• 제목/요약/키워드: Copper Nucleation

검색결과 46건 처리시간 0.022초

Copper Electroplating on Mg Alloy in Pyrophosphate Solution

  • Van Phuong, Nguyen;Moon, Sungmo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2016년도 추계학술대회 논문집
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    • pp.124.1-124.1
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    • 2016
  • In this work, uniform thickness and good adhesion of electrodeposited copper layer were achieved on AZ91 Mg alloy in alkaline noncyanide copper solution containing pyrophosphate ion by employing appropriate zincate pretreatment. Without zincate pretreatment, the electrodeposited copper layer on AZ91 Mg alloy was porous and showed poor adhesion which was explained by small number of nucleation sites of copper due to rapid dissolution of the magnesium substrate in the pyrophosphate solution. The zincate pretreatment was found as one of the most important steps that can form a conducting layer to cover AZ91 surface which decreased the dissolution rate of AZ91 Mg alloy about 40 times in the copper pyrophosphate solution. Electrodeposited copper layer on AZ91 Mg alloy after an appropriate zincate pretreatment showed good adhesion and uniform thickness with bright surface appearance, independent of the deposition time but the surface roughness of the electrodeposited copper layer increased with increasing Cu deposition time.

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Effect of Microstructure of Substrate on the Metallization Characteristics of the Electroless Copper Deposition for ULSI Interconnection Effect of Plasma

  • 홍석우;이용선;박종완
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.86-86
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    • 2003
  • Copper has attracted much attention in the deep submicron ULSI metallization process as a replacement for aluminum due to its lower resistivity and higher electromigration resistance. Electroless copper deposition method is appealing because it yields conformal, high quality copper at relatively low cost and a low processing temperature. In this work, it was investigated that effect of the microstructure of the substrate on the electroless deposition. The mechanism of the nucleation and growth of the palladium nuclei during palladium activation was proposed. Electroless copper deposition on TiN barriers using glyoxylic acid as a reducing agent was also investigated to replace toxic formaldehyde. Furthermore, electroless copper deposition on TaN$\sub$x/ barriers was examined at various nitrogen flow rate during TaN$\sub$x/ deposition. Finally, it was investigated that the effect of plasma treatment of as-deposited TaN$\sub$x/ harriers on the electroless copper deposition.

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Effect of Zincate Treatment of As-Cast AZ91 Mg Alloy on Electrodeposition of Copper in a Copper Pyrophosphate Bath

  • Nguyen, Van Phuong;Park, Min-Sik;Yim, Chang Dong;You, Bong Sun;Moon, Sungmo
    • 한국표면공학회지
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    • 제49권5호
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    • pp.401-407
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    • 2016
  • In this work, effect of zincate treatment of AZ91 Mg alloy on the following electrodeposition of copper was examined in a non-cyanide bath containing pyrophosphate ions in view of surface morphology and adhesion of the electrodeposited copper layer. Without zincate treatment, the electrodeposited copper layer showed very porous structure and poor adhesion. On the other hand, the copper layer electrodeposited on the zincate-treated surface showed dense structure and good adhesion. The dissolution rate of AZ91 Mg alloy after the zincate treatment appeared to decrease about 40 times in the copper pyrophosphate bath, as compared to that of the surface without zincate treatment. The porous morphology and poor adhesion of a copper layer on the AZ91 Mg alloy surface without zincate treatment were attributed to small number of nucleation sites of copper because of rapid dissolution of the magnesium substrate in the pyrophosphate bath. Based on the experimental results, it is concluded that the zincate treatment to form a conducting and protecting layer on the AZ91 Mg alloy surface is essential for successful electrodeposition of a copper layer on AZ91 Mg alloy with good adhesion and dense structure in the copper pyrophosphate bath.

고전류밀도 구리도금에서 첨가제에 따른 전기화학적 특성변화 연구 (Electrochemical Study of the Effect of Additives on High Current Density Copper Electroplating)

  • 심진용;문윤성;이재호
    • 마이크로전자및패키징학회지
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    • 제18권2호
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    • pp.43-48
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    • 2011
  • 구리의 전해정련공정에서의 최대 전류밀도는 350 A/$m^2$ 이며 생산성의 증가를 위해선 고전류밀도가 필요하다. 회전전극(RDE)을 이용하면 구리의 표면 확산층의 두께조절이 가능하게 되며 안정적인 1000 A/$m^2$의 고전류밀도 구리 도 금이 가능하게 된다. 회전 속도 400rpm조건에서 안정적인 고전류밀도 구리 도금이 가능하였다. 구리 전해정련 과정 중 구리표면의 전착특성 향상을 위해 첨가제는 thiourea와 glue가 사용된다. 고전류밀도 조건에서 첨가제의 거동을 알아보기 위 해 구리가 전착되는 영역에서 첨가제의 농도에 따른 potentiodynamic polarization 실험을 하였고, 1000 A/$m^2$ 조건에서 정전류 실험을 하였다. 동일한 선속도를 인가하기 위해 원통형 회전전극을 이용해 구리도금을 하였고, 도금층의 표면조도 측정에서 thiourea가 16 ppm 들어갔을 때 가장 낮은 조도와 안정적인 취성특성을 나타내었다. 첨가되는 glue의 양이 증가할 수록 표면 조도는 증가하였고, 구리도금층의 경도는 큰 차이가 없었다. 결정립 미세화제로 사용되는 thiourea의 첨가량의 증가에 따라 구리의 핵 성장은 미세해졌고, glue 첨가량의 증가에 따라서는 핵 성장이 영향을 받지 않았다.

