• 한국세라믹학회지
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• 제53권3호
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• pp.301-305
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• 2016

We investigate proton conduction in a nonstoichiometric ${\Sigma}3$ $BaZrO_3$ (210)[001] tilt grain boundary using density functional theory (DFT). We employ the space charge layer (SCL) and structural disorder (SD) models with the introduction of protons and oxygen vacancies into the system. The segregation energies of proton and oxygen vacancy are determined as -0.70 and -0.54 eV, respectively. Based on this data, we obtain a Schottky barrier height of 0.52 V and defect concentrations at 600K, in agreement with the reported experimental values. We calculate the energy barrier for proton migration across the grain boundary core as 0.61 eV, from which we derive proton mobility. We also obtain the proton conductivity from the knowledge of proton concentration and mobility. We find that the calculated conductivity of the nonstoichiometric grain boundary is similar to those of the stoichiometric ones in the literature.

• 한국세라믹학회지
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• 제53권5호
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• pp.521-528
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• 2016

Kinetic Monte Carlo (KMC) and graph searches show that proton conduction limiting barriers and trajectories in $BaZr_{0.875}Y_{0.125}O_3$ are affected by the presence of other protons. At 1000 K, KMC limiting conduction barriers increase from 0.39 eV to 0.45 eV as the proton number is increased. The proton-proton radial distribution begins to rise at $2{\AA}$ and peaks at $4{\AA}$, which is half the distance expected, based on the proton concentration. Density functional theory (DFT) calculations find proton/proton distances of 2.60 and $2.16{\AA}$ in the lowest energy two-proton configurations. A simple average of the limiting barriers for 7-10 step periodic long range paths found via graph theory at 1100 K shows an increase in activation barrier from 0.32 eV to 0.37 eV when a proton is added. Both KMC and graph theory show that protons can affect each other's pathways and raise the overall conduction barriers.

• Bulletin of the Korean Chemical Society
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• 제34권7호
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• pp.2093-2098
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• 2013

Density functional theory (DFT) was used to determine the ground state geometries of indigo and new design dyes (IM-Dye-1 IM-Dye-2 and IM-Dye-3). The time dependant density functional theory (TDDFT) was used to calculate the excitation energies. All the calculations were performed in both gas and solvent phase. The LUMO energies of all the dyes were above the conduction band of $TiO_2$, while the HOMOs were below the redox couple (except IM-Dye-3). The HOMO-LUMO energy gaps of new design dyes were smaller as compared to indigo. All new design dyes were strongly red shifted as compared to indigo. The improved light harvesting efficiency (LHE) and free energy change of electron injection ${\Delta}G^{inject}$ of new designed sensitizers revealed that these materials would be excellent sensitizers. The broken coplanarity between the benzene near anchoring group having LUMO and the last benzene attached to TPA unit in all new design dyes consequently would hamper the recombination reaction. This theoretical designing will the pave way for experimentalists to synthesize the efficient sensitizers for solar cells.

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3211-3217
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• 2013

Density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations have been employed to investigate the molecular structures and absorption spectra of three D-${\pi}$-A-type organic dyes (C1-1, D5 and TH208) containing identical ${\pi}$-spacers and electron acceptors, but different aromatic amine electron-donating groups (tetrahydroquinoline, triphenylamine and phenothiazine). The coplanar geometries indicate that the strong conjugation is formed in the dyes. The electronic structures suggest that the intramolecular charge transfer from the donor to the acceptor occurs, and the electron-donating ability of tetrahydroquinoline is stronger than those of triphenylamine and phenothiazine. The computed orbital energy levels of these dyes confirm that the electrons could be injected from the excited dyes to the semiconductor conduction band and the oxidized dyes could be reduced effectively by electrolyte. The TD-DFT results show that the CAM-B3LYP/6-31+G(d, p) is suitable for calculating the absorption spectra. The first absorption band for these dyes is assigned to the HOMO${\rightarrow}$LUMO and HOMO-1${\rightarrow}$LUMO transitions.

• 전기화학회지
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• 제13권4호
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• pp.290-294
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• 2010

본 연구는 밀도 범함수 이론을 이용하여 Li이온전지에 사용되는 Li코발트 산화물에서의 Li이온 삽입 전압과 전도에 관한 것이다. Li이온은 Li코발트 산화물 원자구조의 각 층을 1개씩 채우거나 한 층을 다 채우고 다음 층을 채울 수 있다. 평균 삽입 전압은 3.48V로 동일하나, 전자가 후자보다 더 유리하였다. 격자상수 c는 Li농도가 0.25보다 작을 때는 증가하였으나, 0.25보다 클 때는 감소하였다. Li농도가 증가하면, Li코발트 산화물에서의 Li이온 전도를 위한 에너지 장벽은 증가하였다. Li이온전지가 방전 중 출력 전압이 낮아지는 현상은 Li농도 증가에 따른 삽입 전압의 감소와 전도 에너지 장벽의 증가로 설명할 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제31권9호
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• pp.2531-2536
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• 2010

Density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations have been employed to investigate the molecular structures and absorption spectra of two dyes containing diphenylaniline and 4-diphenylamino-diphenylaniline as donor moiety (TPA1 and TPA3). The geometries indicate that the strong conjugation is formed in the dyes. The electronic structures suggest that the intramolecular charge transfer from the donor to the acceptor occurs, and the electron-donating capability of 4-diphenylamino-diphenylaniline is stronger than that of diphenylaniline. The computed highest occupied molecular orbital (HOMO) energy levels are -5.31 and -4.90 eV, while the lowest unoccupied molecular orbital (LUMO) energies are -2.29 and -2.26 eV for TPA1 and TPA3, respectively, revealing that the interfacial charge transfer between the dyes and the semiconductor electrode are electron injection processes from the photon-excited dyes to the semiconductor conduction band. Furthermore, all the experimental absorption bands of TPA1 and TPA3 have been assigned according to the TDDFT calculations.

