• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.23-31
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• 2008

Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.52-58
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• 2006

Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.4
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• pp.372-380
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• 2004

This paper proposes a single-power-stage high frequency resonant AC-DC converter with high power factor using ZVS(Zero Voltage Switching), and integrates a conventional converter with two stage into single stage converter. Input power factor is possible to be improved as a high power factor because inductor for power factor correction(PFC) is connected in input and converter is operated in discontinued current mode(DCM) with constant duty cycle and variable switching frequency. The conventional converter with two stage need to add a switch in order to control a power factor, but single stage converter have a advantage that system is simple and cost is down, confidence is improved, etc. This paper described a operation principle and characteristic analysis for single stage AC-DC converter with high power factor and have evaluated characteristic values by using normalized parameter. We make a experimental equipment using MOSFET as a switching device on the basis of characteristic values obtained from characteristic evaluations and we conform a rightfulness of theoretical analysis by comparing theoretical waveforms and experimental waveforms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.300-305
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• 2000

We have investigated the dielectric and electrical characteristics of palmitic acid(PA) stearic acid(SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one(methylene group or alkyl chain length). The fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio the UV absorption and the capacitance. The dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about 3.0~4.6, 2.7~3.0 and 2.4~3.0 respectively. That is the relative dielectric constants were decreased in proportion to the chain length of methylene group. Also the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of 10$^4$~10$^{5}$ ［Hz］. The conductivity of PA, SA and AA LB films obtained from I-V characteristics were about 9$\times$10$^{-14}$ , 3$\times$10$^{-14}$ and 5$\times$10$^{-15}$ ［S/cm］. respectively. These results have shown the insulating materials and could control the conductivity y changing the length of methylene group. Also we have confirmed that the barrier height of fatty acid systems were almost the same ones obtained from dielectric characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.1-2
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• 2000

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.

• Clean Technology
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• v.16 no.4
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• pp.297-303
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• 2010

Effect of interconnect structure on the cell performance in anode-supported tubular solid oxide fuel cell (SOFC) has been investigated in this study, employing the Fluent CFD solver. For the robust and reliable theoretical analysis corroborating experimental results, it is of great importance to elucidate the role of interconnect which is electrically connected with electrodes on the cell characteristics. From the fact that the thin interconnect provides the enhanced cell performance, it is revealed that the interconnect thickness is a key parameter that is able to effectively control the ohmic resistance. Under the constant thickness condition, the cell performance does not considerably change with the variation of interconnect width. This is because the current passage along with circumferential direction is not effectively altered by the change of interconnect width in tubular SOFC system.

• Structural Engineering and Mechanics
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• v.90 no.4
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• pp.371-390
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• 2024

Investigating the impact of openings on the structural behavior of ferrocement I-beams with two distinct types of reinforcing metallic and non-metallic meshes is the primary goal of the current study. Up until failure, eight 250x200x2200 mm reinforced concrete I-beams were tested under flexural loadings. Depending on the kind of meshes used for reinforcement, the beams are split into two series. A control I-beam with no openings and three beams with one, two, and three openings, respectively, are found in each series. The two series are reinforced with three layers of welded steel meshes and two layers of tensar meshes, respectively, in order to maintain a constant reinforcement ratio. Structural parameters of investigated beams, including first crack, ultimate load, deflection, ductility index, energy absorption, strain characteristics, crack pattern, and failure mode were reported. The number of mesh layers, the volume fraction of reinforcement, and the kind of reinforcing materials are the primary factors that vary. This article presents the outcomes of a study that examined the experimental and numerical performance of ferrocement reinforced concrete I-beams with and without openings reinforced with welded steel mesh and tensar mesh separately. Utilizing ANSYS-16.0 software, nonlinear finite element analysis (NLFEA) was applied to illustrate how composite RC I-beams with openings behaved. In addition, a parametric study is conducted to explore the variables that can most significantly impact the mechanical behavior of the proposed model, such as the number of openings. The FE simulations produced an acceptable degree of experimental value estimation, as demonstrated by the obtained experimental and numerical results. It is also noteworthy to demonstrate that the strength gained by specimens without openings reinforced with tensar meshes was, on average, 22% less than that of specimens reinforced with welded steel meshes. For specimens with openings, this value is become on average 10%.

• The Korean Journal of Physiology and Pharmacology
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• v.26 no.5
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• pp.313-323
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• 2022

Atrial fibrillation (AF) is the most common supraventricular arrhythmia, and it corresponds highly with exercise intensity. Here, we induced AF in mice using acetylcholine (ACh)-CaCl₂ for 7 days and aimed to determine the appropriate exercise intensity (no, low, moderate, high) to protect against AF by running the mice at different intensities for 4 weeks before the AF induction by ACh-CaCl₂. We examined the AF-induced atrial remodeling using electrocardiogram, patch-clamp, and immunohistochemistry. After the AF induction, heart rate, % increase of heart rate, and heart weight/body weight ratio were significantly higher in all the four AF groups than in the normal control; highest in the high-ex AF and lowest in the low-ex (lower than the no-ex AF), which indicates that low-ex treated the AF. Consistent with these changes, G protein-gated inwardly rectifying K⁺ currents, which were induced by ACh, increased in an exercise intensity-dependent manner and were lower in the low-ex AF than the no-ex AF. The peak level of Ca²⁺ current (at 0 mV) increased also in an exercise intensity-dependent manner and the inactivation time constants were shorter in all AF groups except for the low-ex AF group, in which the time constant was similar to that of the control. Finally, action potential duration was shorter in all the four AF groups than in the normal control; shortest in the high-ex AF and longest in the low-ex AF. Taken together, we conclude that low-intensity exercise protects the heart from AF, whereas high-intensity exercise might exacerbate AF.

• Journal of the Korean Society of Marine Environment & Safety
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• v.29 no.6
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• pp.666-671
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• 2023

As international environmental regulations on ship emissions are gradually strengthened, interest in electric propulsion and hybrid propulsion ships is increasing, and various solutions are being developed and applied to these ships, especially stabilization of the power system and system efficiency. The direct current distribution system is being applied as a way to increase the power. In addition, verification and testing of safety and performance of marine DC distribution systems is required. As a result of establishing a DC distribution test bed, verifying the performance of the DC distribution (variable speed power generation) system, and analyzing fuel consumption, this study applied a variable speed power generation system that is applied to DC power distribution for ships, and converted the power output from the generator into a rectifier. A system was developed to convert direct current power to connect to the system and monitor and control these devices. Through tests using this DC distribution system, the maximum voltage was 751.5V and the minimum voltage was 731.4V, and the voltage fluctuation rate was 2.7%, confirming that the voltage is stably supplied within 3%, and a variable speed power generation system was installed according to load fluctuations. When applied, it was confirmed through testing that fuel consumption could be reduced by more than 20% depending on the section compared to the existing constant speed power generation system.