• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.132-132
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• 2000

Cu는 Al에 비하여 낮은 저항(1.8 $\mu$$\Omega$-cm)과 높은 EM 저항성을 가지고 있어 미래의 고속 ULSI 배선물질로 그 중요성이 더욱 증가되고 있으며, 현재까지 많은 연구가 진행되고 있다. 따라서, 본 논문에서는 이러한 방법들을 고려하여 CVD Cu의 문제점인 낮은 성장률의 개선과 Cu 박막의 특성을 향상하고자 수소 플라즈마 공정을 이용하여 plasma 전처리가 초기 Cu 핵생성에 미치는 영향에 대하여 연구하였다. 본 실험에 사용된 장비는 Cu RPCVD/MOCVD이다. 초기 Cu 핵의 생성에 있어서의 수소 플라즈마의 효과를 조사하기 위하여 다음과 같은 3가지의 방법으로 행하였다. 첫 번째는 Cu 박막 형성에서 플라즈마를 사용하지 않은 방법, 두 번째는 플라즈마 전처리공정을 행한 뒤, Cu 박막 증착시 플라즈마는 사용하지 않은 방법, 세 번재는 플라즈마 전처리공저을 행한 뒤 Cu 증착시에도 플라즈마를 사용한 방법이다. 이 세가지 방법의 핵생성 차이를 분석하기 위해서 각각 10초, 20초, 40초 증착시킨 후 grain의 크기와 개수를 비교하였다. 또한 플라즈마의 power에 따른 Cu 핵생성율도 조사하였다. 수소 전처리동안 working pressure는 10분 동안 1 torr로 유지되었으며 substrate의 온도는 20$0^{\circ}C$, r.f.power는 100watt로 설정하였다. Cu RPCVD의 증착조건은 r.f.power는 10watt, substrate의 온도는 20$0^{\circ}C$, gas pressure는 1 torr, Ar carrier gas는 50sccm, hydrogen processing gas는 100sccm, bubbler 온도는 4$0^{\circ}C$, gas line의 온돈느 6$0^{\circ}C$, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다.

• Journal of the Korea Convergence Society
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• v.12 no.10
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• pp.129-136
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• 2021

Radiation shields used in medical institutions mainly use lead to manufacture products and fitments. Although lead has excellent processability and economic efficiency, its use is being reduced due to environmental issues when it is disposed of. In addition, when used for a long time, there is a limit to using it as a shielding film, shielding wall, medical device parts, etc. due to cracking and sagging due to gravity. To solve this problem, copper, tin, etc. are used, but tungsten is mostly used because there is a difficulty in the manufacturing process to control the shielding performance. However, it is difficult to compare with other shielding materials because the characteristics according to the type of tungsten are not well presented. Therefore, in this study, a medical radiation shielding sheet was manufactured in the same process using pure tungsten, tungsten carbide, and tungsten oxide, and the particle composition and shielding performance of the sheet cross-section were compared.As a result of comparison, it was found that the shielding performance was excellent in the order of pure tungsten, tungsten carbide, and tungsten oxide.

• Progress in Medical Physics
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• v.32 no.1
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• pp.18-24
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• 2021

Purpose: Kilovoltage computed tomography (kV-CT) is essential for radiation treatment planning. However, kV-CT images are significantly distorted by artifacts when a metallic prosthesis is present in the patient's body. Thus, the accuracies of target delineation and treatment dose calculation are inevitably lowered. We evaluated the accuracy of the calculated doses using an image restoration method with hybrid CT, which was introduced in our previous study. Methods: A cylindrical phantom containing four metals, namely, silver, copper, tin, and tungsten, was scanned using kV-CT and megavoltage CT to produce hybrid CT images. We created six verification plans for three head and neck patients on kV-CT and hybrid CT images of the phantom and calculated their doses. The actual doses were measured with film patches during beam delivery using tomotherapy. We used the gamma evaluation method to compare dose distribution between kV-CT and hybrid CT with three gamma criteria, namely, 3%/3 mm, 2%/2 mm, and 1%/1 mm. Results: The gamma pass rates decreased as the gamma criteria were strengthened, and the pass rate of hybrid CT was higher than that of kV-CT in all cases. When the 1%/1 mm criterion was used, the difference in gamma pass rates between them was up to 13%p. Conclusions: According to our findings, we expect that the use of hybrid CT can be a suitable approach to avoid the effect of severe metal artifacts on the accuracy of dose calculation and contouring.

