• Korean Journal of Materials Research
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• v.4 no.7
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• pp.750-758
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• 1994

The purpose of present study is to find out the formation mechanism of hemi-spherical grained(HSG) polysilicon film. Silicon film was deposited using LPCVD. Polycrystalline silicon film was deposited at $575^{\circ}C$ contained crystalline HSG in the amorphous matrix phase. The crystalline HSG can be categorized into two grains : lower grains and upper grains. Lower grains are located at interface between silicon dioxide and silicon film, and upper grains are located at surface. The growth orientations of HSG were identified as (311) or (111) directions for lower grains and perferentially (110) direction for upper grains. This difference of growth orientations seems to be caused by the difference of formation mechanisms. That is, lower grain is formed by soild phase crystallization, on the other hand, upper grain is formed by surface diffusion of silicon atoms. It was thus, proposed that the formation of practical HSG polysilicon film is mainly controlled by surface diffusion of silicon atoms.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.589-592
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• 2005

Micro-forming is a suited technology to manufacture very small metallic parts(several $mm{\sim}{\mu}m$). Micro-forming of $Zr_{62}Cu_{17}Ni_{13}Al_8$ bulk metallic glass(BMG) as a candidate material for this developing process are feasible at a relatively low stress in the supercooled liquid state without any crystallization during hot deformation. In this study, micro-formability of a representative bulk metallic glass, $Zr_{62}Cu_{17}Ni_{13}Al_8$, was investigated for micro-forging of U-shape pattern. Micro-formability was estimated by comparing $R_f$ values $(=A_f/A_g)$, where Ag is cross-sectional area of U groove, and $A_f$ the filled area by material. Microforging process was simulated and analyzed by applying finite element method. FEM simulation results should reasonable agreement with the experimental results when the material properties and simulation conditions such as top die speed, remeshing criteria and boundary conditions tightly controlled. The micro-formability of $Zr_{62}Cu_{17}Ni_{13}Al_8$ was increased with increasing load and time in the temperature range of the supercooled liquid state. Also, FEM Simulation using DEFORM was confirmed to be applicable for the micro-forming process simulation.

• Korean Journal of Materials Research
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• v.31 no.9
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• pp.481-487
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• 2021

ZnO particles are successfully synthesized at 150 ℃ for 30 min using zinc acetate as the Zn source and 1,4-butanediol as solvent using a relatively facile and convenient glycol process. The effect of ammonium hydroxide amounts on the growth behavior and the morphological evolution of ZnO particles are investigated. The prepared ZnO nanoparticle with hexagonal structure exhibits a quasi-spherical shape with an average crystallite size of approximately 30 nm. It is also demonstrated that the morphology of ZnO particles can be controlled by 1,4-butanediol with an additive of ammonium hydroxide. The morphologies of ZnO particles are changed sequentially from a quasi-spherical shape to a rod-like shape and a hexagonal rod shape with a truncated pyramidal tip, exhibiting preferential growth along the [001] direction with increasing ammonium hydroxide amounts. It is demonstrated that much higher OH^- amounts can produce a nano-tip shape grown along the [001] direction at the corners and center of the (001) top polar plane, and a flat hexagonal symmetry shape of the bottom polar plane on ZnO hexagonal prisms. The results indicate that the presence of NH⁴⁺ and OH^- ions in the solution greatly affects the growth behaviors of ZnO particles. A sharp near-band-edge (NBE) emission peak centered at 383 nm in the UV region and a weak broad peak in the visible region between 450 nm and 700 nm are shown in the PL spectra of the ZnO synthesized using the glycol process, regardless of adding ammonium hydroxide. Although the broad peak of the deep-level-emission (DLE) increases with the addition of ammonium hydroxide, it is suggested that the prominent NBE emission peaks indicate that ZnO nanoparticles with good crystallization are obtained under these conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.576-581
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• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.