• 대한환경공학회지
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• 제38권5호
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• pp.242-248
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• 2016

연료전지에서의 전체 반응 속도는 산화전극에서 일어나는 수소산화반응에 비해 그 반응 속도가 현저히 느린 환원전극에서의 산소환원반응(oxygen reduction reaction, ORR)에 의해 결정된다. ORR 효율성 평가를 용이하게 하는 지표(descriptor)로서 촉매 표면에서의 산소원자 흡착강도를 활용하는데, 산소흡착강도는 촉매 표면의 기하학적 구조 변형에 따른 전자구조를 변형함으로써 조절할 수 있다. 이에 본 연구에서는 백금 표면의 원자모델을 이용하여 표면의 기하학적 구조가 산소흡착강도에 미치는 영향과 그 원인을 밀도범함수이론(density functional theory, DFT) 계산을 통해 분석하였다. 먼저, 기하학적 구조를 인위적으로 변형시킨 Pt(111) 표면에서의 산소흡착반응을 밀도범함수이론 계산을 이용해 분석함으로써 기하학적 구조변화가 산소흡착강도에 미치는 영향(strain effect)을 확인하였다. 최적화한 Pt 격자상수($3.977{\AA}$)에 ${\pm}1%$ 간격의 변화율을 적용하고 각 변화율마다의 산소흡착강도를 계산하였는데, Pt-Pt 원자 간 거리가 멀어질수록 산소흡착강도가 강해지는 것을 확인하였다. 이는 원자 간 거리가 증가할수록 d-band center가 페르미 준위(Fermi level)쪽으로 이동하게 되며, 이로써 일부 반결합 오비탈(anti-bonding orbitals)에 전자가 채워지지 않기 때문에 전체적으로 반결합 오비탈이 형성될 가능성이 적어지기 때문이다. 결과적으로, 순수한 백금이 가진 격자상수($3.9771{\AA}$) 보다 약 2~4% 작은 백금 표면 격자크기를 가질 수 있도록 유도할 수 있다면 산소흡착강도가 적절히 약하게 조절될 수 있으며, 이는 순수한 백금보다 더 향상된 ORR 성능을 가진 촉매물질 개발 연구를 위한 기초자료로서 활용할 수 있을 것이다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.399-402
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• 2019

The electromagnetic properties of heavy fermion $CePd_2Si_2$ are investigated using density functional theory using the local density approximation (LDA) and LDA+U methods. The Ce f-bands are located near the Fermi energy and hybridized with the Pd-3d states. This hybridization plays an important role in generating the physical characteristics of this compound. The magnetic moment of $CePd_2Si_2$ calculated within the LDA scheme does not match with the experimental result because of the strong correlation interaction between the f orbitals. The calculation shows that the specific heat coefficient underestimates the experimental value by a factor of 5.98. This discrepancy is attributed to the formation of quasiparticles. The exchange interaction between the local f electrons and the conduction d electrons is the reason for the formation of quasiparticles. The exchange interaction is significant in $CePd_2Si_2$, which makes the quasiparticle mass increase. This enhances the specific heat coefficient.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.180.2-180.2
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• 2014

Opening a bandgap by forming graphene nanoribbons (GNRs) and tailoring their properties via doping is a promising direction to achieve graphene-based advanced electronic devices. Applying a first-principles computational approach combining density functional theory (DFT) and DFT-based non-equilibrium Green's function (NEGF) calculation, we herein study the structural, electronic, and charge transport properties of boron-nitrogen binary edge doped GNRs and show that it can achieve novel doping effects that are absent for the single B or N doping. For the armchair GNRs, we find that the B-N edge co-doping almost perfectly recovers the conductance of pristine GNRs. For the zigzag GNRs, it is found to support spatially and energetically spin-polarized currents in the absence of magnetic electrodes or external gate fields: The spin-up (spin-down) currents along the B-N undoped edge and in the valence (conduction) band edge region. This may lead to a novel scheme of graphene band engineering and benefit the design of graphene-based spintronic devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.310-310
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• 2010

Electronic and photovoltaic characteristics of two sensitizers (TA-BTD-CA and TA-BTD-St-CA), composed of a different $\pi$-conjugation in the linker group, have been investigated by theoretical and experimental methods. The electronic structure, transition dipole moment and oscillator strengths of two sensitizers have been scrutinized by using density functional theory (DFT) and time-dependent DFT (TD-DFT) method. The LUMO level and the oscillator strength of TA-BTD-St-CA was higher than that of TA-BTD-CA, which may facilitate the electron injection process as well as increase the absorption coefficient. The relative efficiencies of the electron injection from the excited sensitizer to nanocrystalline TiO2 and SnO2 films have also been investigated by nanosecond transient absorption spectroscopy. The relative electron injection efficiency of TA-BTD-St-CA exhibited similar injection efficiency for two different semiconductors. However, in the case of TA-BTD-CA sensitizer, electron injection into SnO2 was approximately three times larger than that into TiO2. This enhancement of electron injection of TA-BTD-CA for the SnO2 is due to the increment of the driving force caused by positive shift of conduction band of semiconductor, which was also confirmed from the investigation for the photovoltaic characteristics according to the electrolyte additive, such as LiI additive.