• 방사성폐기물학회지
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• 제19권2호
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• pp.161-176
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• 2021

In this study, the electrochemical behavior of Sm on the binary liquid Al-Ga cathode in the LiCl-KCl molten salt system is investigated. First, the co-reduction process of Sm(III)-Al(III), Sm(III)-Ga(III), and Sm(III)-Ga(III)-Al(III) on the W electrode (inert) were studied using cyclic voltammetry (CV), square-wave voltammetry (SWV) and open circuit potential (OCP) methods, respectively. It was identified that Sm(III) can be co-reduced with Al(III) or Ga(III) to form Al_zSm_y or Ga_xSm_y intermetallic compounds. Subsequently, the under-potential deposition of Sm(III) at the Al, Ga, and Al-Ga active cathode was performed to confirm the formation of Sm-based intermetallic compounds. The X-ray diffraction (XRD) and scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS) analyses indicated that Ga₃Sm and Ga₆Sm intermetallic compounds were formed on the Mo grid electrode (inert) during the potentiostatic electrolysis in LiCl-KCl-SmCl₃-AlCl₃-GaCl₃ melt, while only Ga₆Sm intermetallic compound was generated on the Al-Ga alloy electrode during the galvanostatic electrolysis in LiCl-KCl-SmCl₃ melt. The electrolysis results revealed that the interaction between Sm and Ga was predominant in the Al-Ga alloy electrode, with Al only acting as an additive to lower the melting point.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1998년도 춘계연구발표회 논문개요집
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• pp.92-93
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• 1998

• Journal of Magnetics
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• 제12권3호
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• pp.97-102
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• 2007

We have investigated the electronic structures and magnetism of a full Heusler alloy $Co_2CrGa(001)$ surface by using the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). We considered two types of different terminations: the Co-terminated (Co-Term) and the CrGa-terminated (CrGa-Term) surfaces. From the calculated layer-projected density of states (LDOS), we found that the surface of the CrGa-Term shows nearly half-metallic character while that of the Co-Term is far from the half-metallic. For the Co-Term, the surface Co atom moves down to the bulk region by $0.05{\AA}A$, while the subsurface Cr and Ga atoms move up to the surface layer by 0.05 and $0.01{\AA}$, respectively. For the CrGa-Term, there is a large inward relaxation of the surface Ga atom $(0.07{\AA})$, but the relaxation of the surface Cr atom is very small $(0.01{\AA})$. The relaxations affect not much to the overall shapes of DOS for both terminations, but make the surface states of the surface Cr and Ga atoms for the CrGa-Term shift to higher energy that enhances the nearly half-metallic character of the CrGa-Term. The magnetic moments of the surface $Cr(2.98{\mu}_B)$ in the CrGa-Term and the surface $Co(1.17{\mu}_B)$ in the Co-Term were much increased compared to those of the inner-layers $(1.79\;and\;0.77{\mu}_B)$, respectively, while that of the subsurface Cr atom in the Co-Term was decreased to $1.19{\mu}_B$.

• Journal of Magnetics
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• 제4권4호
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• pp.131-135
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• 1999

The HDDR characteristics of the Nd-Fe-B-type isotropic and anisotropic HDDR alloys were investigated using three types of alloys: alloy A $(Nd_{12.6}Fe_{81.4}B_6), alloy B (Nd_{12.6}Fe_{81.3}B_6Zr_{0.1}), and alloy C (Nd_{12.6}Fe_{68.8}Co_{11.5}B_6Ga_{1.0}Zr_{0.1}$). The alloy A is featured with the isotropic HDDR character, while alloy B and C are featured with the anisotropic HDDR character. Hydrogenation and disproportionation characteristics of the alloys were examined using DTA under hydrogen gas. Recombination characteristics of the alloys were examined by observing the coercivity variation as a function of recombination time. The present study revealed that the alloy C exhibits slightly higher hydrogenation and disproportionation temperatures compared to the alloy A and B. Recombination of the anisotropic alloy B and C takes place more rapidly with respect to the isotropic alloy A. The intrinsic coercivities of the recombined materials rapidly increased with increasing the recombination time and then showed a peak, after which the coercivities decreased gradually. The degraded coercivity was, however, recovered significantly on prolonged recombination treatment. Compared with the isotropic HDDR alloy A the anisotropic HDDR alloy B and C are notable for their greater recovery of coercivity. The significant recovery of coercivity was accounted for the in terms of the development of well-defined smooth grain boundary between the recombined grains on prolonged recombination.

