• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.241-245
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• 2007

[ $(Ba_{0.9-x}Sr_xCa_{0.10})TiO_3$ ] (x=0.33, 0.36) powders were prepared by sol-gel method. $(Ba,Sr,Ca)TiO_3$(BSCT) thick films, undoped and doped with $MnCO_3$ and $Yb_2O_3(0.1{\sim}0.7mol%)$, were fabricated by the screen printing method on the alumina substrate. The coating and drying procedure was repeated 6-times. The Pt bottom electrode was screen printing method on the alumina substrate. These BSCT thick films were annealed at $1420^{\circ}C$ for 2 hr in atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at $590^{\circ}C$ for 10 min. And then the structured and dielectric properties as a function of the doping amount of $Yb_2O_3$ were studied. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed XRD patterns of typical cubic peroveskite structure. The average thickness of BSCT thick films was about $70^{\mu}m$. The curie temperature and the dielectric constant decreased with increasing $Yb_2O_3$ doped content and the relative dielectric constant of the specimen, doped with 0.5 mol% $Yb_2O_3$ at BSCT(54/36/10), showed a best value of 5018 at curie temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.1-2
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• 2009

The high critical current ($I_c$, A) of SmBCO coated conductor in a magnetic field, the high production rate and the high material yield are promising for applications. The inhomogeneity of Ie at the long length coated conduct is very important problem for electric application. So we researched the reason of inhomogeneity of $I_c$ at long length tape prepared by batch type co-evaporation system called by EDDC. The long length SmBCO coated conductors were developed on $LaMnO_3/IBAD-MgO/Y_2O_3/Al_2O_3$/Hastelloy C276 template. The distribution of $I_c$ are from 0 to 397 A/cm at 77 K and self field. We have studied the microstructures of these films by using SEM, EDS and X-ray diffraction. The XRD and composition by EDS results of SmBCO film reveals subtle difference. But, the microscopic observation by SEM show the microcrack at the sample with low $I_c$.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.307-312
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• 2008

In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water ($DIO_3$). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than $200\;{\AA}$ remained after only a commercial dewaxer treatment. A $DIO_3$ treatment in place of a dewaxer showed a low removal rate on a thick wax layer of $8000\;{\AA}$ due to the diffusion-limited reaction of ozone. A dewaxer was combined with a $DIO_3$ rinse to reduce the wax removal time and remove wax residue completely. Replacing DI rinse with the $DIO_3$ rinse resulted in a surface with a contact angle of less than $5^{\circ}$, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the $DIO_3$ rinsing process. A reduction in the process time was obtained by introducing $DIO_3$ cleaning with a dewaxing process.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.452-456
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• 2009

In high-efficiency Cu(In,Ga)$Se_2$ solar cells, Na is doped into a Cu(In,Ga)$Se_2$ light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)$Se_2$ absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of $10^3{\Omega}{\cdot}cm$ indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.434-442
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• 2014

Serious environmental problems have been caused by the greenhouse effect due to carbon dioxide($CO_2$) or nitrogen oxides($NO_x$) generated by the use of fossil fuels, including oil and liquefied natural gas. Many countries, including our own, the United States, those of the European Union and other developed countries around the world; have shown growing interest in clean energy, and have been concentrating on the development of new energy-saving materials and devices. Typical non-fossil-fuel sources include solar cells, wind power, tidal power, nuclear power, and fuel cells. In particular, organic solar cells(OSCs) have relatively low power-conversion efficiency(PCE) in comparison with inorganic(silicon) based solar cells, compound semiconductor solar cells and the CIGS [$Cu(In_{1-x}Ga_x)Se_2$] thin film solar cells. Recently, organic cell efficiencies greater than 10 % have been obtained by means of the development of new organic semiconducting materials, which feature improvements in crystalline properties, as well as in the quantum-dot nano-structure of the active layers. In this paper, a brief overview of solar cells in general is presented. In particular, the current development status of the next-generation OSCs including their operation principle, device-manufacturing processes, and improvements in the PCE are described.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.705-705
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• 2013

