• Title/Summary/Keyword: Contact Region

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Removal of Laser Damage in Electrode Formed by Plating in Crystalline Silicon Solar Cells (결정질 실리콘 태양전지에서 도금을 이용한 전극 형성 시 발생되는 레이저 손상 제거)

  • Jeong, Myeong Sang;Kang, Min Gu;Lee, Jeong In;Song, Hee-eun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.6
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    • pp.370-375
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    • 2016
  • In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.

Device characteristics of 2.5kV Gate Commutated Thyristor (2-5kV급 Gate Commutated Thyristor 소자의 제작 특성)

  • Kim, Sang-Cheol;Kim, Hyung-Woo;Seo, Kil-Soo;Kim, Nam-Kyun;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.280-283
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    • 2004
  • This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

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Areas associated with a Strictly Locally Convex Curve

  • Kim, Dong-Soo;Kim, Dong Seo;Kim, Young Ho;Bae, Hyun Seon
    • Kyungpook Mathematical Journal
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    • v.56 no.2
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    • pp.583-595
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    • 2016
  • Archimedes showed that for a point P on a parabola X and a chord AB of X parallel to the tangent of X at P, the area S of the region bounded by the parabola X and chord AB is four thirds of the area T of triangle ${\Delta}ABP$. It is well known that the area U formed by three tangents to a parabola is half of the area T of the triangle formed by joining their points of contact. Recently, the first and third authors of the present paper and others proved that among strictly locally convex curves in the plane ${\mathbb{R}}^2$, these two properties are characteristic ones of parabolas. In this article, in order to generalize the above mentioned property $S={\frac{4}{3}}T$ for parabolas we study strictly locally convex curves in the plane ${\mathbb{R}}^2$ satisfying $S={\lambda}T+{\nu}U$, where ${\lambda}$ and ${\nu}$ are some functions on the curves. As a result, we present two conditions which are necessary and sufficient for a strictly locally convex curve in the plane to be an open arc of a parabola.

Electron Microscopic Observation on Protoplast Fusion of Coryneform Bacteria (Coryne형 세균의 원형질체 융합에 관한 전자현미경적 관찰)

  • Park, Chung;Lim, Bun-Sam;Chun, Moon-Jin;Kim, Woo-Kap
    • Korean Journal of Microbiology
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    • v.23 no.4
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    • pp.265-270
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    • 1985
  • Overall procedure of cell fusion between Brevibacterium flavum and Corynebacterium glutamicum was morphologically observed by transmission electron microscopy. Protoplasts formed by treatment of cells with penicillin G and lysozyme in order were released through the pores generated on a certain region of cell walls to be spherical form. When two different protoplasts were met, cell wall and membrane in the contact zone was disappeared and followed by the mutual exchange of cytoplasmic and/or chromosomal materials. Cell xall regeneration speed of the protoplasts fused was slower than that of the non-fused, whereas the size of the former was confirmed as bigger than that of the latter.

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Effect of Electron Irradiation Energy on the Properties of GZO/SiO2 Thin Films on Polycarbonate (PC 기판위에 증착된 SiO2/GZO박막의 전자빔 조사에너지에 따른 특성 변화)

  • Heo, Sung-Bo;Park, Min-Jae;Jung, Uoo-Chang;Kim, Dae-Il;Cha, Byung-Chul
    • Journal of the Korean institute of surface engineering
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    • v.47 no.6
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    • pp.341-346
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    • 2014
  • Ga-doped ZnO (GZO) single layer and $SiO_2/GZO$ bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of $SiO_2/GZO$ thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron's irradiation energy. The $SiO_2/GZO$ films irradiated at 900 eV were showen the lowest resistivity of $7.8{\times}10^{-3}{\Omega}cm$. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of $58^{\circ}$ in this study.

Smart PZT-interface for wireless impedance-based prestress-loss monitoring in tendon-anchorage connection

  • Nguyen, Khac-Duy;Kim, Jeong-Tae
    • Smart Structures and Systems
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    • v.9 no.6
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    • pp.489-504
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    • 2012
  • For the safety of prestressed structures such as cable-stayed bridges and prestressed concrete bridges, it is very important to ensure the prestress force of cable or tendon. The loss of prestress force could significantly reduce load carrying capacity of the structure and even result in structural collapse. The objective of this study is to present a smart PZT-interface for wireless impedance-based prestress-loss monitoring in tendon-anchorage connection. Firstly, a smart PZT-interface is newly designed for sensitively monitoring of electro-mechanical impedance changes in tendon-anchorage subsystem. To analyze the effect of prestress force, an analytical model of tendon-anchorage is described regarding to the relationship between prestress force and structural parameters of the anchorage contact region. Based on the analytical model, an impedance-based method for monitoring of prestress-loss is conducted using the impedance-sensitive PZT-interface. Secondly, wireless impedance sensor node working on Imote2 platforms, which is interacted with the smart PZT-interface, is outlined. Finally, experiment on a lab-scale tendon-anchorage of a prestressed concrete girder is conducted to evaluate the performance of the smart PZT-interface along with the wireless impedance sensor node on prestress-loss detection. Frequency shift and cross correlation deviation of impedance signature are utilized to estimate impedance variation due to prestress-loss.

