• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.9
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• pp.882-888
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• 2002

This paper proposed a bias stability circuit that compensates the degradation of MMIC's performance for the variation of the process and temperature. The proposed bias circuit proved the superior effect compared with the conventional bias circuit using the constant current source. It designed and fabricated simultaneously two amplifier on one layout for comparison in same conditions. One is amplifier with conventional bias circuit using constant current source and the other is amplifier with proposed bias stability circuit. The chip was measured the microwave performances under process variation that classed the level NOM, MIN and MAX. The amplifier with a conventional bias circuit using constant current source has 6.4 dB gain variation and 7 mA Ids variation at 1.8 GHz, but the amplifier with the proposed bias circuit has the 2.1 dB gain variation and 3 mA Ids variation. As the result, MMIC having the proposed bias circuit shows the superior compensation of the quiescent point than the MMIC having the conventional bias circuit under the variations of the process and temperature and can improve the yield of the MMIC. The fabricated chip size is 1.2 mm $\times$ 1.4 mm.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.6
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• pp.1-4
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• 1975

This paper dells with the impedance variations of the IMPATT diode depending upon the small a.c. coomponent superimposed on the d.c. bias. The frequency deviation of the modulated wave is measured using a carrier null method on microwave spectrum analyser. Frequency modulation is achieved by the weack a.c. signal superimposed on the d.c. bias. The bandwidth rapidly increase with increasing modulation signal magnitude for constant modulation frquency and slightly decrease with decreasing modulation frequency for constant modulation signal magnitude.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.127.6-127
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• 2001

In this paper, we deal with two bias compensation algorithms of acceleration sensor for measuring the galloping on power transmission line. Firstly, the block diagram of galloping measurement system is given and a galloping model is presented. Secondly, two compensation algorithms, a simple compensation and a period compensation, are proposed. A simple compensation algorithm use the drafts of velocity and distance at fixed periods, so it is useful for constant bias case. Next, a period compensation algorithm can compensate a periodic bias. This algorithm use the previous measured data and compensated data for constant period, where the period is obtained by FFT method. Lastly, the effectiveness of proposed algorithms is verified by comparing between two algorithms in simulation, and its characteristics and the bias error bound are shown, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.883-890
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• 2005

In this paper, the established model of NBTI (Negative Bias Temperature Instability) mechanism was reviewed. Based on this mechanism, then, the influence of nitrogen was discussed among other processes. A constant concentration of nitrogen exists inside $SiO_2$ in order to prevent boron from diffusing and to increase dielectric constant. It was shown that NBTI improvement was achieved by controlling nitrogen profile. It was supposed that the existence of low activation energy of Si-N bonds at $Si-SiO_2$ interface attributes the improvement by making hydrogen prevent interface traps. It was also shown that improvement of NBTI can be achieved by more effective control of nitrogen profile. It was supposed that the maximum control of nitrogen profile can be achieved by DPN (Decoupled Plasma Nitridation) process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.706-710
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• 2008

The substrate bias effect on the current level of SOI-MOSFETs for high temperature operation has been investigated. In this work, we demonstrate the current level of SOI-MOSFETs can be controlled at different temperatures by applying a control bias to the substrate, showing that all current levels below T=150$^{\circ}C$ can be adjusted to a constant current level. 2D numerical simulation results show that substrate bias effectively controls the current conduction; as the substrate bias effectively lower the potential of the channel, inversion carrier generation is effectively controlled and consequently a constant current conduction level is achieved up to T=150$^{\circ}C$. We also demonstrate that the device simulated in this work has same operation at any temperature below T=150$^{\circ}C$ through mixed mode simulation.

• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.171-177
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• 2001

The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

• Communications for Statistical Applications and Methods
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• v.13 no.2
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• pp.379-387
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• 2006

Local polynomial regression is widely used because of good properties such as such as the adaptation to various types of designs, the absence of boundary effects and minimax efficiency Choi and Hall (1998) proposed an estimator of regression function using a convex combination idea. They showed that a convex combination of three local linear estimators produces an estimator which has the same order of bias as a local cubic smoother. In this paper we suggest another estimator of regression function based on a convex combination of five local constant estimates. It turned out that this estimator has the same order of bias as a local cubic smoother.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.151-155
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• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.128-136
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• 2001

This paper evaluates the performance of an optic link in a frequency conversion based fiber-radio system. The proposed link structure simplifies a BS(base station) via making the MMW(millimeter wave) optical pilot tone generated in the CS(control station) be used in the uplink as well as in the downlink. To acquire the optical pilot tone, an EOM(electro-optic modulator) in the CS is biased in three different ways, i.e., MAB(maximum bias), MIB(minimum bias), QB(quadrature bias). We, depending on the biasing of the EOM, evaluate the link performances in two cases; one is for constant laser source power and the other for constant received DC optical power at a PD(photo detector). Based on the simulation results on the downlink CNR and the uplink SFDR(spurious free dynamic range), we finally deduce the effective EOM biasing for each case.