• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.727-729
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• 2008

Organic field-effort transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.988-991
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• 2011

We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different device structure as a bottom and top contact FET. Also, we used a $SiO_2$ as a gate insulator and analyzed using a current-voltage (I-V) characteristics of the bottom and top contact CuPc FET device. In order to discuss the channel formation, we were observed the capacitance-gate voltage(C-V) characteristics of the bottom and top contact CuPc FET device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.280-280
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• 2009

In a structure of ITO/CuPc/Al, we have studied that the properties of photovoltaic efficiency of copper phthalocyanine(CuPc) in donor layer using simulation. As a rusult, we have confirmed that anode current density is decreased and anode voltage is increased as increasing the thickness of CuPc. Also, when the light intensities is 10 [$mW/cm^2$], the external quantum efficiency is better than the others at the best wavelength of visible spectrum..

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.825-827
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• 2012

In this study, the variation in surface morphology of copper phthalocyanine (CuPc) thin films treated with a flow of acetone vapor assisted by nitrogen carrier gas was investigated. The CuPc nanorods with similar dimensions were well dispersed throughout the whole film surfaces after ~20 min. of treatment. However, the electronic absorption spectra only changed slightly, which indicates that molecular stacking was not altered during treatment. This treating method is simple and more advantageous compared to other solvent treating technologies such as mixed solvent spray treatment using organic solvents and water since it requires relatively mild treating conditions and does not need the presence of water.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.279-280
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• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.47-52
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• 2007

Organic field-effect transistors (OFETS) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with varying channel length. The CuPc FET device was made a top-contact type and the channel length was a $100\;{\mu}m,\;50\;{\mu}m,\;40\;{\mu}m,\;and\;30\;{\mu}m$ and the channel width was a fixed at 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with varying channel length (L) and we calculated the effective mobility. Also, we measured a capacitance-voltage (C-V) by applied bias voltage with varying frequency at 43, 100, 1000 Hz.

• Proceedings of the KAIS Fall Conference
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• 2002.11a
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• pp.181-184
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• 2002

본 연구에서는 ITO (indium tin oxide) /glass 투명기판 위에 다층구조의 OELD 소자를 진공 열증착법으로 제작하였다. 상부 전극과 하부 전극의 종류에 따른 전류밀도-전압 특성을 측정하였으며, 열적 안정성이 다른 정공 수송충을 사용하여 소자를 제작하고 전기ㆍ광학적 특성을 측정하였다. 사용된 저분자 유기화합물은 발광층으로 녹색의 발광을 가지는 Alq₃(tris-(8-hydroxyquinoline)aluminum)를 사용하였고 정공수송 및 주입층으로는 TPD(triphenyl diamine), α-NPD 그리고 CuPc (Copper phthalocyanine)를 각각 증착하였다. 하부 전극으로 사용된 ITO 투명전극은 면저항이 적을수록 전류밀도가 증가하는 것을 볼 수 있고, 상부 전극의 종류에 따른 전류밀도-전압 특성을 분석한 결과 일함수가 낮은 전극일수륵 전류밀도가 높아지는 것으로 나타났다. 유리전이온도(Tg)가 상대적으로 높은 재료인 α-NPD를 정공수송충으로 사용한 경우 더 양호한 특성을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.981-984
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• 2004

유기 발광소자(OLED)Glass/indium-tin-oxide(ITO)/Cu-Pc(copper-phthalocyanine)N,N'-Bis(3-methylphenyl)-1,1'-biphenylbenzidineltris-(8-hydroquinoline) aluminum(Alq3)/aluminum(Al)의 기본구조로 제작된 OLED에 다양한 전압을 인가하면서, 마이크로파 근접장 현미경을 이용하여 시간에 따른 소자의 전류-전압특성을 측정함으로써 전기적 전도 특성을 연구하였다. 또한 다양한 인가전압의 시간에 따른 EL(electro luminance)을 측정하여 소자의 광학적 특성과 전기적 특성을 연구 비교하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.128-131
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• 2004

유기발광소자(OLED)Glass/indium-tin-oxide(ITO)/Cu-Pc(copper-phthalocyanine)/N.N'-Bis(3-methylphenyl)-1,1'-biphenylbenzidine/tris-(8-hydroquinoline) aluminum(Alq3)/aluminum(Al)의 기본구조로 제작된 OLED에 다양한 전압을 인가하면서, 마이크로파 근접장 현미경을 이용하여 전압인가에 따른 반사계수(S11)와 소자의 전류-전압특성을 측정함으로써 전기적 전도 특성을 연구하였다. 또한 다양한 인가전압에 따른 EL(electro luminance)를 측정하여 소자의 광학적 특성과 전기적 특성을 연구 비교하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.930-933
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.