• Title/Summary/Keyword: Complex resistivity

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The Power Loss Characteristics of Mn-Zn Ferrites at MHz Region with Sintering Condition (소성조건에 따른 MHz 대역의 Mn-Zn ferrite 전력손실 특성)

  • Suh J.J.;Song B.M
    • Resources Recycling
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    • v.12 no.6
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    • pp.26-31
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    • 2003
  • The power loss characteristics of Mn-Zn ferrite were observed with the sintering temperature. In case of $1150 ^{\circ}C$ sintering, the core loss increased with measuring temperature, and does not have minimum value at the point where the magnetocrystalline anisotropy be 'zero'. This reason mainly due to the change of core loss mechanism with grain size which affects residual loss. The grain size and sintered density slightly increased with equilibrium oxygen partial pressure at$ 1150 ^{\circ}C$ sintering. The resistivity and initial permeability showed no significance with atmosphere, these results due to complex effect of $Fe^{2+}$ concentration and microstructure change. The core loss at $100^{\circ}C$ decreased as the equilibrium oxygen partial pressure increased.e increased.

Effects of ZnO Composition on the Thermal Emission Properties for LTCC Type of High Power LED Package (고전력 LED용 적층형 LTCC 패키징의 ZnO 조성 변화가 방열 특성에 미치는 영향)

  • Kim, Woojeong;Kim, Hyung Soo;Shin, Daegyu;Lee, Hee Chul
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.4
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    • pp.79-83
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    • 2012
  • LTCC (Low temperature co-fired ceramic) package have been paid much attention due its good reliability, miniaturization, and application of silver paste with complex wiring and printing. Therefore, LTCC package has been expected to replace vulnerable plastic package in the field of high power LED device. Currently, LTCC ceramic package is mainly made up of aluminum oxide powder. In this study, zinc oxide powder is added or replaced for the fabrication of LTCC ceramic body. By adding small amount of ZnO, thermal conductivity of the LTCC ceramic body could be remarkably increased by 25% leading to the extension of LED life time. The LTCC package structure with composition including ZnO has an increased thermal flux by 56% as a result of ANSYS simulation. Actually, the fabricated LED package with the addition of ZnO exhibits a decreased thermal resistivity by 14.9%.

The Magnetic Properties of FeBSiNb Alloy Ribbons with High Glass forming Ability (고 비정질 형성능을 가진 FeBSiNb 합금 리본의 자기적 특성)

  • Noh, Tae-Hwan;Kim, Gu-Hyun
    • Journal of the Korean Magnetics Society
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    • v.12 no.4
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    • pp.154-159
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    • 2002
  • Amorphous FeBSiNb alloy ribbons having bulk glass forming ability and high saturation magnetic flux density were produced by single-roller melt spinning apparatus in the thickness range of 22∼102㎛. With the increase of thickness, the coercive force and squareness ratio decreased, while maximum permeability and AC permeability increased. However electrical resistivity was almost constant. Furthermore refined and complex magnetic domain structure was observed in thicker ribbons owing to the change in internal magnetic anisotropy. For the alloy with the thickness of 81㎛, small coercive force of 24 mOe and high effective permeability of 12,000 at 1㎑ were obtained, those are considered to be better comparing to the conventional soft magnetic amorphous alloys (∼20 ㎛). The good soft magnetic properties of the thick FeBSiNb amorphous alloys were attributed to the decrease in surface pinning effect during wall motion, appearance of perpendicular anisotropy and resulted domain refinement.

Highly Conformal Deposition of Pure Co Films by MOCVD Using Co2(CO)8 as a Precursor (Co2(CO)8 (Dicobalt Octacarbonyl) 전구체를 이용한 MOCVD Co 박막의 균일한 증착 특성 및 높은 순도에 관한 연구)

  • Lee, Jeong-Gil;Lee, Jae-Gab
    • Korean Journal of Materials Research
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    • v.16 no.2
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    • pp.106-110
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    • 2006
  • We have investigated the effect of the experimental variables such as temperature and pressure on conformality of Co films deposited over high aspect ratio trenches using $Co_2(CO)_8$ as a precursor. The results show that the conformality of Co films is a strong function of temperature and process pressure. Lowering the pressure and temperature significantly improves the conformality. As the pressure decreases from 0.6 Torr to 0.2 Torr at $50^{\circ}C$, the bottom coverage of Co films over $0.2{\mu}m$ width trenches with an aspect ratio of 13 to 1 significantly increases to 85%. However, further increasing the temperature from 50 to $60^{\circ}C$ at the pressure of 0.2 Torr degrades the bottom coverage to 14%. In contrast, the extremely low pressure of 0.03 Torr allows the excellent conformal deposition of Co films up to $70^{\circ}C$. This can be attributed to the suppression of homogeneous reaction in the gas phase, which can create the intermediate products with high sticking coefficient. In addition, the Co films deposited at $50^{\circ}C$ show the low resistivity with negligible contamination. As a result, the newly developed Co process using MOCVD can be implemented into the next generation devices with complex shapes.

Characterization of arsenic doped p-type ZnO thin film (As 토핑된 p형 ZnO 박막의 특성 분석)

  • Kim, Dong-Lim;Kim, Gun-Hee;Chang, Hyun-Woo;Ahn, Byung-Du;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.53-54
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    • 2006
  • Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

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A Study on the Interface and Luminescent Properties of OLED using $Al_2Nq_4$ as an Emitting Layer ($Al_2Nq_4$를 발광층으로 이용한 OLED의 계면 및 발광 특성에 관한 연구)

  • Yang, Ki-Sung;Lee, Ho-Sik;Shin, Hoon-Kyu;Kim, Doo-Seok;Kim, Chung-Kyun;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.215-219
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    • 2004
  • Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.

