• Polymer(Korea)
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• v.35 no.3
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• pp.249-253
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• 2011

The effect of morphological development in PET/PEN blending on the physical properties of PET/PEN blend film as a flexible substrate was investigated. The two phase morphology was obtained in PET/PEN blends and it caused the improvement of dimensional stability of PET/PEN blend as a flexible substrate. The two phase morphology and crystallinity of PET/PEN blends could be controlled by the transesterification between PET and PEN during the film processing and this macroscopic structural development affected the dimensional stability of PET/PEN blend films. Better dimensional stability was obtained with increasing crystallinity and decreasing the level of transesterification.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.3
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• pp.115-120
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• 2022

A brown ring (hereinafter referred to as BR) on the inner surface of a quartz glass crucible used in the manufacturing process of a silicon ingot for semiconductor wafers was studied. BR is 20~30 ㎛ in size and has an asymmetric brown ring shape. The size and distribution of BR were different depending on the crucible location, and the size and distribution of BR were the largest and most abundant in the round part with the highest crucible temperature during Si ingot growth. BR contains cristobalite, which has a higher coefficient of thermal expansion than quartz glass, so it is considered that surface cracks appear. The color development of BR and pin holes are presumed to be due to oxygen vacancies.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.2
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• pp.61-68
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• 2023

Ti and Ti alloys are used in the automobile and aerospace industries due to their high specific strength and excellent corrosion resistance. However their application is limited due to poor formability at room temperature and high unit cost. In order to overcome these issues, dissimilarly jointed materials, such as cladding materials, are widely investigated to utilize them in each industrial field because of an enhanced plasticity and relatively low cost. Among various dissimilar bonding processes, the rolled cladding process is widely used in Ti alloys, but has a disadvantage of low bonding strength. Although this problem can be solved through post-heat treatment, the mechanical properties at the bonded interface are deteriorated due to residual stress generated during post-heat treatment. Therefore, in this study, the microstructure change and residual stress trends at the interfaces of Ti/Al cladding materials were studied with increasing post-heat treatment temperature. As a result, compared to the as-rolled specimens, no difference in microstructure was observed in the specimens after postheat treatment at 300, 400, and 500℃. However, a new intermetallic compound layer was formed between Ti and Al when post-heat treatment was performed at a temperature of 600℃ or higher. Then, it was also confirmed that compressive residual stress with a large deviation was formed in Ti due to the difference in thermal expansion coefficient and modulus of elasticity between Ti Grade II and Al 1050.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.35-41
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• 1999

In this study we investigated the effects of process variables on the bond strength, and its dependency upon the interfacial chemistry when the joined $ZrO_2$ toughened $Na\beta$"-alumina to $\alpha$-alumina using B$_2$$O_3$-$SiO_2$-Al$_2$$O_3$-CaO glass sealant. We observed that bond strength is mainly determined by the strength of the glass, which, in turn, depends on the glass composition established after joining reaction. Joining at $950^{\circ}C$ for 15min yielded the highest average bond strength of 66MPa. Different types of interfacial reaction seem to occur at each interface. After joining at $950^{\circ}C$ for 15min we found that Ca and Si diffuse much deeper(~15$\mu\textrm{m}$) into the $\beta$"-alumina composite than into the $\alpha$-alumina(<1$\mu\textrm{m}$) as a result of ion exchange reaction and more effective grain boundary diffusion. Thermal expansion coefficient of the glass was found to have changed more closely to those of the $\beta$"-alumina composite and $\alpha$-alumina, which put the glass under a slight compressive stress.ressive stress.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.645-651
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• 2014

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.10
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• pp.1514-1519
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• 2001

