• Title/Summary/Keyword: Co oxide

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Characteristics of Silicon Rich Oxide by PECVD (PECVD에 의한 Sirich 산화막의 특성)

  • Gang, Seon-Hwa;Lee, Sang-Gyu;Park, Hong-Rak;Go, Cheol-Gi;Choe, Su-Han
    • Korean Journal of Materials Research
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    • v.3 no.5
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    • pp.459-465
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    • 1993
  • By making the inter-metal PECVD $SiO_2$ as a Si rich oxide under the SOG, the hydrogen and water related diffusants could be captured a t SI dangling bonds. This gettering process was known to prevent the device characteristics degradations related to the H, $H_20$. The basic characteristics of Si rich oxide have been studied according to changing high/low frequency power and $SiH_4/N_2O$ gas flow ratio in PECVD. As increase in low frequency power, deposition rate decreased but K.I. and compressive stress increased. Decrease of the water peaks of FTIR spectra at the wave number range of 3300~3800$\textrm{cm}^{-1}$' also indicated that intensty the films were densified. As increase in SiH, gas flow rate, deposition rate, R.I. and etch rate increased while compressive stress decreased. F'TIK spectra showed that peak intensity corresponding to Si-0-Si stretching vibration decreased and shifted to the lower wave numbers. But AES showed that Si dangl~ng bonds were increased as a result of lower Si:O(l: 1.23) ratlo inthe Si rich oxide as compared to Si : O(1 : 1.98) ratio of usual oxide.

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Degradation Characteristics of Pr/Co/Cr/Er Co-doped Zinc Oxide Varistors by Impulse Current Stress

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.348-352
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    • 2014
  • In light of the sure protection function, the most important factors of a varistor are the clamping voltage ratio and degradation characteristics. The degradation characteristics of Pr/Co/Cr/Er co-doped zinc oxide varistors were investigated by impulse currents (0.4~2.1 kA) stress for the specified content of $Er_2O_3$ (0.5 and 2.0 mol%). The varistor doped with 2.0 mol% $Er_2O_3$ exhibited the best clamp characteristics, with the clamp voltage ratio (K) in the range of K = 1.63~1.88 at the impulse currents of 5-50 A. However, the varistor doped with 0.5 mol% exhibited excellent electrical stability, with variation rates for the breakdown field, for the nonlinear coefficient, and for the leakage current density of -6.9%, -12.6%, and -14.3%, respectively, after application of an impulse current of 2.1 kA. In contrast, the varistor doped with 2.0 mol% was destroyed after application of an impulse current of 1.2 kA.

Analysis of Sticking Coefficient in BSCCO Superconductor Thin Film Fabricated by Co-deposition (공증착법으로 제작한 BSCCO 초전도 박막의 부착계수 해석)

  • An, In-Soon;Chun, Min-Woo;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.300-303
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    • 2001
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_{2}O_{3}$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

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Electrochemical characteristics of Co/PVA composite electrode for supercapacotor (수퍼커패시터용 Co/PVA복합전극의 전기화학적특성)

  • Lee, Hee-Woo;Kim, Han-Joo;Ohsaka, Takeo;Park, Soo-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.577-580
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    • 2001
  • Very fine cobalt oxide ambigel powder were prepared using a unique solution chemistry associated with the sol-gel process. The mesoporous structure of the initial gel is maintained by removing fluid under conditions where the capillary forces that result extraction are either low or no existent, are either low or nonexistent. Controlling both the pore and solid architecture on the nanoscale offers a strategy for the design of supercapacitor. But $CoO_x$ have the low voltage, so we experiment using Co/PVA composite electrode.

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Evaluation of Sticking Coefficient in BSCCO Thin Film Fabricated by Co-sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Kwon-Hyun;Lee, Joon-Ung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.1
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    • pp.80-84
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    • 2000
  • BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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An Experimental Study on Scaling of Nitrogen Oxide emissions of H2/CO Non-premixed Turbulent Jet Flame with Coaxial Air (동축공기가 있는 H2/CO 비예혼합 난류 제트화염의 질소산화물 배출 상사식에 대한 실험적 연구)

  • Sohn, Kitae;Hwang, Jeongjae;Bouvet, Nicolas;Yoon, Youngbin
    • 한국연소학회:학술대회논문집
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    • 2012.04a
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    • pp.259-261
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    • 2012
  • The effect of fuel composition and coaxial air on the nitrogen oxide emission index was studied in a non-premixed turbulent jet flame. Validity of experimental setup and methodology is checked. The NOx emission trend is similar with previous works in hydrogen flame, but it's not well in $H_2/CO$ flame. Normalized EINOx scaling with modified $S_G$ applying near-field concept was conducted. Experimental data don't collapse single correlation curve, but partially same trend is observed in all cases.