Electrochemical and surface investigations of copper corrosion in dilute oxychloride solution

  • Gha-Young Kim ;Junhyuk Jang;Jeong-Hyun Woo;Seok Yoon;Jin-Seop Kim
    • Nuclear Engineering and Technology
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    • 제55권8호
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    • pp.2742-2746
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    • 2023
  • The corrosion behavior of copper immersed in dilute oxychloride solution (100 mM) was studied through surface investigation and in-situ monitoring of open-circuit potential. The copper corrosion was initiated with copper dissolution into a form of CuCl-2, resulting in mass decrease within the first 40 h of immersion. This was followed by a hydrolysis reaction initiated by the CuCl-2 at the copper surface, after which oxide products were formed and deposited on the surface, resulting in a mass increase. The formation of nucleation sites for copper oxide and its lateral extension during the corrosion process were examined using focused ion beam (FIB)-scanning electron microscopy (SEM). The presence of metastable compounds such as atacamite (CuCl2·3Cu(OH)2) on the corroded copper surface was revealed by X-ray photoelectron spectra (XPS) and transmission electron microscopy (TEM)-energy dispersive spectrometry (EDS) analysis.

레이저 유도 화학반응을 이용한 fluorocarbon 수지표면 위의 선택적 구리핵의 형성 (Selective nucleation of copper on fluorocarbon-resin surface by Nd:YAG laser-induced chemical reaction)

  • 이홍규;이경철;안민영;이천
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1535-1537
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    • 1999
  • Photochemical defluorination and substitution of fluorocarbon-resin surfaces using a pulsed Nd:YAG laser(266 nm) and copper-sulfate$(CuSO_4)$ aqueous solution were discussed. Interface of copper nuclei and fluorocabon-resin was chemically bonded through oxygen which was photodissociated from water in copper-sulfate aqueous solution under the laser irradiation. The reaction mechanism for chemical surface modification is discussed on the basis of x-ray photoelectron spectroscopy and atomic force microscope analyses.

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동테이프 위의 Bi-계 초전도 후막에서 전구체분말 조성의 영향 (The Effect of the precursor powder composition for Bi-system superconducting thick films on Cu tapes)

  • 한상철;성태현;한영희;이준성;김상준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.65-68
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    • 1999
  • A well oriented Bi2212 superconductor thick films were fabricated by screen printing with a Cu-free Bi-Sr-Ca-O mixture powder on a copper plate and heat-treating at 820-88$0^{\circ}C$ for several minute in air. During the heat-treatment, the printing layer partially melted by reaction between the Cu-free precursor and CuO of the oxidizing copper plate. In the partial melting state, it is believed that the solid phase is Bi-free phase and Cu-rich phase and the composition of the liquid is around Bi : Sr : Ca : Cu = 2 : 2 : 0 : 1. Following the partial melting, the Bi2212 superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. With decreasing the Bi composition in the precursor powder, the critical temperature(T$_{c}$) of the fabricated Bi2212 thick film increased to about 79 K.K.

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Binary Compound Formation upon Copper Dissolution: STM and SXPS Results

  • Hai, N.T.M.;Huemann, S.;Hunger, R.;Jaegermann, W.;Broekmann, P.;Wandelt, K.
    • Corrosion Science and Technology
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    • 제6권4호
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    • pp.198-205
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    • 2007
  • The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

Cu-MOCVD를 위한 TiN기판의 플라즈마 전처리 (Plasma pretreatment of the titanium nitride substrate fur metal organic chemical vapor deposition of copper)

  • 이종무;임종민;박웅
    • 한국재료학회지
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    • 제11권5호
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    • pp.361-366
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    • 2001
  • TiN barrier 막 위에 metal organic chemical vapor deposition (MOCVD)법으로 Cu막을 증착함에 있어 TiN막 표면을 먼저 세정처리하지 않고 바로 Cu막을 증착하려하면 Cu의 핵생성이 어렵고, 그 결과 연속된 Cu막이 형성되지 못한다. 본 연구에서는 SEM, AES, AFM 등의 분석방법을 사용하여 TiN 막 표면에 대한 플라즈마 전처리 세정이 Cu막의 핵생성에 미치는 효과에 관하여 조사하였다. Gu의 전처리 세정방법으로는 direct플라즈마 방식이 원거리 플라즈마 방식보다 훨씬 더 효과적이다. 또한 수소플라즈마 전처리 시 rf-power와 플라즈마 조사시간이 증가함에 따라 세정효과는 더 증대된다. 플라즈마 전처리가 Cu의 핵생성을 고양시키는 원리는 다음과 같다. 플라즈마 내의 수소이온이 TiN과 반응하여 $NH_3$가 됨으로서 질소 성분이 제거되어 TiN이 Ti로 환원된다. Cu는 TiN기판보다는 Ti기판상에서 핵생성이 더 잘 되므로 플라즈마 전처리는 Cu의 핵생성을 돕는 효과를 가져온다.

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세공(細孔)을 갖는 전열면(傳熱面)에서의 핵비등(核沸騰) 열전달(熱傳達)에 관(關)한 연구(硏究) (A study of Nucleate Boiling Heat Transfer from Artificial Nucleation Sites)

  • 임장순
    • 태양에너지
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    • 제1권1호
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    • pp.30-36
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    • 1981
  • Pool Boiling heat transfer from controlled arrays of artificial nucleation sites was studied experimentally. Distilled water were boiled from artificial sites of uniform size, shape and spacing, drilled in superfinished copper horizontal surfaces at site density of 16, 25, 36, 49, 64, 81, 100 per $2.25cm^2$. The results confirm the boiling heat transfer from artificial sites can be improved by increasing the site density N/A or temperature difference ${\Delta}T$ or both. Following experimental correlation were developed for predicting the heat transfer rate from the heating surface which has artificial sites. $$q/A = C(T_s - T_{sat})^{1.811}(N/A)^{0.41}$$

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