Browse > Article
http://dx.doi.org/10.6111/JKCGCT.2011.21.2.060

Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors  

Kim, Ye-Na (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
Kwon, Soon-Woo (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
Park, Seung-Jun (Department of Materials Science and Engineering, Hanyang University)
Kim, Woo-Kyug (Korea Electronics Technology Institute)
Lee, Han-Young (Korea Electronics Technology Institute)
Yoon, Dae-Ho (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
Yang, Woo-Seok (Korea Electronics Technology Institute)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.21, no.2, 2011 , pp. 60-64 More about this Journal
Abstract
High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.
Keywords
$(SiO_2)_x-(Ti)_y$ films; TCR; Resistivity; Thermal evaporator; IR image sensor;
Citations & Related Records
연도 인용수 순위
  • Reference
1 K.C. Liddiard, M.H. Unewisse and O. Reinhold, "Design and fabrication of thin film monolithic uncooled infrared detector arrays", SPIE, 2225 (1994) 62.
2 E.V. Michailovskaya, I.Z. Indutnyy and P.E. Shepeliavyi, "Inhomogeneous SiOx metal-dielectric films as a material for infrared thermal radiation detectors", Technical Physics 48(2) (2003) 261.   DOI   ScienceOn
3 K. Haga and H. Watanabe, "A structural interpretation of Si---O---Si vibrational absorption of high-photoconductive amorphous a-SiO_x$ : H films", 195(1-2) (1996) 72.   DOI
4 J.D. Vinent, "Fundamentals of infrared detector operation and testing", Wiley (1990).
5 J.E. Morris, "Structure and electrical properties of Au- SiO thin film cermets", Thin Solid Films 11 (1972) 299.   DOI   ScienceOn
6 S.R. Hunter, G. Maurer, L. Jiang and G. Simelgor, "Highsensitivity uncooled microcantilever infrared imaging arrays", Proc. SPIE, 6206 (2006) 620 61J-1-620 61J-11.
7 D. Grbovic et al., "Uncooled infrared imaging using bimaterial microcantilever arrays", Appl Phys. Lett. 89 (2006) 073118.   DOI   ScienceOn
8 V. Yu. Zerov et al., "Features of the operation of a bolometer based on a vanadium dioxide film in a temperature interval that includes a phase transition", J. Opt. Technol. 66 (1999) 387.   DOI
9 C. Chen, X. Yi, J. Zhang and X. Zhao, "Linear uncooled microbolometer array based on $VO_x$ thin films", Infrared Phys. Technol. 42 (2001) 87.   DOI   ScienceOn
10 K.C. Liddiard, "Thin-film resistance bolometer IR detectors - II", Infrared Physics 26 (1986) 43.   DOI   ScienceOn
11 J.M. Lloyd, "Themal Imaging Systems", Plenum Press, New York (1975).
12 J.L. Miller, "Principles of Infrared Technology", Van Nostrum Reinhold, New York (1994).
13 R.S. Balcerak, "Uncooled IR imaging: technology for the next generation", Infrared Technol. Appl. XXV, SPIE 3698 (1999) 110.
14 P.G. Datskos, N.V. Lavrik and S. Rajic, "Performance of uncooled microcantilever thermal detectors", Rev. Sci. Instrum 75 (2004) 1134.   DOI   ScienceOn