Enhanced Self-Cleaning Performance of Ag-F-Codoped TiO2/SiO2 Thin Films

  • Kim, Byeong-Min;Kim, Jung-Sik
    • Korean Journal of Materials Research
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    • v.28 no.11
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    • pp.620-626
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    • 2018
  • Highly self-cleaning thin films of $TiO_2-SiO_2$ co-doped with Ag and F are prepared by the sol-gel method. The asprepared thin films consist of bottom $SiO_2$ and top $TiO_2$ layers which are modified by doping with F, Ag and F-Ag elements. XRD analysis confirms that the prepared thin film is a crystalline anatase phase. UV-vis spectra show that the light absorption of $Ag-F-TiO_2/SiO_2$ thin films is tuned in the visible region. The self-cleaning properties of the prepared films are evaluated by a water contact angle measurement under UV light irradiation. The photocatalytic performances of the thin films are studied using methylene blue dye under both UV and visible light irradiation. The $Ag-F-TiO_2/SiO_2$ thin films exhibit higher photocatalytic activity under both UV and visible light compared with other samples of pure $TiO_2$, Ag-doped $TiO_2$, and F-doped $TiO_2$ films.

Critical evaluation of fracture strength testing for endodontically treated teeth: a finite element analysis study

  • Uzunoglu-Ozyurek, Emel;Eren, Selen Kucukkaya;Eraslan, Oguz;Belli, Sema
    • Restorative Dentistry and Endodontics
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    • v.44 no.2
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    • pp.15.1-15.8
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    • 2019
  • Objectives: The aim of this study was to investigate whether the diameter and direction of the plunger and simulation of the periodontal ligament (PDL) affected the stress distribution in endodontically treated premolars. Methods: A fracture strength test was simulated via finite element analysis. A base model was set up, and the following parameters were modified: plunger diameter (3 mm vs. 6 mm), plunger direction (vertical vs. $135^{\circ}$ angular to the central fossa), and PDL simulation. The analysis was conducted using the CosmosWorks structural analysis program, and the results are presented in terms of von Mises stresses. Results: The smaller plunger increased the stresses at the contact area of the crown, but the plunger diameter had no effect on the stress distribution within the root. An angular plunger direction increased stresses within the root, as well as at the buccal cusp of the crown, compared with the vertical direction. Simulation of the PDL caused higher stress accumulation, especially in the cervical region of the root. Conclusions: The plunger diameter had no effect on the stress distribution in the roots, whereas the plunger direction and PDL simulation did affect the stress distribution. More stringent standards can be established by taking such parameters into account when performing fracture testing in future studies.

Effect of Electrode Formation Process using E-beam Evaporation on Crystalline Silicon Solar Cell (E-Beam evaporation을 이용한 전극 형성 공정이 결정질 실리콘 태양전지에 미치는 영향 분석)

  • Choi, Dongjin;Park, Se Jin;Shin, Seung Hyun;Lee, Changhyun;Bae, Soohyun;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.7 no.1
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    • pp.15-20
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    • 2019
  • Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).

A Study on Attractive Force Characteristics of Glass Substrate Using Alumina Electrostatic Chuck by Finite Element Analysis (유한요소해석을 이용한 알루미나 정전척의 글라스 기판 흡착 특성 연구)

  • Lee, Jae Young;Jang, Kyung Min;Min, Dong Kyun;Kang, Jae Gyu;Sung, Gi Hyun;Kim, Hye Dong
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.4
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    • pp.46-50
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    • 2020
  • In this research, the attractive force of Coulomb type electrostatic chuck(ESC), which consisted of alumina dielectric, on glass substrate was studied by using the finite element analysis. The attractive force is caused by the high electrical resistance which occurs in contact region between glass substrate and dielectric layer. This research tries the simple geometrical modeling of ESC and glass substrate with air gap. The influences of the applied voltage, and air gap are investigated. When alumina dielectric with 1014 Ω·cm, 1.5 kV voltage, and 0.01 mm air gap were applied, electrostatic force in this work reached to 4 gf/㎠. This results show that the modeling of air gap is essential to derive the attractive force of the ESC.