $O_2$is protected during the process of ZrN deposition, ZrN layer will be possible to use a diffusion barrier layer to copper.

• Archives of Pharmacal Research
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• v.11 no.2
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• pp.81-86
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• 1988

The transfer of cupric sulfate across the rat small intestine in vitro was studied by perfusion method using the segments of everted rat small intestine. Copper transport was approximately propotional to the metal concentration in the mucosal solution and no difference was observed in the metal transport among rat duodenum, jejunum and ileum. It was suggested from these results that copper transport across the rat small intestine would occur by passive diffusion. The effect of various chelating agents on copper transport across the rat small intestine n vitro and its uptake by the intestine were also studied. Copper transport was greatly enhanced in the presence of EDTA and NTA. Copper uptake decreased to a greater extent in the presence of EPTA and NTA.

• Textile Coloration and Finishing
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• v.7 no.1
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• pp.72-79
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• 1995

The effect of copper sulfate/thiourea on the diffusion and the dye exhaustion of two dyes, C. I. Acid Orange 7 and C. I. Food Yellow 3 in nylon 6 fiber has been studied. The results obtained from the experimetal are as follows : 1) Copper sulfate reacted with thiourea at constant temperature and then generated the colorless trasparent coordination compound, and then combinated end group of carboxyl of nylon 6 fiber. 2) The coordination compound [$Cu_{2}$($TU_{6}$)] ($(SO_{4})_2$) is conducted at pH 5-6 in solution intensity and repulsed the sulfonic acid group of dyes, and therefore the diffusion of dyes is restraint. 3) Dye uptake and diffusion coefficient were decreased in the order of untreated > copper sulfate/thiourea-treated > tannin-treated.

• Journal of Industrial Technology
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• v.20 no.B
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• pp.77-86
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• 2000

In order to observe the pattern forming of copper plate and chemical corrosion reaction, a study on the effect of the process parameters on the formation of micro-pattern by a photochemical etching of copper plate was carried out. The results are as follows : 1) Etching rate increases as the concentration of etchant increases under the regular condition of the temperature by the increasing of diffusion rate to surface. 2) Etching rate increases as the temperature of etchant increases by the fast acting of the material delivery of diffusion to surface under the regular condition of concentration. 3) It was found that etching speed increases as the material delivery of convection rising increased when the aeration speed of etchant increases. This result was from the fact acted by the material delivery of convection rising rather than material delivery of diffusion to the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.