• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.10-16
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• 2003

To analyze the effects of the air-bridge parasitic capacitances on the performance of coplanar waveguide pseudomorphic high electron mobility transistors (CPW PHEMTs), the gate-to-air-bridge ( $C_{ag}$ ) and the drain-to air-bridge ( $C_{ad}$ ) capacitances were taken into account plus the conventional pinched-off cold. FET circuit model. To examine the effects of the parasitic capacitances due to the air-bridges, a variety routing schemes for the air-bridge interconnection were adopted for fabricating the 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate length CPW HEMT's. According to air-bridge schemes, the $S_{21}$ gain is affected considerably. From the results of the fabricated CPW PHEMT, the $C_{ag}$ and $C_{ad}$ is one of the important factor of decreasing the gain of HEMTs.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.61-71
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• 1999

The recent trend toward higher frequencies, miniaturization and lower-cost in wireless communication equipment is demanding high density packaging technologies such flip chip interconnection and multichip module(MCM) as a substitute of conventional plastic package. With analyzing the recently reported research results of the RF flip chip, this paper presents the technical issues and advantages of RF flip chip and suggest the flip chip technologies suitable for the development stage. At first, most of RF flip chips are designed in a coplanar waveguide line instead of microstrip in order to achieve better electrical performance and to avoid the interaction with a substrate. Secondly, eliminating wafer back-side grinding, via formation, and back-side metallization enables the manufacturing cost to be reduced. Finally, the electrical performance of flip chip bonding is much better than that of plastic package and the flip chip interconnection is more suitable for Transmit/Receiver modules at higher frequency. However, the characterization of CPW designed RF flip chip must be thoroughly studied and the Au stud bump bonding shall be suggested at the earlier stage of RF flip chip development.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2351-2358
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• 2014

In this paper, a design method for a compact CPW-fed slot antenna using SRRs is studied. The structure of the proposed slot antenna is a rectangular slot antenna loaded with SRR conductors inside the slot to reduce the antenna size. Optimal design parameters are obtained by analyzing the effects of the gap between the SRR conductors and slot, and the width of the SRR conductors on the input VSWR characteristic. The optimized compact slot antenna operating at 2.45 GHz band is fabricated on an FR4 substrate with a dimension of 36 mm by 30 mm. The length of the proposed compact slot antenna is reduced to 14.3% compared to that of a conventional rectangular slot antenna. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.4-2.49 GHz for a VSWR < 2, and measured gain of 2.3 dBi at 2.45 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.19-25
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• 2015

In this paper, a design method for a CPW-fed slot antenna for harmonic suppression is studied. The structure of the proposed slot antenna is a rectangular slot antenna appended with stepped impedance resonators (SIRs) at both ends of the slot symmetrically. Optimal design parameters are obtained by analyzing the effects of the length and width of the SIRs on the input reflection coefficient. The optimized harmonic-suppressed slot antenna operating at 2.45 GHz WLAN band is fabricated on an FR4 substrate with a dimension of 42 mm by 30 mm. The slot length of the proposed harmonic-suppressed slot antenna is reduced to 33.3% compared to that of a conventional rectangular slot antenna owing to the appended SIRs. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.39-2.49 GHz for a VSWR < 2, and a measured gain of 2.5 dBi at 2.45 GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.157-158
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• 2014

In this paper, a design method for a compact CPW-fed slot antenna using SRRs(split-ring resonators) is studied. The structure of the proposed slot antenna is a rectangular slot antenna loaded with SRR conductors inside the slot to reduce the antenna size. Optimal design parameters are obtained by analyzing the effects of the gap between the SRR conductors and slot, and the width of the SRR conductors on the input reflection coefficient characteristic. The optimized compact slot antenna operating at 2.45 GHz band is fabricated on an FR4 substrate with a dimension of 36 mm by 30 mm. The length of the proposed compact slot antenna is reduced by 14.3% compared to that of a conventional rectangular slot antenna. Experiment results show that the antenna has a desired impedance characteristic with a frequency band of 2.4-2.49 GHz for a VSWR < 2.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.811-820
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• 2006

Ultra wideband CPW batons are proposed in this paper. The proposed talons are consisted of ultra wideband multi-stage Wilkinson dividers and 'X'-shaped $180^{\circ}$ out-of-phase generator. Bottom-bridges and via-holes are used to connect CPW ground lines instead of the conventional air-bridges which require troublesome manual working in fabrication with HMIC(Hybrid Microwave Integrated Circuits) substrates. The proposed CPW batons have ultra wideband of 3 or $10(=F_{figh}/F_{low})$ theoretically, the wideband characteristics and S-parameters of the basis Wilkinson divider are directly converted to those of the proposed batons. The proposed batons are so compact and small compared to the conventional Wilkinson batons because no additional area for out-of-phase section is required. So the size of the proposed batons is exactly the same as that of the basis Wilkinson dividers. As examples, 3-stage and 7-stage wideband Wilkinson dividers are converted to the proposed batons. Their measured operating bandwidth are $1\sim3GHz$ and $0.8\sim5GHz$, respectively, with excellent matching, isolation and power division performances. The measured magnitude and phase balance errors are ${\pm}0.5dB\;and\;0.45\;dB,\;and\;{\pm}5^{\circ}\;and\;{\pm}10^{\circ}C$ over $1\sim3GHz\;and\;0.8\sim5GHz$, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.105-111
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• 2007

In this paper, we designed and fabricated a 3-dB tandem coupler using air-bridge technology for millimeter-wane monolithic integrated circuits, operating at W-band($75{\sim}110\;GHz$) frequency. Tightly edge-coupled CPW line has low directivity due to different even-mode and odd-mode phase velocity. To overcome this disadvantage, a 3-dB tandem coupler which comprises the two-sectional weakly parallel-coupled lines with equal phase velocity was designed at W-band. The proposed coupler was fabricated using air-bridge technology to monolithically materialize the uniplanar coupler structure instead of conventional multilayer or wire bonded structure. From the measurements, the coupling coefficient of $2.9{\sim}3.6\;dB$ and the good phase difference of $91.2{\pm}2.9^{\circ}$ were obtained in broad frequency range of $75{\sim}100\;GHz$.