• 제목/요약/키워드: Convergence sub-layer

검색결과 106건 처리시간 0.026초

Electrochemical Properties of a Si3N4 Dielectric Layer Deposited on Anodic Aluminum Oxide for Chemical Sensors

  • Jo, Ye-Won;Lee, Sung-Gap;Yeo, Jin-Ho;Lee, Dong-Jin
    • Transactions on Electrical and Electronic Materials
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    • 제17권3호
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    • pp.159-162
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    • 2016
  • We studied an electrolyte-dielectric metal (EDM) device based on a Si3N4 layer-coated anodic aluminium oxide (AAO) template for chemical sensors. The AAO templates were fabricated using a two-step anodization procedure at 0℃ and 70 V in 0.3 M oxalic acid, after which the Si3N4 was deposited on them using plasma enhanced chemical vapor deposition (PECVD). The average pore size was approximately 106 nm and the depth of the AAO templates was 24.6 nm to 86.5 nm. The Si3N4 layer-coated AAO is more stable than a single AAO template.

전력선 통신과 IEEE 802.15.4를 기반한 이종 홈네트워크를 위한 통합 부계층 구현 (Implementation of Convergence sub-layer for a Heterogeneous Home Network based on Power Line Communication and IEEE 802.15.4)

  • 하재열;전요셉;이감록;허종만;김남훈;권욱현;정범진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
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    • pp.160-162
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    • 2006
  • In this paper, a heterogeneous home network is designed and implemented based on the PLC (power line communications) and the IEEE 802.15.4. This paper presents the need of the heterogeneous home network and the convergence sub-layer. The convergence sub-layer is designed and implemented on the Xelline power line communication modem with IEEE 802.15.4 communication module.

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Cu층 증착시간에 따른 Cu2ZnSnS4 (CZTS) 박막의 특성 (Characterization of the Cu-layer deposition time on Cu2ZnSnS4 (CZTS) Thin Film Solar Cells Fabricated by Electro-deposition)

  • 김윤진;김인영;강명길;문종하;김진혁
    • Current Photovoltaic Research
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    • 제4권1호
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    • pp.16-20
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    • 2016
  • $Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.

티타늄 이소프로폭사이드를 이용한 졸-겔법에 의한 TiN 코팅 cBN 분말 합성 (Synthesis of TiN-Coated cBN Powder by Sol-Gel Method Using Titanium (IV) Isopropoxide)

  • 이윤성;김선욱;이영진;이지선;신동욱;김세훈;김진호
    • 한국전기전자재료학회논문지
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    • 제33권5호
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    • pp.373-379
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    • 2020
  • In this study, TiN-coated cBN (cubic-structure boron nitride) powders were successfully synthesized by a sol-gel method using titanium (IV) isopropoxide (TTIP) and by controlling the heat treatment conditions. After the sol-gel process, amorphous nano-sized TiOx was uniformly coated on the surface of cBN powder particles. The obtained TiOx-coated cBN powders were heated at 1,000~1,300℃ for 1 or 6 h in a flow of 95%N2-5%H2 mixed gas. With increasing temperature, the chemical composition of the TiOx coating layer changed in the order of TiO2→Ti6O11→Ti4O7→TiN due to reduction of the Ti ions. The TiN coating layer was observable in the samples heated at 1,200℃ and appeared as the main phase in the sample heated at 1,300℃. The resulting thickness of the TiN coating layer of the sample heated at 1,300℃ was approximately 45~50 nm.

Mo 패턴을 이용한 3-D 구조의 Cu2ZnSn (SxSe1-x)4 (CZTSSe) 박막형 태양전지 제작 (3-D Structured Cu2ZnSn (SxSe1-x)4 (CZTSSe) Thin Film Solar Cells by Mo Pattern using Photolithography)

  • 조은진;강명길;신형호;윤재호;문종하;김진혁
    • Current Photovoltaic Research
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    • 제5권1호
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    • pp.20-24
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    • 2017
  • Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

마이크로웨이브 응용을 위한 솔-젤법으로 제작한 K(Ta0.6Nb0.4)O3 박막의 유전 특성 (Dielectric Properties of K(Ta0.6Nb0.4)O3 Thin Films Prepared by Sol-Gel Method for Microwave Applications)

  • 권민수;이성갑;김경민;이삼행;김영곤
    • 한국전기전자재료학회논문지
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    • 제31권6호
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    • pp.403-407
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    • 2018
  • In this study, double layer KTN/STO thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.

