• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.949-958
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• 2018

A voice recognition control system is a system for controlling a peripheral device by recognizing a voice. Recently, a voice recognition control system have been applied not only to smart devices but also to various environments ranging from IoT(: Internet of Things), robots, and vehicles. In such a voice recognition control system, the recognition rate is lowered due to the ambient noise in addition to the voice of the user. In this paper, we propose a dual channel acoustic beamforming hardware architecture for MEMS(: Microelectromechanical Systems) microphones to eliminate ambient noise in addition to user's voice. And the proposed hardware architecture is designed as ASIC(: Application-Specific Integrated Circuit) using TowerJazz $0.18{\mu}m$ CMOS(: Complementary Metal-Oxide Semiconductor) technology. The designed dual channel acoustic beamforming ASIC has a die size of $48mm^2$, and the directivity index of the user's voice were measured to be 4.233㏈.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.118-119
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• 2007

High performance three-dimensional (3-D) stacked poly-Si complementary metal-oxide semiconductor (CMOS) inverters with a high quality laser crystallized channel were fabricated. Low temperature crystallization methods of a-Si film using the excimer-laser annealing (ELA) and sequential lateral solidification (SLS) were performed. The NMOS thin-film-transistor (TFT) at lower layer of CMOS was fabricated on oxidized bulk Si substrate, and the PMOS TFT at upper layer of CMOS was fabricated on interlayer dielectric film. The 3-D stacked poly-Si CMOS inverter showed excellent electrical characteristics and was enough for the vertical integrated CMOS applications.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.236-242
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• 2021

In this paper, we report the fabrication of the tip-on-gate of a field-effect-transistor (ToGoFET) probe using a standard complementary metal-oxide-semiconductor (CMOS) process and the performance evaluation of the fabricated probe. After the CMOS process, I-V characteristic measurement was performed on the reference MOSFET. We confirmed that the ToGoFET probe could be operated at a gate voltage of 0 V due to channel ion implantation. The transconductance at the operating point (Vg = 0 V, Vd = 2 V) was 360 ㎂/V. After the fabrication process was completed, calibration was performed using a pure metal sample. For sensitivity calibration, the relationship between the input voltage of the sample and the output current of the probe was determined and the result was consistent with the measurement result of the reference MOSFET. An oxide sample measurement was performed as an example of an application of the new ToGoFET probe. According to the measurement, the ToGoFET probe could spatially resolve a hundred nanometers with a height of a few nanometers in both the topographic image and the ToGoFET image.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.1-5
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• 2022

In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.12-15
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• 2022

In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.7-10
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• 2010

In this paper, we design a modem SoC (System on Chip) for low power consumption and high speed wireless communications. Among various schemes of high speed communications, an MB-OFDM (Multi Band-Orthogonal Frequency Division Multiplexing) UWB (Ultra-Wide-Band) chip is designed. The MB-OFDM uses wide-band frequency to provide high speed data rate. Additionally, the system imposes no interference to other services. The 90nm CMOS (Complementary Metal-Oxide Semiconductor) technology is used for the SoC design. Especially, power management mode is implemented to reduce the power consumption.

• Journal of the Optical Society of Korea
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• v.15 no.1
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• pp.1-3
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• 2011

We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and $P^+$/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the $P^+$/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.8C
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• pp.806-813
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• 2009

This paper presents a modem chip design for high-speed wireless communications. Among the high-speed communication technologies, we design the UWB (Ultra-Wideband) modem SoC (System-on-Chip) Chip based on a MB-OFDM scheme which uses wide frequency band and gives low frequency interference to other communication services. The baseband system of the modem SoC chip is designed according to the standard document published by WiMedia. The SoC chip consists of FFT/IFFT (Fast Fourier Transform/Inverse Fast Fourier Transform), transmitter, receiver, symbol synchronizer, frequency offset estimator, Viterbi decoder, and other receiving parts. The chip is designed using 90nm CMOS (Complementary Metal-Oxide-Semiconductor) procedure. The chip size is about 5mm x 5mm and was fab-out in July 20th, 2009.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.462-469
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• 2008

In this paper, we design the FPGA (Field-Programmable Gate Array) of the KOINONIA WPAN (Wireless Personal Area Network), and implement the SoC (System on Chip). We use the redundant bits to make a constant-amplitude in a modulator part. Additionally, the SNR (Signal to Noise Ratio) performance of the demodulator is improved by using the redundant bits in decoding steps. The four-million FPGA of the KOINONIA WPAN can be operated at 44MHz frequency. The PER (Packet Error Rate) of the designed FPGA with RF (Radio Frequency) module is below 1% at the -86dB MIPLS (Minimum Input Power Level Sensitivity), and the SNR is about 13dB. The SoC is implemented by using Hynix 0.25um CMOS (Complementary Metal Oxide Semiconductor) process. The size of the SoC is $6.52mm{\times}6.92mm$.