• Current Photovoltaic Research
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• v.8 no.4
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• pp.114-119
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• 2020

In this study, Mitigation of Potential-induced degradation (PID) for PERC solar cells using SiO2 Structure of ARC layer. The conventional PID test was conducted with a cell-level test based on the IEC-62804 test standard, but a copper PID test device was manufactured to increase the PID detection rate. The accelerated aging test was conducted by maintaining 96 hours with a potential difference of 1000 V at a temperature of 60℃. As a result, the PERC solar cell of SiO2-Free ARC structure decreased 22.11% compared to the initial efficiency, and the PERC solar cell of the Upper-SiO2 ARC structure decreased 30.78% of the initial efficiency and the PID reliability was not good. However, the PERC solar cell with the lower-SiO2 ARC structure reduced only 2.44%, effectively mitigating the degradation of PID. Na+ ions in the cover glass generate PID on the surface of the PERC solar cell. In order to prevent PID, the structure of SiNx and SiO2 thin films of the ARC layer is important. SiO2 thin film must be deposited on bottom of ARC layer and the surface of the PERC solar cell N-type emitter to prevent surface recombination and stacking fault defects of the PERC solar cell and mitigated PID degradation.

• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.7-16
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• 2015

Effects of chemical composition ($Cu^{2+}$, $K_4P_2O_7$ and additive concentrations) of baths on properties of Cu thin films electrodeposited from pyrophosphate copper bath were investigated. Current efficiency was increased to be near 100% with increasing $Cu^{2+}$ concentrations from 0.02 to 0.3M. Decrease of current efficiency was observed in the range of 1.5~1.8M $K_4P_2O_7$ concentration, but current efficiency of about 100% was measured in the ranges of both 0.9~1.3M and 2.1~2.4M. The change of additive concentration did not influenced current efficiency. Residual stress of electrodeposited Cu thin films was measured to be about 20 MPa below 0.15 M $Cu^{2+}$ concentration and increased with the increase of it to 0.25 M. Maximum residual stress of 120MPa was observed at 0.25M $Cu^{2+}$ concentration. On the other hand, residual stress decreased from 80 to near 0 MPa as $K_4P_2O_7$ concentration varied from 0.9 to 2.4M and but The change of additive concentration did not affected on residual stress. $Cu^{2+}$ and $K_4P_2O_7$ concentrations significantly affect on surface morphology of electrodeposited Cu thin films, but additive concentration slightly affected. From XRD analysis, the microstructures of electrodeposited Cu thin film was affected from the changes of $Cu^{2+}$ and $K_4P_2O_7$ concentrations, but not from that of additive concentration. Strong preferred orientation of (111) peak was observed with increasing $Cu^{2+}$ and $K_4P_2O_7$ concentrations.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.3 no.4
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• pp.249-260
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• 1998

To understand the attachment of micro algae and their subsequent growths on artificial surfaces immersed in seawater, the relationship between attachment of diatoms on the immersed artificial substrates and species pool in the surrounding water was investigated. We used acryl slides for the study of diatom attachment and examined the surrounding water samples collected in Incheon Harbour from July 1995 to February 1997. Variations of species composition and abundances by exposure time in seawater were investigated during the early phase of biofilm formation on various substrates, e.g. glass, acryl, titanium, copper and antifouling paint-treated slides. Immigration rates of diatoms to acryl slides during spring and winter were significantly correlated with the abundance of benthic diatoms in surrounding water ($r^2$=0.78, p<0.01, n=42), suggesting that immigration rates were affected by variations of benthic diatom abundances in surrounding water. Immigration coefficient of monoraphid diatoms was 5 times higher than that of biraphid diatoms, but relative abundance of monoraphid diatoms was 3 times lower than that of biraphid diatoms on acryl slides in spring. In winter, immigration coefficient and relative abundance of centric diatoms were higher compared to other raphe forms. These results suggest that the attachment of diatoms seems to be caused by the abundance and immigration coefficients of benthic diatoms in surrounding water. Pennate diatoms predominantly attached to all artificial surfaces throughout all experimental periods. Interestingly, centric diatoms predominantly attached to all artificial surfaces in winter. Hantzschia virgata, Licmophora abbreviata and Melosira nummuloides appeared dominantly on antifouling paint-treated slides, probably being tolerant of the antifouling paint. During incubations, the abundance of attached diatoms increased exponentially on glass, titanium and acryl slides with exposure time. The maximum abundance was highest on glass slide, followed by acryl, titanium, copper and antifouling paint-treated slides. The growth rates of attached diatom community on all artificial surfaces were higher at temperature of $24-25^{\circ}C$ than that of $2-3^{\circ}C$. The growth rate of attached diatoms on glass slide was generally higher compared to other slides during the study period. Dominant morphotypes of observed species with exposure time in seawater were prostrate form Amphora coffeaeformis, fan shape Synedra tabulata, stalk type Licmophora paradoxa and chain type M. nummuloides. A micro-succession in the attached microalgal community was observed. The composition of dominant species seems to be the result of species-specific response to gradually limited space with development of microalgal film.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.7
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• pp.464-471
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• 2013

