• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.436-439
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• 2000

Change of dielectric loss of use in high relative permitivity capacitor BaTiO$_3$ ceramic depends on Mn doping have been investigated. The powders used in this study were commercial BaTiO$_3$, TiO$_2$and, MnCO$_3$. Sample was fabricated by conventional ceramic process. The quantity of Mn was changed gradually from 0.lmol% to 10mo1%. The sintering densities were reduced with increasing amount of MnCO$_3$. This result is because of increase of low density second phase BaMnO$_3$. When the samples were doped by over 0.2mol% of MnCO$_3$, average grain sizes were enlarge to several tens ${\mu}{\textrm}{m}$. The dielectric losses were reduced by Mn doping to lmol% but, increased from lmol% to 10mo1% gradually.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.9
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• pp.1599-1605
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• 2008

The research was conducted in order to improve the hydrogen generation efficiency of the electrical plasma technology from tap water by using $TiO_2$ photocatalyst, mixed Cu - $TiO_2$ powder, and mixed Ni - $TiO_2$ powder as the catalysts. Experiments were performed with the pulsed power and nitrogen carrier gas. The result has shown that the hydrogen concentration with the presence of $TiO_2$ powder was created higher than that of without using photocatalyst. The hydrogen concentration with using $TiO_2$ was 3012ppm corresponding to the applied voltage of 16kV, while it without using the $TiO_2$ was 1464ppm at the same condition . The effect of $TiO_2$ powder was strongly detected at the applied voltages of 15kV and 16kV. This phenomena might be resulted from the co-effect of the pulsed power discharge and the activated state of $TiO_2$ photocatalyst. The co-effect of the mixed catalysts such as Cu-$TiO_2$ and Ni-$TiO_2$ (the mixed photocatalyst $TiO_2$ and transition metals) were also investigated. The experimental results showed that, Cu and Ni powder dopants were greatly enhancing the activity of the $TiO_2$ photocatalyst. Under these experimental conditions the extremely high hydrogen concentrations at the optimal point were produced as 4089ppm and 6630ppm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.448-449
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• 2006

For the possible applicative pearl pigment, multi-layered $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ thin film was deposited on glass substrate by using sputtering method. $TiO_2$ and Al or Cr was selected as a possible high and low refraction materials at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al/TiO_2$, $TiO_2/Cr/TiO_2$ layers show the wavelength range of 430 - 760nm, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well matched with the experimental one.

• Journal of the Korean institute of surface engineering
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• v.51 no.3
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• pp.157-163
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• 2018

The anodic $TiO_2$ layers which are prepared in various anodization conditions exhibit their specific color depending on the thickness of $TiO_2$. In this study, the relationship between the color of $TiO_2$ layer, which is grown by PEO (Plasma electrolytic oxidation), and the thickness of the $TiO_2$ layer is investigated. To evaluate the color change of the $TiO_2$ layer, the value of color ($dE^*ab$) is measured and calculated by spectrophotometer and chromameter. As a result, it is found that $dE^*ab$ values and thickness of $TiO_2$ layers form a linear relationship with meaningful formular. This formula can be helpful to quantify the thickness of the $TiO_2$ layer by the numerical $dE^*ab$ values. In this process, the spectrophotometer shows more precise results than the chromameter dose. If fluoride ions ($F^-$) are included in the electrolyte, it will affect the $dE^*ab$ values of the $TiO_2$. layer. This is against the propensity, which is analyzed by XRD (X-ray diffraction) and XPS (X-ray photoelectron spectroscopy). It is important that the formular suggested in this study provides other metals which can be also anodized with the possibility of quantifying the thickness of the $TiO_2$ layer by the $dE^*ab$ values.

• Journal of the Korean Society for Heat Treatment
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• v.8 no.1
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• pp.32-43
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• 1995

Ti-6Al-4V alloy are widely used in chemical and aircraft industries for their good corrosion resistance and high strength to weight ratio. Surface alloying of Ti alloy by $CO_2$ laser is able to produce few hundred micrometers thick TiN surface-alloyed layer with high hardness on the substrate very simplely by injecting reaction gas($N_2$) into a laser-generated melt pool and adjust the hardness to the specific requirements of the individual application by changing of laser processing parameters. This research has been investigated the effect of such parameters on TiN surface-alloying of Ti-6Al-4V alloy by $CO_2$ laser. The maximum hardness of TiN surface-alloyed zone waw obtained by injecting 100% $N_2$ gas and it was decreased as the amount of $N_2$ gas in Ar and $N_2$ gas mixture was decreased. As scanning speed was increased, the hardness and depth of TiN surface-alloyed zone was decreased at constant laser power. The surface hardness after double scanning laser treatment is higher than that of single scanning. At constant laser power, the surface roughness is increased after the surface alloying if laser scanning speed is decreased.

• Corrosion Science and Technology
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• v.12 no.3
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.165-168
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• 2008

Ta-doped thin films were deposited on quartz and indium-tin oxide glass substrates using a co-sputtering method. The Ta-doped films formed a solid solution that induced structural changes from rutile to anatase phase. The anodic photocurrents of the Ta-doped $TiO_2$ electrodes were observed not only in UV but also in the visible light range. The photocurrent response in visible light on Ta-doped $TiO_2$ films are due to bandgap reduction.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.570-574
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• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.166-166
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• 2003

Si (100) 기판위에서 에피텍셜하게 자란 CoSi$_2$층은 우수한 열적안정성, 낮은 junction leakage, ultra-Shallow junction형성 등의 장점으로 인하여 많은 주목을 받아왔다. 그래서 에피텍셜 CoSi$_2$층을 형성하기 위한 많은 방법들이 보고되어 왔다. 그 방법으로는 Ti나 TiN층을 이용한 interlayer mediated epitaxy, Co의 제한적 공급을 통한 molecular beam epitaxy와 molecular beam allotaxy, 그리고 금속유기소스를 이용한 반응성화학기상증착법등이 있다. 하지만 이 방법들은 복잡한 증착공정과 열처리 후 잔류층 제거의 어려움등을 가지고 있다. 본 연구는 일반적으로 사용되는 Ti나 oxide의 중간층없이 에피층을 형성시키는 새로운 방법으로 CO-O-N 박막으로부터 열처리에 의해 확산된 Co로부터 CoSi$_2$에피층을 형성시켰다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.11-11
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• 1997