• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• Journal of Environmental Science International
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• v.21 no.5
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• pp.555-562
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• 2012

The experimental determination of equilibrium constants is required to estimate concentrations of reagents and/or products in environmental chemical reactions. For an example, the choice of copper (Cu) complexation reactions was motivated by their fast kinetics and the ease of measurement of Cu by an ion-sensitive electrode. Each individual titrant of sulfate ($SO{_4}^{2-}$) and oxalate ($C_2O{_4}^{2-}$) was expected to have its own unique characteristics, depending on the bonding in Culigands connected to the aqueous species. The complexation reaction of Cu with $SO{_4}^{2-}$ somewhat fast reached equilibrium status compared with $C_2O{_4}^{2-}$. The experimental equilibrium constants ($K_{eq}$) of copper sulfate ($CuSO_4$) and copper oxalate ($CuC_2O_4$) were determined $10^{2.2}$ and $10^{3{\sim}4.3}$, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.9
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• pp.488-493
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• 2004

In this paper, we present the fabrication of copper electrode array and test of electrochemical discharge machining(ECDM) for glass machining. An array of 72 Cu electrodes is used to machine Borofloat33 glass. The height and diameter of a Cu electrode are 400 $\mu\textrm{m}$ and 100 $\mu\textrm{m}$ respectively. It is fabricated by ICP-RIE, Au-Au thermo-compression bonding, and copper electroplating. Borofloat33 glass is machined by the fabricated copper electrode array in 60 seconds at 55 V. The surface roughness of the machined glass is measured and the machined glass is anodically bonded with silicon.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1182-1185
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• 2003

Recently, the research of the nano technology has been done on a lot of area over the world. Especially, the interest of them is much higher for semiconductor companies and other super accuracy processing area. In this thesis, we have approached the characteristic of the tensile and bonding of copper, frequently used to nano wires, by molecular dynamics simulation. And the simulation was done by EAM, Embedded Atom Method which has the most highest accuracy for metal. Then the feature of copper at atom space is understood through the simulation of nano wire.

• Journal of Powder Materials
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• v.21 no.1
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• pp.39-43
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• 2014

Bulk nanostructured copper was fabricated by a shock compaction method using the planar shock wave generated by a single gas gun system. Nano sized powders, average diameter of 100 nm, were compacted into the capsule and target die, which were designed to eliminate the effect of undesired shock wave, and then impacted with an aluminum alloy target at 400 m/s. Microstructure and mechanical properties of the shock compact specimen were analyzed using an optical microscope (OM), scanning electron microscope (SEM), and micro indentation. Hardness results showed low values (approximately 45~80 Hv) similar or slightly higher than those of conventional coarse grained commercial purity copper. This result indicates the poor quality of bonding between particles. Images from OM and SEM also confirmed that no strong bonding was achieved between them due to the insufficient energy and surface oxygen layer of the powders.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.21-30
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• 2002

According the difference of flex substrate, (reel tape), there are three kind assembly types of LCD driver IC is COG, TCP and COF, respectively. The TCP is the maturest in these types for stability of raw material supply and other specification. And TCP is the major assembly type of LCD driver IC and the huge demand from Taiwan's large TFT LCD panel house since this spring. But due to its package structure and the raw material applied in this package, there is some limitation in fine pitch application of this package type, (TCP). So, COF will be very potential in compact and portable application comparison with TCP in the future. There are three kinds assembly methods in COF, one is ACF by using the anisotropic conductive film to connect the copper lead of tape and gold bump of IC, another is eutectic bonding by using the thermo-pressure to joint the copper lead of tape and gold bump of IC, and last is NCP by using non-conductive paste to adhere the copper lead of tape and gold bump of IC. To have a global realization, this paper will briefly review the status of Taiwan's large TFT panel house, the internal driver IC design house, and the back-end assembly house in the beginning. The different material property of raw material, PI tape is also compared in the paper. The more detail of three kinds of COF assembly method will be described and compared in this paper.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.163-169
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• 2024

As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO₂ hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO₂ composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)₂ precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO₂ substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.213-215
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• 2005

• Journal of the Microelectronics and Packaging Society
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• v.20 no.4
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• pp.13-16
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• 2013

A lot of various researches have been going on to use heat spreader for LED module. Nano porous aluminum anodic oxide (AAO) applied LED, which is produced from anodization, is easy and economically advantageous. Convensional LED module is consist of aluminum/adhesive/copper circuit. The polymer adhesive in this module is used as heat spreader. However the thermal emission of LED component is degraded because of low heat conductivity of polymer and also reliability of LED component is reduced. Therefore, AAO in this work was applied to heat spreader of LED module which has higher heat conductivity compare to polymer. Bonding strength between AAO and copper circuit was improved with Ti/Cu seed layer by copper sputtering process (DBC) before the bonding. And this copper circuit has been fabricated by electro plating method. Peel strength of AAO and copper circuit in this work showed range between 1.18~1.45 kgf/cm with anodizing process which is very suitable for high power LED application.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.61-64
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• 2015

In solar industry, numerous researchers reported about cold spray method among various electrode formation technic, but there are no known a bonding mechanism of metal powder. In this study, a cross-section of copper electrode formed by cold spray method was observed and heterogeneous phase between silicon substrate and copper electrode was analyzed using morphology observation technic. SEM and TEM analysis were performed to analyze a crystallinity and distribution shape of heterogeneous copper phase. Molecular dynamics simulation was performed to calculate glass transition temperature of copper metal. In the result, amorphous copper phase was observed near interface between silicon substrate and metal electrode. The results of the molecular dynamics simulation show that an amorphous copper phase could be formed at a temperature below the melting point of copper because cold spraying resulted in a lower glass transition temperature.