In this study, the resource efficiency and future metal resource requirement in photovoltaic (PV) production system were evaluated by using material balance data and life cycle assesment (LCA) method. As a result, in the resource efficiency of ferrous and non-ferrous metal, lead and tin had higher resource efficiency than other materials in all PV systems (SC-Si, MC-Si, CI(G)S, CdTe). In the resource efficiency of rare metals, gallium and rhenium in silicon system and rhenium and rhodium in thin-film system ranked as the first and second high resource efficiency. In case of rare earth metal, gadolinium and samarium took higher resource efficiency. The results of the future metal resource requirement in PV systems showed that 2,545,670 ton of aluminium, 92,069 ton of zinc, 22,044 ton of copper, 1,695 ton of tin and 31 ton of nickel will be needed by 2030 in South Korea, except resource recycling supplement.

• Journal of Conservation Science
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• v.31 no.3
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• pp.287-298
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• 2015

The formaldehyde is damage to the metal are known universally. However, the quantification of the damage level and degree of damage is not clear. This study was conducted to test the following steps using a gas corrosion tester, and then evaluated by the optical, chemical and physical measurement. First, it was confirmed the damage level of the metal specimen(silver, copper, iron, lead, brass) by the formaldehyde(0.5, 1, 10, 100, 500ppm). Second, weighted damage to the metal specimens were tested according to the temperature and humidity conditions under damage levels. Third, the damage of accelerated degradation metal specimens were examined under damage levles. As a result, at 500ppm / day, the optical, chemical and physical damage of lead have been identified, the optical damage of all metals are was observed. The optical damage of some specimens were weighted in $25^{\circ}C-50%$, $30^{\circ}C-50%$. Chemical damage to the lead specimen is 2.8 times, 1.3 times were weighted in $30^{\circ}C-80%$, $25^{\circ}C-80%$. Referring to formate ion concentration of the accelerated degradation metal, corrosion products of iron and brass were actived the reaction of the formaldehyde gas, oxide film of lead was blocked the reaction of formaldehyde gas.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.11a
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• pp.7-7
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• 2001

The increasing interest in light weight materials coupled to the need for cost -effective processing have combined to create a significant opportunity for aluminum P/M. particularly in the automotive industry in order to reduce fuel emissions and improve fuel economy at affordable prices. Additional potential markets for Al PIM parts include hand tools. Where moving parts against gravity represents a challenge; and office machinery, where reciprocating forces are important. Aluminum PIM adds light weight, high compressibility. low sintering temperatures. easy machinability and good corrosion resistance to all advantages of conventional iron bm;ed P/rv1. Current commercial alloys are pre-mixed of either the AI-Si-Mg or AL-Cu-Mg-Si type and contain 1.5% ethylene bis-stearamide as an internal lubricant. The powder is compacted in closed dies at pressure of 200-500Mpa and sintered in nitrogen at temperatures between $580~630^{\circ}C$ in continuous muffle furnace. For some applications no further processing is required. although most applications require one or more secondary operations such as sizing and finishing. These sccondary operations improve the dimension. properties or appearance of the finished part. Aluminum is often considered difficult to sinter because of the presence of a stable surface oxide film. Removal of the oxide in iron and copper based is usually achieved through the use of reducing atmospheres. such as hydrogen or dissociated ammonia. In aluminum. this occurs in the solid st,lte through the partial reduction of the aluminum by magncsium to form spinel. This exposcs the underlying metal and facilitates sintering. It has recently been shown that < 0.2% Mg is all that is required. It is noteworthy that most aluminum pre-mixes contain at least 0.5% Mg. The sintering of aluminum alloys can be further enhanced by selective microalloying. Just 100ppm pf tin chnnges the liquid phase sintering kinetics of the 2xxx alloys to produce a tensile strength of 375Mpa. an increilse of nearly 20% over the unmodified alloy. The ductility is unnffected. A similar but different effect occurs by the addition of 100 ppm of Pb to 7xxx alloys. The lend changes the wetting characteristics of the sintering liquid which serves to increase the tensile strength to 440 Mpa. a 40% increase over unmodified aIloys. Current research is predominantly aimed at the development of metal matrix composites. which have a high specific modulus. good wear resistance and a tailorable coefficient of thermal expnnsion. By controlling particle clustering and by engineering the ceramic/matrix interface in order to enhance sintering. very attractive properties can be achicved in the ns-sintered state. I\t an ils-sintered density ilpproaching 99%. these new experimental alloys hnve a modulus of 130 Gpa and an ultimate tensile strength of 212 Mpa in the T4 temper. In contest. unreinforcecl aluminum has a modulus of just 70 Gpa.