• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.3
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• pp.445-450
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• 2017

In this paper, the directional coupler with half-power division is designed and fabricated by using the vertical coupling structure based on the CPW transmission-line. Even-mode and odd-mode of the vertical coupling structure can be analyzed by the conventional CPW-line and the CBCPW-line, respectively, with half thickness of the substrate. The directional coupler is designed by using the tefron substrate with the dielectric constant of 2.55 and the thickness of 0.76mm. Manufactured directional coupler has the center frequency of 2.45 GHz and the bandwidth of 66.1%. Also, the return loss and isolation are 19.52dB and 19.47dB, respectively, at the center frequency.

• Journal of Korea Multimedia Society
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• v.4 no.2
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• pp.145-160
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• 2001

With the rapid of computer applications and digital communication networks, group based applications on the open network have been common tendency. The multicast infrastructure has played an important researching part in this application area. However the conventional solutions to achieve the secure and efficient structure don't satisfy all requirements. In this study, we classified and analyzed several existing multicast key management structure on the safety, the efficiency and the strengthen. Based on the analysis, we developed a new secure and efficient multicast key management structure. By comparing various aspects, that the number of communication and computation, of the new and the conventional methods, we were able to demonstrate the effectiveness of the proposed method.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.3 no.1
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• pp.24-30
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• 2010

In this paper, a novel electrically small monopole type resonant antenna is proposed. The very short length monopole (${\iota}{\approx}{\lambda}_g/15$ ) acts as a capacitive element and the slot on the ground structure acts as an inductive element, hence the combined system with these two elements thus form an LC resonator. The equivalent circuit model of the antenna structure was used to analysis and qualify the design correctness. Although the proposed antenna has very small size, it shows good performances. The measured maximum gain and radiation efficiency of the fabricated antenna at the frequency of 2.1 GHz was 3.6 dBi and 77.8 %, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1459-1461
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• 1996

The optical and electrical properties of High Power AlGaAs/AlGaAs Infrared LED with DDH( Double power Double Hetero Junction) structure are investigated. The high power LED is recently studied in order to apply to high speed communication devices. The power out of AlGaAs/AlGaAs with DDH structure is 13.0[mW], the forward voltage is 1.45[V], and the average decrease rate of power out is about 5[%] after aging test. The optical and electrical properties of DDH structure LED are superior than that of SH structured LED. The DDH structured LED is suitable to the high speed communication devices.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.173-178
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• 2009

We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.1 no.3
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• pp.3-8
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• 2008

In this paper, an planar antenna which has omnidirectional radiation pattern in H-plane and low profile is proposed. By adding inductance elements of an ENG shell structure, a capacitance element of an electrically small antenna is easily achieved with impedance matching. An ENG shell structure is consist of a inductive loading structure which has symmetrical four stepped L-shape slots. The simulated result shows, the impedance bandwidth of the proposed antenna is 150MHz (2.5 ~ 2.65GHz). The simulated maximum radiation gain of proposed antenna is 1.12 dBi at center frequency 2.56GHz. Omnidirectional radiation pattern is achieved. The proposed antenna will be applied to wireless lan access point system.

• Journal of IKEEE
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• v.26 no.1
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• pp.129-132
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• 2022

In this paper, a technique for optimizing the sub-array system structure that can minimize the side lobe level of the phased-array antenna is proposed. Optimization of the proposed array antenna structure is to adjust the spacing between sub-arrays and sub-arrays by using a hexagonal array structure of one sub-array and a hexagonal sub-array for six hexagonal arrays, and thus the entire phased array antenna system of the radiation pattern was optimized. Compared to the 2-dimensional planar antenna system, the proposed technique maintains a gain of 24.3 dBi and a half-power beam-width of 8.46 degrees without change, and only reduces -3.4 dB and -6.5 dB in the x-axis and y-axis directions, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.328-334
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• 2012

This paper proposes a design technique of wide-band antenna for handy phone with 700 MHz LTE(Long Term Evolution) low frequency bandwidth. The proposed antenna based on the PIFA(Planar Inverted-F type Antenna) structure was designed and considered. In order to realize the wide bandwidth, a round structure which is able to control the electric path length of current and a branch line element which can be obtain the dual resonance characteristics were introduced in this design. As a result, It was realized about 95 MHz bandwidth in spite of very small space of $30{\times}34mm$ used for FR-4 substrate with relative permitivity of 4.4 at 700 MHz band. Measurement results of return loss, bandwidth and gain radiation pattern were agreed well with their calculation results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.12 s.91
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• pp.1161-1167
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• 2004

The conventional PLL(phase locked loop) frequency synthesizer takes a long switching time because of the inherent closed-loop structure. The digital hybrid PLL(DH-PLL) which includes the open-loop structure into the conventional PLL synthesizer has been studied to overcome this demerit. It operates in high speed, but the hardware complexity and power consumption are the serious problem because the DLT(digital look-up table) is usually implemented by the ROM which contains the transfer characteristic of VCO(voltage controlled oscillator). This paper proposes a new DH-PLL using a very simple DLT-replacement digital logic instead of the complex ROM-type DLT. Also, a timing synchronization circuit for the very small over-shoot and shorter settling time is designed for the ultra fast switching speed at every frequency synthesis. The hardware complexity gets decreased to about $28\%,$ as compared with the conventional DH-PLL. The high speed switching characteristic of the frequency synthesis process can be verified by the computer simulation and the circuit implementation.