• Corrosion Science and Technology
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• 제9권2호
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• pp.74-80
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• 2010

For the purpose of applying a hot-dip Zn-6mass%Al-3mass%Mg alloy coated steel sheet (ZAM) to automotive body materials, a laboratory study of the general properties required for inner and outer panels of automotive bodies was performed. Even with only light coating weight, ZAM showed an excellent corrosion resistance in terms of both cosmetic and perforation corrosion compared to the currently used materials for automotive bodies, GI70 and GA45. In our study, it was confirmed that ZAM exhibits as good as or better properties than GI70 in terms of spot weldability and press formability. Furthermore, since the same corrosion resistance can be achieved with less coating weight by applying ZAM, laser weldability is better than GI and GA.

• 한국진공학회지
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• 제13권2호
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• pp.86-91
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• 2004

전이금속 갈라이드는 고온 응용성이 높은 물질로 관심을 모으고 있다. CsCl구조를 갖는 것으로 알려진 넓은 조성 범위에서 전이금속 갈라이드에 대해 물리적 특성과 전자구조의 상호관계에 대해 체계적인 연구를 하였다. $Co_{l-x}Ga$ $_{x}$ 합금($0.35\leq$x$\leq0.55$)을 arc-melting 방법으로 제작하였으며, 합금 제작 후 시료의 균질성을 높이기 위해 $1000 ^{\circ}C$에서 48시간동안 열처리하였다. 결정 구조를 알아보기 위해 x-ray diffraction을 측정한 결과, 이 조성 범위 안에서 모두 CsCl(B2)구조를 갖는 것으로 밝혀졌다. 화학적 상태와 전자 구조를 알아보기 위해서 x-선 광전자 분광, 그리고 x-선 흡수끝머리 부근 미세구조 (XANES)를 측정하였으며, 조성에 따라 서로 다른 물리적 특성을 보였다. 합금제작 과정에서 시료의 산화가 이루어졌으며 포함된 산소는 Ga과 결합하여 $Ga_2O_3$상을 이루었다. 전자 구조적으로 Co의 d 전자와 Ga의 p 전자사이의 p-d hybridization에 의해 합금이 형성되었다.

• Journal of Magnetics
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• 제10권4호
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• pp.152-156
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• 2005

Effects of the disproportionating hydrogen pressure and alloy composition on the texture in the HDDR-treated Nd-Fe-B particles were examined using the $Nd_{12.6}Fe_{81.4}B_6$ and $Nd_{12.6}Fe_{68.7}B_6Co_{11.0}Ga_{1.0}Zr_{0.l}$ alloys. Disproportionation kinetics of the $Nd_2Fe_{14}B$ phase in the Nd-Fe-B alloy was retarded significantly by the addition of Co, Ga and Zr. The retarded disproportionation kinetics of the $Nd_2Fe_{14}B$ phase ensured a wider processing win­dow in terms of disproportionating hydrogen pressure for achieving a texture in the HDDR-treated Nd-Fe-B alloy particles.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.733-737
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• 2008

In this paper, Ni-Co alloy was used to improve thermal stability of Ni Germanide. It was found that uniform germanide is obtained on epitaxial Ge-on-Si substrate by employing Ni-Co alloy. Moreover, neither agglomeration nor penetration is observed during post-germanidation annealing process. The thermal stability of Ni germanide using Ni-Co alloy is improved due to the less agglomeration of Germanide. Therefore, the proposed Ni-Co alloy is promising for highly thermal immune Ni germanide for nano scale Ge-MOSFETs technology.

• 한국분말재료학회지
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• 제19권4호
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• pp.264-270
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• 2012

In this study, we mainly focus on the study of densification of gas-atomized Cu-50 wt.%In-13 wt.%Ga alloy powder without occurrence of crack during the forming process. Cu-50 wt.%In-13 wt.%Ga alloy powder was consolidated by sintering and rolling processes in order to obtain high density. The phase and microstructure of formed materials were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical microscopy (OM), respectively. Warm rolling using copper can result in the improvement of density. The specimen obtained with 80% of rolling reduction ratio at $140^{\circ}C$ using cooper can have the highest density of $8.039g/cm^3$.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.18-22
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• 2008

In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.