• Journal of the Korean Society for Precision Engineering
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• v.26 no.1
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• pp.105-111
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• 2009

Dielectric breakdown in piezoelectric ceramics is analyzed by using the three dimensional J integral. The J integral is shown to be a path-independent surface integral for a conductive tubular channel in a piezoelectric material. J integrals are also numerically calculated for conductive defects and tubular channels in piezoelectric ceramics through finite element analysis.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.467-468
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• 2009

• Advances in nano research
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• v.3 no.1
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• pp.49-54
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• 2015

The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.384-385
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• 2006

We studied about conductive pastes of the source-drain contacts for OTFTs(organic thin-film transistors) fabricated by direct printing(screen printing) method. We used Ag and conductive carbon black powder as the conductive fillers of pastes. The conductive pastes were manufactured by various dispersing agents and dispersing conditions and source-drain contacts with $100{\mu}m$ of channel length were fabricated. We could obtain the OTFTs which exhibited different field-effect behaviors over a range of source-dram and gate voltages depending on a kind of conductive fillers used conductive pastes.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.471-476
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• 2001

The characteristics of conjugated heat transfer in the inclined channel was experimentally investigated. The simulated module is attached to the bottom of the inclined channel and is heated with constant heat flux. The experimental parameters of this study are input power (Q = 3, 7W), inlet air velocity ($V_{i}=0.1{\sim}0.9m/s$) and inclined channel angle (${\varphi}=0{\sim}90^{\circ}$). The results show that input power was most effective parameter on the temperature differences between module and air. As the inclined channel angle increases, the temperatures of the module are increased. And we obtained the best condition on the conductive board when ${\varphi}=0^{\circ}$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.559-560
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.565-566
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.591-592
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• 2006

We studied about the manufacture of the drain-source contacts for OTFTs(organic thin-film transistors) by using screen printing method. The conductive fillers used Ag and carbon black. The conductive contacts with $100{\mu}m$ of channel length were screen printed on a silicon dioxide gate dielectric layer and, the pentacene semiconductor was deposited via vacuum deposition. As a result of studying various conductive pastes, we could obtain the OTFTs which exhibited field-effect behavior over arrange of drain-source and gate voltages, similar to devices employing deposited Au contacts. By using screen-printing with conductive paste, the contacts are processed at low temperature, thereby facilitating their integration with heat sensitive substrates.

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.54-58
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• 2021

The RGO with controllable oxygen functional groups is a novel material as the active layer of resistive switching memory through a reduction process. We designed a nanoscale conductive channel induced by local oxygen ion diffusion in an Au / RGO+GQD / Al resistive switching memory structure. A strong electric field was locally generated around the Al metal channel generated in BIL, and the local formation of a direct conductive low-dimensional channel in the complex RGO graphene quantum dot region was confirmed. The resistive memory design of the complex RGO graphene quantum dot structure can be applied as an effective structure for charge transport, and it has been shown that the resistive switching mechanism based on the movement of oxygen and metal ions is a fundamental alternative to understanding and application of next-generation intelligent semiconductor systems.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.12
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• pp.620-625
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• 2004

In this paper, we studied the emissive electric field due to the communication signal and the noise in medium voltage power-line. There are many types of conductive noise in power-line channel, which gives rise to radiation. And if the DMT carrier signal was excited, the current by this term was added to the current by noise and, generate radiation. We calculated input impedance by means of signal input network model of medium voltage power-line channel for calculating these currents. We calculated currents by input impedance and, calculated the emissive electric field by this calculated currents. From the measurement results, we knew that the measured results are very similar to the calculated results and if the input signal power level was higher than -40 dBm, the emissive electric field exceeds FCC radiation limit level 69.5 dB$\mu$V/m.