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Ag Nanoparticle Self-Generation and Agglomeration via Laser-Induced Plasmonic Annealing for Metal Mesh-Based Transparent Wearable Heater (레이저 기반 플라즈모닉 어닐링을 통한 은 나노입자 자가 생성 및 소결 공정과 이를 활용한 메탈메쉬 전극 기반 투명 웨어러블 히터)

  • Hwang, Yun Sik;Nam, Ui Yeon;Kim, Yeon Uk;Woo, Yu Mi;Heo, Jae Chan;Park, Jung Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.5
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    • pp.439-444
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    • 2022
  • Laser-induced plasmonic sintering of metal nanoparticles (NPs) is a promising technology to fabricate flexible conducting electrodes, since it provides instantaneous, simple, and scalable manufacturing strategies without requiring costly facilities and complex processes. However, the metal NPs are quite expensive because complicated synthesis procedures are needed to achieve long-term reliability with regard to chemical deterioration and NP aggregation. Herein, we report laser-induced Ag NP self-generation and sequential sintering process based on low-cost Ag organometallic material for demonstrating high-quality microelectrodes. Upon the irradiation of laser with 532 nm wavelength, pre-baked Ag organometallic film coated on a transparent polyimide substrate was transformed into a high-performance Ag conductor (resistivity of 2.2 × 10-4 Ω·cm). To verify the practical usefulness of the technology, we successfully demonstrated a wearable transparent heater by using Ag-mesh transparent electrodes, which exhibited a high transmittance of 80% and low sheet resistance of 7 Ω/square.

Review on the Three-Dimensional Magnetotelluric Modeling (MT 법의 3차원 모델링 개관)

  • Kim, Hee-Joon;Nam, Myung-Jin;Song, Yoon-Ho;Suh, Jung-Hee
    • Geophysics and Geophysical Exploration
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    • v.7 no.2
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    • pp.148-154
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    • 2004
  • This article reviews the development of three-dimensional (3-D) magnetotelluric (MT) modeling. The 3-D modeling of electromagnetic fields is essential in understanding the physics of MT soundings, and in implementing an inversion method to reconstruct a 3-D resistivity image. Although various numerical schemes have been developed over the last two decades, practical methods have been quite limited. However, the recent rapid improvement in computer speed and memory, as well as the advance in iterative solution algorithms for a large system of equations, makes it possible to model the MT responses of complex 3-D structures, which have been very difficult to simulate before. The use of staggered grids in finite difference method has become popular, conserving a magnetic flux and an electric current and allowing for realistic discontinuous fields. The convergence of numerical solutions has been greatly accelerated by adopting Krylov subspace methods, proper preconditioning techniques, and static divergence corrections. The vector finite-element method using edge elements is also free from the discontinuity problem, and seems a natural choice for modeling complex structures including irregular topography because its flexibility allows one to capture full geometric complexity.

Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors (고감도 적외선 이미지 센서 적용을 위한 금속-유전체 복합 박막의 광전자 특성)

  • Kim, Ye-Na;Kwon, Soon-Woo;Park, Seung-Jun;Kim, Woo-Kyug;Lee, Han-Young;Yoon, Dae-Ho;Yang, Woo-Seok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.2
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    • pp.60-64
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    • 2011
  • High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.

Effect of PVP(polyvinylpyrrolidone) on the Ag Nano Ink Property for Reverse Offset Printing (PVP(polyvinylpyrrolidone)가 리버스 오프셋용 은 나노 잉크 물성에 미치는 영향)

  • Han, Hyun-Suk;Kwak, Sun-Woo;Kim, Bong-Min;Lee, Taik-Min;Kim, Sang-Ho;Kim, In-Young
    • Korean Journal of Materials Research
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    • v.22 no.9
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    • pp.476-481
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    • 2012
  • Among the various roll-to-roll printing technologies such as gravure, gravure-offset, and reverse offset printing, reverse offset printing has the advantage of fine patterning, with less than 5 ${\mu}m$ line width. However, it involves complex processes, consisting of 1) the coating process, 2) the off process, 3) the patterning process, and 4) the set process of the ink. Each process demands various ink properties, including viscosity, surface tension, stickiness, and adhesion with substrate or clich$\acute{e}$; these properties are critical factors for the printing quality of fine patterning. In this study, Ag nano ink was developed for reverse offset printing and the effect of polyvinylpyrrolidone(PVP), used as a capping agent of Ag nano particles, on the printing quality was investigated. Ag nano particles with a diameter of ~60 nm were synthesized using the conventional polyol synthesis process. Ethanol and ethylene glycol monopropyl ether(EGPE) were used together as the main solvent in order to control the drying and absorption of the solvents during the printing process. The rheological behavior, especially ink adhesion and stickiness, was controlled with washing processes that have an effect on the offset process and that played a critical role in the fine patterning. The electrical and thermal behaviors were analyzed according to the content of PVP in the Ag ink. Finally, an Ag mesh pattern with a line width of 10 ${\mu}m$ was printed using reverse offset printing; this printing showed an electrical resistivity of 36 ${\mu}{\Omega}{\cdot}cm$ after sintering at $200^{\circ}C$.