• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.683-687
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• 2017

We investigated the structure of an ultra-thin insulating board with low thermal conductivity along z-axis, which was based on the idea of void layers created during the glass infiltration process for the zero-shrinkage low-temperature co-fired ceramic (LTCC) technology. An alumina and four glass powders were chosen and prepared as green sheets by the tape casting method. After comparison of the four glass powders, bismuth glass was selected for the experiment. Since there is no notable reactivity between alumina and bismuth glass, alumina was selected as the supporting additive in glass layers. With 2.5 vol% of alumina powder, glass green sheets were prepared and stacked alternately with alumina green sheet to form the 'alumina/glass (including alumina additive)/alumina' structure. The stacked green sheets were sintered into an insulating substrate. Scanning electron microscopy revealed that the additive alumina formed supporting bridges in void layers. The depth and number of the stacking layers were varied to examine the insulating property. The lowest thermal conductivity obtained was 0.23 W/mK with a $500-{\mu}m-thick$ substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.286-286
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• 2011

최근 폴리머를 기판으로 하는 Flexible TFT (thin film transistor)나 3D-ULSI (three dimensional ultra large-scale integrated circuit)에서 높은 에너지 소비효율과, 빠른 반응 속도를 실현 시키기 위해 낮은 비저항(resistivity)을 가지며, 높은 홀 속도(carrier hall mobility)를 가지는 다결정 반도체 박막(poly-crystalline thin film)을 만들고자 하고 있다. 이를 실현 시키기 위해서는 높은 온도에서 장시간의 열처리가 필요하며, 이는 폴리머 기판의 문제점을 야기시킬 뿐 아니라 공정시간이 길다는 단점이 있었다. 이에 반도체 박막의 재결정화 온도를 낮춰주는 metal (Al, Ni, Co, Cu, Ag, Pd etc.,)을 이용하여 결정화 시키는 방법이 많이 연구 되어지고 있지만, 이 또한 재결정화가 이루어진 반도체 박막 안에 잔여 금속(residual metal)이 존재하게 되어 비저항을 높이고, 홀 속도를 감소시키는 단점이 있다. 이에 본 실험은 HiPIMS (High power impulse magnetron sputtering)와 PIII and D (plasma immersion ion implantation and deposition) 공정을 복합시킨 프로세스로 적은양의 금속이온주입을 통하여 재결정화 온도를 낮췄을 뿐 아니라, 잔여 하는 금속의 양도 매우 적은 다결정 반도체 박막을 만들 수 있었다. 분석 장비로는 박막의 결정화도를 측정하기 위해 GAXRD (glancing angle X-ray diffractometer)를 사용하였고, 잔여 하는 금속의 양과 화학적 결합 상태를 알아보기 위해 XPS를 통해 분석을 하였다. 마지막으로 홀 속도와 비저항을 측정하기 위해 Hall measurement와 Four-point prove를 사용하였다.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.348-353
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• 2012

We investigated chemical states of a $Sb_2Te_3$ thin film with the polycrystalline phase by using high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. The $Sb_2Te_3$ thin film was formed by sputtering. The rhombohedral phase was confirmed by x-ray diffraction. To remove the surface oxide, we performed $Ne^+$ ion sputtering for 1 hour with the beam energy of 1 kV and post-annealing at $100^{\circ}C$ for 5 min in ultra-high vacuum. We obtained the Te and Sb 4d core-levels spectra with the peaks at the binding energies of 40.4 and 33.0 eV, respectively. The full-width of half maximum of both the Te and Sb $4d_{5/2}$ core-levels is 0.9 eV. The Te and Sb core-levels only show a single chemical state, and we also confirmed the stoichiometry of approximately 2 : 3.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.28-35
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• 2010

In the display industry, COG bonding method is being applied to production of LCD panels that are used for mobile phones and monitors, and is one of the mounting methods optimized to compete with the trend of ultra small, ultra thin and low cost of display. In COG bonding process, electrical characteristics such as contact resistance, insulation property, etc and mechanical characteristics such as bonding strength, etc depend on properties of conductive particles and epoxy resin along with ACF materials used for COG by manufacturers. As the properties of such materials have close relation to optimization of bonding conditions such as temperature, pressure, time, etc in COG bonding process, it is requested to carry out an in-depth study on characteristics of COG bonding, based on which development of bonding process equipment shall be processed. In this study were analyzed the characteristics of COG bonding process, performed the analysis and reliability evaluation on electrical and mechanical characteristics of COG bonding using ACF to find optimum bonding conditions for ACF, and performed the experiment on bonding characteristics regarding fine pitch to understand the affection on finer pitch in COG bonding. It was found that it is difficult to find optimum conditions because it is more difficult to perform alignment as the pitch becomes finer, but only if alignment has been made, it becomes similar to optimum conditions in general COG bonding regardless of pitch intervals.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.550-555
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• 2001

A diamond-like carbon(DLC) films were deposited on the borosilicate glass substrate by radio frequency plasma enhanced chemical deposition(rf-PECVD). The $methane(CH_4)-hydrogen(H_2)$ gas mixture was used as precursor gas. The morphologies, the structure and the optical properties of the DLC films were investigated by SEM, Raman and UV spectrometer. The deposition rate was slightly increased with the hydrogen concentration in the gas mixture and it maintained constant at over 25 sccm of the gas flow rate. The optical band gap calculated by UV spectra decreased with increase of deposition time and DC self bias, but that were not effected by hydrogen content. Most effective parameter on the transmittance of film was bias voltage, especially in the range of ultra violet and visible light.

• Journal of Magnetics
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• v.12 no.3
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• pp.118-123
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• 2007

We have studied the effect of Au-Cu back layer system ${\sim}10{\AA}$ thick on the properties of a spin valve. The back layers were Cu, Au, co-sputtered $Cu_xAu_{1-x}$, laminated $[Au/Cu]_n$. and bi-layer [Au/Cu]. When Au was added to the Cu, the resistance of the spin valve abruptly increased most likely due to impurity scattering. The GMR values were not increased significantly for all the structures. In the case of co-sputtered $Cu_xAu_{1-x}$, the changes in the resistance, ${\Delta}R$, was increased at a composition of ${\sim}Au_{0.5}Cu_{0.5}$. This increase in ${\Delta}R$ is due to increase in the resistance and not from the enhanced spin-dependent scattering. The structural analyses showed that the orthorhombic $Au_{0.5}Cu_{0.5}$ was formed in the back layer instead of the face-centered tetragonal $Au_{0.5}Cu_{0.5}$ as we expected. Thermal annealing over $400^{\circ}C$ may be required to have face-centered tetragonal in the $10{\AA}$ thick ultra-thin film. In the case of a laminated or bi-layered back layer, the properties of the spin valve were improved, which may be attributed to the increase in the mean free path of conduction electrons.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.98-106
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• 2009

This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.