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The Effect of Stabilizer(DPA, $CaCO_3$) Addition on the Shelf Life of the Single Base Propellant (단기추진제 저장수명에 미치는 안정제(DPA, $CaCO_3$) 첨가의 효과)

  • 윤근식;고석일;유승곤
    • Journal of the Korea Institute of Military Science and Technology
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    • v.6 no.2
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    • pp.9-19
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    • 2003
  • Nitrogen oxide gases which were produced by spontaneous reaction of nitrocellulose(NC) in the single base propellant accelerate the decomposition of propellant, and result in the reduction of shelf life. The amount of nitrogen oxide was reduced by the addition of 0.3wt% $CaCO_3$ to conventional stabilizer(DPA) and down of the solvent leaching temperature from $64^{\circ}C$ to $56^{\circ}C$, which extended the shelf life of the single base propellant as much as twice compare with commercial propellant. The perforation diameter increase of propellant from 0.64mm to 0.77mm could compensate for the drop of burning rate which was caused the addition of $CaCO_3$.

A Convenient Synthesis of Polycyclic γ-Lactams via Pauson-Khand Reaction

  • Kang, Seok-Won;Kim, Yong-Hoon;Kim, Hea-Jeong;Lee, Joo-Hee;Kim, Sung-Hoon
    • Bulletin of the Korean Chemical Society
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    • v.30 no.3
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    • pp.691-694
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    • 2009
  • Pauson-Khand reaction of hydroxyenynes with $Co_2(CO)_8$ in the presence of N-methylmorpholine N-oxide or trimethylamine N-oxide as a promoter produced polycyclic $gamma$-lactams as single stereoisomers in moderate to excellent yield. These are the first examples of an intramolecular Pauson-Khand reaction on a hydroxyenyne system tethered to a three- and four-membered ring as new skeletons with 5,6,5 fused ring systems.

Coulometric Titration Study on the Nonstoichiometry in Copper Doped Cobaltous Oxide ((${Co_{1-x}}{Cu_x}$)$_{1-\delta}$ O (전하적정법에 의한 (${Co_{1-x}}{Cu_x}$)$_{1-\delta}$ O의 산소 부정비량 측정)

  • ;Michael Schroeder;Manfred Martin
    • Journal of the Korean Ceramic Society
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    • v.37 no.8
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    • pp.799-804
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    • 2000
  • Coulometric titration experiments have been done for copper doped cobaltous oxide (Co1-xCux)1-$\delta$ O with various dopant concentrations. We present the obtained experimental data and compare our results to those of previous thermogravimetric investigation. The experimental data are fitted by theoretical calculations based on various defect models. For this modeling, we considered different types fo major defects like copper in substitutional and interstitial lattice sites as well as copper vacancy. We also introduced the copper evaporation effect during titration experiment into our consideration.

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Effects of Ru Co-Sputtering on the Properties of Porous Ni Thin Films

  • Kim, Woo-Sik;Choi, Sun-Hee;Lee, Hae-Weon;Kim, Joo-Sun
    • Journal of the Korean Ceramic Society
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    • v.43 no.11 s.294
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    • pp.746-750
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    • 2006
  • NiO films and Ru co-sputtered NiO films were deposited by reactive magnetron sputtering for micro-solid oxide fuel cell anode applications. The deposited films were reduced to form porous films. The reduction kinetics of the Ru doped NiO film was more sluggish than that of the NiO film, and the resulting microstructure of the former exhibited finer pore networks. The possibility of using the films for the anodes of single chamber micro-SOFCs was investigated using an air/fuel mixed environment. It was found that the abrupt increase in the resistance is suppressed in the Ru co-sputtered film, as compared to undoped film.