• Polymer(Korea)
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• v.38 no.5
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• pp.656-663
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• 2014

Atorvastatin calcium-loaded polyoxalate (POX) microspheres were prepared by an emulsion solvent-evaporation/ extraction method of oil-in-oil-in-water ($O_1/O_2/W$) for sustained release. We investigated the release behavior according to initial drug ratio, molecular weight ($M_w$) and concentration of POX and concentration of emulsifier. The microsphere was characterized on the surface, the cross-section morphology and the behavior of atorvastatin calcium release for 10 days by scanning electron microscopy (SEM) and high performance liquid chromatography (HPLC). The analysis of crystallization was analyzed to use X-ray diffraction (XRD), differential scanning calorimeter (DSC) and Fourier transform infrared (FTIR). These results showed that the release behaviors can be controlled by preparation conditions.

• Journal of the Mineralogical Society of Korea
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• v.17 no.1
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• pp.11-21
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• 2004

Crystallization of CaC $O_3$ from the solutions of various degrees of supersaturation was carried out by a spontaneous precipitation method. The solution was kept at $25^{\circ}C$ and pH 6.9∼8.8. The solution compositions were varied in two ways: (1) The total carbonate, [C $O_3$]$_{Τ}$, to total calcium. [Ca]$_{Τ}$, ratios vary as ; [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$ >1. [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$=1, and [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$<1. (2) The total calcium concentration, [Ca]$_{Τ}$, held at 0.02 mo1/d $m^3$, 0.2 mo1/d $m^3$, and 0.4 mo1/d $m^3$. We found that the CaC $O_3$ phase crystallized from the solutions of [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$ $\geq$ 1 was mostly calcite with less than 1% of vaterite, while the CaC $O_3$ crystals precipitated from low carbonate concentration toward calcium concentration, [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$ < 1, were dominated by vaterite crystals. It appears that the polymorph of CaC $O_3$ precipitate was mainly controlled not by the calcium concentration but by the carbonate concentration during the spontaneous precipitation. Also, we found that the surface roughness of vaterite increased with decreasing carbonate concentration from 0.8 or 0.5 of [C $O_3$]$_{Τ}$/[Ca]$_{Τ}$ ratios and the surface area of vaterite increased from 5.64∼7.34 $\mu\textrm{m}$ to 8.39∼10.3 $\mu\textrm{m}$.

• Polymer(Korea)
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• v.34 no.3
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• pp.269-273
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• 2010

The primary objective of this work is to find the optimal condition for the granule tablet formulation of alfuzosin-HCl that aims to achieve a sustained drug release. (Hydroxypropyl)methyl cellulose (HPMC) is one of the most widely used polymer as a drug formulation and therefore has been utilized in this study as an excipient. Alfuzosin-HCl granule tablet was developed using the various viscosities of HPMC and the effects of viscosity on drug release was investigated. Fourier transform-infrared (FTIR) and X-ray diffraction (XRD) were employed to investigate the chemical structure and crystallization of alfuzosin-HCl in the formulation. We prepared the granule tablet by a direct compression method and studied the release profile in the stimulated intestinal fluid (pH 6.8). As the viscosity of HPMC increased the release of alfuzosin-HCl decreased, demonstrating that controlled release of alfuzosin-HCl can be achieved by varying the viscosity of HPMC.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.162-165
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• 2007

We investigated the effects of the capping layer materials on the crystallization of the amorphous top-CoFeB (t-CoFeB) electrode and the magnetoresistance properties of the magnetic tunnel junctions (MTJs). When the hcp(002)-textured Ru capping layer was used, the amorphous t-CoFeB was crystallized to bcc-CoFe(110). The CoFe(110)/Ru(002) texture relation can be minimized the lattice mismatch down to 5.6%. However, when the fine polycrystalline but almost amorphous TiAl or amorphous ZrAl were used, the amorphous t-CoFeB was crystallized to bcc-CoFe(002). When the amorphous capping materials were used, the evolution of the t-CoFeB texture was affected mainly by the MgO(001) texture. Consequently, the M ratios of the annealed MTJ capped with the ZrAl and TiAl (72.7 and 71.8%) are relatively higher than that of the MTJ with Ru capping layer (46.7%). In conclusions, the texture evolution of the amorphous t-CoFeB during the post deposition annealing could be controlled by the crystallinity of the adjacent capping layer and in turn, it affects the TMR ratio of MTJs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.