Browse > Article
http://dx.doi.org/10.4313/JKEM.2008.21.8.733

Thermal Stability Improvement of Ni-germanide using Ni-Co alloy for Ge-MOSFETs Technology  

Park, Kee-Young (충남대학교 전자공학과)
Jung, Soon-Yen (충남대학교 전자공학과)
Zhang, Ying-Ying (충남대학교 전자공학과)
Han, In-Shik (충남대학교 전자공학과)
Li, Shi-Guang (충남대학교 전자공학과)
Zhong, Zhun (충남대학교 전자공학과)
Shin, Hong-Sik (충남대학교 전자공학과)
Kim, Yeong-Cheol (한국기술교육대학교 신소재공학과)
Kim, Jae-Jun (한국기술교육대학교 신소재공학과)
Lee, Ga-Won (충남대학교 전자공학과)
Wang, Jin-Suk (충남대학교 전자공학과)
Lee, Hi-Deok (충남대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.8, 2008 , pp. 733-737 More about this Journal
Abstract
In this paper, Ni-Co alloy was used to improve thermal stability of Ni Germanide. It was found that uniform germanide is obtained on epitaxial Ge-on-Si substrate by employing Ni-Co alloy. Moreover, neither agglomeration nor penetration is observed during post-germanidation annealing process. The thermal stability of Ni germanide using Ni-Co alloy is improved due to the less agglomeration of Germanide. Therefore, the proposed Ni-Co alloy is promising for highly thermal immune Ni germanide for nano scale Ge-MOSFETs technology.
Keywords
Ni-Co alloy; Ni-germanide; Thermal stability; Ge-MOSFETs;
Citations & Related Records
연도 인용수 순위
  • Reference
1 S. Zhu and A. Nakajima, "Annealing temperature dependence on nickel-germanium solid-state reaction", Jpn. J. Appl. Phys., Vol. 44, No. 24, p. L753, 2005   DOI
2 P. Zimmerman, G. Nicholas, B. Jaeger, B. Kaczer, A. Stesmans, L. A. Ragnarsson, D. P. Brunco, F. E. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, and M. M. Heyns, "High performance Ge pMOS devices using a Si-compatible process flow", IEDM Tech. Dig., p. 1, 2006
3 K. Chen, H. Wann, J. Duster, D. Pramanik, S. Nariani, P. Ko, and C. Hu, "An accurate semi-empirical saturation drain current model for LDD n-MOSFET", Electron Devices Lett., Vol. 17, No. 3, p. 145, 1996   DOI   ScienceOn
4 Y. Zhang, J. Oh, T. Bae, Z. Zhong, S. Li, S. Jung, K. Park, G. Lee, J. Wang, P. Majhi, B. Lee, H. Tseng, Y. Jeong, and H. Lee, "Phase separation of Ni germanide formed on a Ge-on-Si structure for Ge MOSFETs", Electrochem. Solid State Lett., Vol. 11, No. 1, p. H1, 2008   DOI
5 K. Park, B. H. Lee, D. Lee, D.-H. Ko, K. H. Kwak, C.-W. Yang, and H. Kim, "A study on the thermal stabilities of the NiGe and Ni1−-xTaxGe systems", Electrochem. Solid State Lett., Vol. 154, No. 7, p. H557, 2007
6 S. P. Ashburn, M. C. Ozturk, G. Harris, and D. M. Maher, "Phase transitions during solid-state formation of cobalt germanide by rapid thermal annealing", J. Appt. Phys., Vol. 74, No. 7, p. 4455, 1993   DOI   ScienceOn
7 N. Wu, Q. Zhang, N. Balasubramanian, D. S. H. Chan, and C. Zhu, "Characteristics of self-aligned gate-first Ge p- and n- channel MOSFETs using CVD $HfO_2$ gate dielectric and Si surface passivation", IEEE Trans. Electron Devices, Vol. 54, No. 4, p. 733, 2007   DOI   ScienceOn
8 J. W. Oh, P. Majhi, H. D. Lee, W. S. Yoo, S. Banerjee, C. Y. Kang, J. W. Yang, R. Harris, H. H. Tseng, and R. Jammy, "Improved electrical characteristics of Ge-on-Si field-effect transistors with controlled Ge epitaxial layer thickness on Si substrates", Electron Devices Lett., Vol. 28, No. 11, p. 1044, 2007   DOI   ScienceOn