This paper is concerned with design, manufacturing and performance test of LIPCA ( Lightweight Piezo- composite Curved Actuator) using a top carbon fiber composite layer with near -zero CTE(coefficient of thermal expansion), a middle PZT ceramic wafer and a bottom glass/epoxy layer with high CTE. The main point of this design is to replace the heavy metal layers of THUNDER by thigh tweight fiber reinforced plastic layers without losing capabilities to generate high force and large displacement. It is possible to save weight up to about 30% if we replace the metallic backing material by the light fiber composite layer. We can also have design flexibility by selecting the fiber direction and the size of prepreg layers. In addition to the lightweight advantage and design flexibility, the proposed device can be manufactured without adhesive layers when we use epoxy resin prepreg system. Glass/epoxy prepregs, a ceramic wafer with electrode surfaces, and a graphite/epoxy prepreg were simply stacked and cured at an elevated temperature (177 $^{circ}C$ after following an autoclave bagging process. It was found that the manufactured composite laminate device had a sufficient curvature after detached from a flat mold. The analysis method of the cure curvature of LIPCA using the classical lamination theory is presented. The predicted curvatures are fairly in agreement with the experimental ones. In order to investigate the merits of LIPCA, a performance test of both LIPCA and THUNDE$^{TM}$ were conducted under the same boundary conditions. From the experimental actuation tests, it was observed that the developed actuator could generate larger actuation displacement than THUNDERT$^{TM}$.

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.1-5
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• 2011

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.384-388
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• 2008

Hydrogen production via high high-temperature steam electrolysis consumes less electrical energy than compared to conventional low low-temperature water electrolysis, mainly due to the improved thermodynamics and kinetics at elevated temperaturetemperatures. The elementalElemental powders of Cu, Ni, and YSZ are were used to synthesize high high-temperature electrolysis cathodecathodes, of Ni/YSZ and Cu/YSZ composites, by mechanical alloying. The metallic particles of the composites were uniformly covered with finer YSZ particles. Sub-micron sized pores are were homogeneously dispersed in the Ni/YSZ and Cu/YSZ composites. In this study, The cathode materials were synthesized and their Characterizations properties were evaluated in this study: It was found that the better electric conductivity of the Cu/YSZ composite was measured improved compared tothan that of the Ni/YSZ composite. Slight A slight increase in the resistance can be produced for in a Cu/YSZ cathode by oxidation, but it this is compensated offset for by a favorable thermal expansion coefficient. Therefore, Cu/YSZ cermet can be adequately used as a suitable cathode material of in high high-temperature electrolysis.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.57-65
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• 2017

The electronic components in mobile device are composed of electronic chips and various other materials. These components become extremely thin and the constituent materials have different coefficient of thermal expansion, so that considerable warpages occurs easily due to temperature change or external load. Shadow $moir{\acute{e}}$ is non-contact, whole field technique for measuring out-of-plane displacement, but the measurement sensitivity is not less than $50{\mu}m/fringe$, which is not suitable for measuring the warpage of the electronic components. In this paper, we implemented a measurement method with enhanced sensitivity of $25{\mu}m/fringe$ by investigating and optimizing various experimental conditions of the shadow $moir{\acute{e}}$. In addition, four $moir{\acute{e}}$ fringe patterns recorded by the phase shift are processes to obtain a $moir{\acute{e}}$ fringe patterns with a sensitivity four times higher. The measurement technique is applied to small electronic components of a smart phone for measuring warpage with a high sensitivity of $5{\mu}m/fringe$ at room temperature and at the temperature of $100^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.44-49
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• 1999

In this study, microstructure and electrical conductivity of {(G $d_2$ $O_3$)$_{0.75}$( $Y_2$ $O_3$)$_{0.25}$}$_{x}$ (Ce $O_2$)$_{1-x}$ (0.01$\leq$x$\leq$0.25) was investigated as a function of composition x. GYO addition(x) increased the bulk density and G $d_2$ $O_3$ was found to be monoclinic at x>0.15. From the change of the lattice parameter with the addition(x), GYO solution limit for ceria was exceeded in the range of x=0.05 to 0.09. Thermal expansion coefficient(15~17$\times$10$^{-6}$ $^{\circ}C$) of GYC samples at x=0.01 to 0.07 was higher in value than that of 8YSZ(10.8$\times$10$^{-6}$ $^{\circ}C$). The electrical conductivity of GYC samples at x=0.05 showed the maximum(0.01S/cm) in value at 1073K which was 2 times higher than that of 8YSZ. The activation energy for the electrical conduction was determined to be 0.60eV in the temperature range of 1073K.3K..3K.