Zn(Ox,S1-x) 버퍼층 적용을 통한 Cu2ZnSnS4 태양전지 특성 향상 (Improvement of Cu2ZnSnS4 Solar Cell Characteristics with Zn(Ox,S1-x) Buffer Layer)

  • 양기정;심준형;손대호;이상주;김영일;윤도영
    • Korean Chemical Engineering Research
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    • 제55권1호
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    • pp.93-98
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    • 2017
  • 본 실험에서는 $Cu_2ZnSnS_4$(CZTS) 태양전지의 흡수층 상부에 다양한 조성을 갖는 $Zn(O_x,S_{1-x})$ 버퍼층을 적용하여 특성 변화를 살펴보았다. $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$ 그리고 $Zn(O_{0.17},S_{0.83})$의 4가지 단일막의 경우, 전자-정공의 재결합 억제에 유리한 밴드갭 구조를 나타내는 $Zn(O_{0.76},S_{0.24})$ 버퍼층을 소자에 적용했다. $Zn(O_{0.76},S_{0.24})$ 버퍼층을 소자에 적용 시, 흡수층으로부터 S가 버퍼층으로 확산되어 소자 내에서의 버퍼층은 $Zn(O_{0.7},S_{0.3})$의 조성을 나타냈다. CdS 버퍼층의 $E_V$보다 낮은 에너지 준위를 갖는 $Zn(O_{0.7},S_{0.3})$ 버퍼층은 전자-정공 재결합을 효과적으로 억제하기 때문에 CZTS 태양전지의 $J_{SC}$$V_{OC}$ 특성을 향상시켰다. 이를 통해 CdS 버퍼층이 적용된 CZTS 태양전지의 효율인 2.75%가 $Zn(O_{0.7},S_{0.3})$ 버퍼층 적용을 통해 4.86%로 향상되었다.

Effect of AZ31 PEO Coating Layer Formation According to Alginic Acid Concentration in Electrolyte Solution

  • Kim, Min Soo;Kim, Jong Seop;Park, Su Jeong;Koo, Bon Heun
    • 한국재료학회지
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    • 제32권6호
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    • pp.301-306
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    • 2022
  • This study explored the possibility of forming a coating layer containing alginic acid on the surface of a magnesium alloy to be used as a biomaterial. We formed a coating layer on the surface of a magnesium alloy using a plasma electrolytic oxidation process in an electrolytic solution with different amounts of alginic acid (0 g/L ~ 8 g/L). The surface morphology of all samples was observed, and craters and nodules typical of the PEO process were formed. The cross-sectional shape of the samples confirmed that the thickness of the coating layer became thicker as the alginic acid concentration increased. It was confirmed that the thickness and hardness of the sample significantly increase with increasing alginic acid concentration. The porosity of the surface and cross section tended to decrease as the alginic acid concentration increased. The XRD patterns of all samples revealed the formation of MgO, Mg2SiO4, and MgF2 complex phases. Polarization tests were conducted in a Stimulate Body Fluid solution similar to the body's plasma. We found that a high amount of alginic acid concentration in the electrolyte improved the degree of corrosion resistance of the coating layer.

ALD ZnO 버퍼층 증착 온도가 전착 Cu2O 박막 태양전지 소자 특성에 미치는 영향 (The Influence of Deposition Temperature of ALD n-type Buffer ZnO Layer on Device Characteristics of Electrodeposited Cu2O Thin Film Solar Cells)

  • 조재유;트란 휴 만;허재영
    • Current Photovoltaic Research
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    • 제6권1호
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    • pp.21-26
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    • 2018
  • Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.

투명 전도막 개선을 통한 Cu(Inx,Ga1-x)Se2 박막태양전지 효율 향상에 관한 연구 (Improvement of Efficiency of Cu(Inx,Ga1-x)Se2 Thin Film Solar Cell by Enhanced Transparent Conductive Oxide Films)

  • 김기림;손경태;김민영;조성희;신준철;임동건
    • 한국전기전자재료학회논문지
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    • 제27권4호
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    • pp.203-208
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    • 2014
  • In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.