• Korean Journal of Materials Research
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• v.8 no.5
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• pp.444-449
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• 1998

There are various shielding materials that have been considered; the use of a metallic plate or the layering of a conductive material on a plastic surface and the insertion of filler in plastics. All of these methods have shown their merits and weakness. Therefore, many studies have concentrated on developing materials that effectively cut down EMI without increase in weights of housing materials. In these respects, this study has focused on investigations of the shielding effect of materials that have electroless nickel plating on the lamella structured micro particles surface with low specific gravity. When a film of electroless nickel were plated on a micro particle surfaces and then mixed with paint, the electromagnetic shielding effects were measured as 63dB. Although these effects were less than that 90dB of the copper plate, trials in a series of 6 times increased the shielding effect by IOdB and is applicable to wide range of EMI shielding.

• Journal of Welding and Joining
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• v.35 no.3
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• pp.7-14
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• 2017

The effect of high temperature-moisture on corrosion and mechanical properties for Sn-0.7Cu, Sn-3.0Ag-0.5Cu (SAC305) solders on flexible substrate was studied using Highly Accelerated Temperature/Humidity Stress Test (HAST) followed by three-point bending test. Both Sn-0.7Cu and SAC305 solders produced the internal $SnO_2$ oxides. Corrosion occurred between the solder and water film near flexible circuit board/copper component. For the SAC305 solder with Ag content, furthermore, octahedral corrosion products were formed near Ag3Sn. For the SAC305 and Sn-0.7Cu solders, the amount of internal oxide increased with the HAST time and the amount of internal oxides was mostly constant regardless of Ag content. The size of the internal oxide was larger for the Sn-0.7Cu solder. Despite of different size of the internal oxide, the fracture time during three-point bending test was not significantly changed. It was because the bending crack was always initiated from the three-point corner of the chip. However, the crack propagation depended on the oxides between the flexible circuit board and the Cu chip. The fracture time of the three-point bending test was dependent more on the crack initiation than on the crack propagation.

• Korean Chemical Engineering Research
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• v.56 no.5
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• pp.705-710
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• 2018

An electrochemical glucose sensor with enzyme-free was fabricated using Pt nanoparticles (Pt NPs) decorated CuO nanoflowers (CuO NFs). 3-D CuO nanoflowers film was directly synthesized on Cu foil by a simple hydrothermal method and Pt NPs were dispersed on the petal surface of CuO NFs through electrochemical deposition. This prepared sample was noted to Pt NPs-CuO NF. Morphology of the Pt NPs-CuO NFs layer was analyzed using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). The electrochemical properties and sensing performances were investigated using cyclic voltammetry (CV) and chronoamperometry (CA) under alkaline condition. The sensor exhibited a high sensitivity, wide liner range and fast response time. Its excellent sensing performance was attributed to the synergistic effect of the Pt NPs and CuO nanostructure.

• Clean Technology
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• v.10 no.3
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• pp.121-130
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• 2004

Pelletizer of dry ice snow produced by adiabatic expansion of liquid carbon dioxide and their blaster were designed and manufactured. The blaster had a high cleaning power against various contaminants on the surface such as stain, oily dirt, lacquer film and paints with low blasting pressure and low consumption of blasting air. The capacity of hopper for dry ice pellet supply was 12 kg and the mass rate of pellet blasting was controlled in 0 to 1.2 kg/min. The impact of the pellets was independent of standoff distance within a certain limiting distance, and dependent on the impact stress, angle and mass rate of dry ice pellet blasting. On the other hand the cleaning power was influenced by thermal properties and surface roughness of the substrates and decreased in the order of glass, copper, brass, steel and acryl. The power was also affected by hardness and adhesion of the contaminant on the substrate, and decreased in the order of grease, epoxy and paint. The noise was detected during blasting in the range of 85 to 100dBA.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.184-184
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• 2001

The effect of neutral ligand(L) on the precursor characteristics of (hfac)Cu(I)-L and on Cu MOCVD Process was studied. The neutral ligands of (hac)Cu(I)-L$_{x}$, such as ATMS(allytrimethylsilane), VTMS(vinyltrimethylsilane), VCH(vinylcyclohexane), MP(4-methyl-1-pentene), ACP(allylcyclopentane), and DMB(3,3-dimethyl-1-butene) were investigated. When the dissociation temperature of Cu(I)-L bond is low, low temperature deposition below $100^{\circ}C$ is possible and the resistivity of the film is low. But thermal stability of the precursor is low in this case. The resistivity is almost the same regardless of L at the deposition temperature range of $125~175^{\circ}C$. The resistivity is increased as the molecular weight of L becomes higher above $225^{\circ}C$ The vapor pressure of the precursor was closely related to the boiling point of L, the lower the boiling point of L, the higher the vapor pressurere.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.185-190
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• 2001

The effect of neutral ligand(L) on the precursor characteristics of (hfac)Cu(I)-L and on Cu MOCVD Process was studied. The neutral ligands of (hac)Cu(I)-L$_{x}$, such as ATMS(allytrimethylsilane), VTMS(vinyltrimethylsilane), VCH(vinylcyclohexane), MP(4-methyl-1-pentene), ACP(allylcyclopentane), and DMB(3,3-dimethyl-1-butene) were investigated. When the dissociation temperature of Cu(I)-L bond is low, low temperature deposition below $100^{\circ}C$ is possible and the resistivity of the film is low. But thermal stability of the precursor is low in this case. The resistivity is almost the same regardless of L at the deposition temperature range of $125~175^{\circ}C$. The resistivity is increased as the molecular weight of L becomes higher above $225^{\circ}C$ The vapor pressure of the precursor was closely related to the boiling point of L, the lower the boiling point of L, the higher the vapor pressurere.

• Journal of Surface Science and Engineering
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• v.43 no.3
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• pp.148-153
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• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

• Journal of Surface Science and Engineering
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• v.53 no.1
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• pp.9-14
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• 2020

CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm^-1 and 474cm^-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

• Journal of Surface Science and Engineering
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• v.49 no.1
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• pp.54-61
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• 2016

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.79-80
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing (CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical planarization/polishing (ECMP) or electro-chemical mechanical planarization was introduced to solve the. technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.