Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
- /
- Pages.279-280
- /
- 2009
Electrical Properties of CuPc Field-effect Transistor Using CuPc Derivate Material
CuPc 유도체를 사용한 OFET의 전기적 특성 연구
-
Lee, Ho-Shik
(Dongshin Univ.) ;
- Park, Young-Pil (Dongshin Univ.) ;
- Cheon, Min-Woo (Dongshin Univ.) ;
- Kim, Tae-Gon (Dongshin Univ.) ;
- Kim, Young-Phyo (Dongshin Univ.)
- Published : 2009.06.18
Abstract
Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was