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http://dx.doi.org/10.4313/JKEM.2008.21.8.706

A Study on High Temperature Operation of SOI-MOSFET  

Choi, Chang-Yong (광운대학교 전자재료공학과)
Moon, Kyung-Sook (경원대학교 수학정보학과)
Koo, Sang-Mo (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.8, 2008 , pp. 706-710 More about this Journal
Abstract
The substrate bias effect on the current level of SOI-MOSFETs for high temperature operation has been investigated. In this work, we demonstrate the current level of SOI-MOSFETs can be controlled at different temperatures by applying a control bias to the substrate, showing that all current levels below T=150$^{\circ}C$ can be adjusted to a constant current level. 2D numerical simulation results show that substrate bias effectively controls the current conduction; as the substrate bias effectively lower the potential of the channel, inversion carrier generation is effectively controlled and consequently a constant current conduction level is achieved up to T=150$^{\circ}C$. We also demonstrate that the device simulated in this work has same operation at any temperature below T=150$^{\circ}C$ through mixed mode simulation.
Keywords
High temperature; SOI-MOSFET; Simulation;
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