CIGS 박막태양 전지는 I-III-VI Chalcopyrite 결정구조를 가진 화합물 반도체 태양전지로 인위적인 밴드갭 조작을 통하여 효율 향상에 용이하다. 4원소 화합물인 CIGS 광흡수층의 대표적인제조 방법으로는 co-evaporation 공정법이 있다. 동시 증발법은 CIGS 결정을 최적화하기 위하여 박막이 증착되는 동안 기판의 온도를 3단계로 변화시켜주는 3-stage 공정을 통하여 제작된다. 일반적으로 CIGS 박막태양전지는 전면전극으로 투명전도막이 사용되며 높은 광투과성과 전기전도성을 가져야 한다. 투명전도막의 광학적, 전기적 특성은 CIGS 박막태양전지의 효율에 영향을 미치기 때문에 최적화된 조건이 요구된다. 본 연구에서는 CIGS 광흡수층은 Ga/(In+Ga)=0.31, Cu/(In+Ga)=0.86으로 최적화 시켰으며, 투명전도막은 Ga이 도핑된 ZnO박막을 RF 마그네트론 스퍼터링법을 이용하여 증착하였다. CIGS 박막 태양전지 직렬저항 성분인 투명 전도막의 비저항이 $4.46{\times}{\square}10{\square}-3{\square}$(${\Omega}$-cm)에서 $9.3{\times}{\square}0{\square}-4{\square}$(${\Omega}$-cm) 으로 변화함에 따라 Efficiency가 9.67%에서 16.47%으로 증가하였으며, Voc가 508 mV에서 596 mV으로, Jsc가 29.27 mA/$cm^2$에서 37.84 mA/$cm^2$으로, FF factor가 64.99%에서 72.96%로 증가하였다. 이에 따른 투명 전도막의 전기적, 광학적 특성을 통해 CIGS 박막태양전지에 미치는 영향에 대해 조사하였다.

• Membrane Journal
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• v.17 no.4
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• pp.345-351
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• 2007

In this research, by using the fluorine gas, the poly(ether sulfone) (PES), the polysulfone (PSf), and the poly-vinylidenefluoride (PVDF) membranes were modified to improve the performance of the optional Gas-Liquid Contactor The SEM, surface contact angle, XPS, and the water transmission minimum pressure test was performed in order to examine the characteristics of which is surface modified. As a result of looking into the surface morphology of from the SEM measurement, we could know that the roughness of the membrane surface increased as the fluorine processing time increased. $-CH_2$, and the perfluoro group of $-CH_3$ were chemically combined with the surface fluorine conversion film surface and the hydrophobicity was exposed to be increased. Moreover, we could know that as the surface fluorinated processing time increased from the surface contact angle and water transmission minimum pressure test, the measured value increased and the overall characteristics were improved.

• The Journal of Korean Society for Radiation Therapy
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• v.7 no.1
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• pp.32-44
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• 1995

I. 제 목 고에너지 X-선 소조사야의 선량분포 및 계측에 관한 연구 II. 연구의 목적 및 중요성 최근 수술이 어려운 뇌종양등에 대한 방사선수술법(Radiosurgery)이 관심의 대상이 되고 있다. 방사선수술법은 크게 나누어 200여개의 Co-60이 장착된 장치(Gamma Knife)를 이용하는 방법과, X-선치료기를 이용하는 방법은 몇개의 보조기구를 설치하면 가능한 매우 경제적인 방법이다. 따라서 Microtron을 이용한 방사선수술의 기초자료확보를 위하여 소조사야에 대한 선량과 선량분포의 측정 및 계산을 실시하였다. III. 연구의 내용 및 범위 Microtron으로부터 조사되는 6MV, 10MV, 21MV X-선의 지름 3cm이하 소조사야에 대한 정확한 선량 및 선량분포 자료를 확보하기 위해, 가. Microtron치료기와 보조장치등에 대한 정밀도 계측 및 평가 나. 보조 Collimator의 적당한 크기와 재료의 선택 및 설계, 제작. 다. 에너지와 조사야 크기 각각에 대한 여러측정장치(Ion chamber, Diode detector, TLD 및 Film등)를 이용한 선량 및 선량분포 측정. 라. 측정값들의 비교, 검토 및 측정된 자료에 의한 선량 및 선량분포의 계산을 수행했다. IV. 연구결과 및 활용에 대한 건의 본 연구에서 얻은 결과는 다음과 같다. 가. Microtron치료기와 보조장치등의 정확도의 허용 오차범위내에서 잘 일치하였다. 나. 보조 collimater adpator는 총 길이 24cm로 하였으며 재질로는 두랄미늄을 사용하였고, 보조 collimator는 low melting alloy를 사용하였으며 소조사야 크기의 정확도는 0.5mm이내에서 매우 잘 일치 하였다. 다. 방사선 수술법의 에너지 선택에 중요한 요소중의 하나인 penumbra는 6MV X-선에서 가장 적게 나타났으며 라. 소조사면에 대한 깊이-선량 백분율곡선은 모든 에너지에서 조사면이 작아질수록 표면으로 이동하는 경향을 보였다. 이상의 결과로부터 방사선 수술을 시행할 경우 수십억원에 이르는 장비의 도입이나 새로운 시설 없이 Microtron에서 조사되는 고에너지 X-선을 이용할 수 있을 것으로 사료된다. 또한 새로 구입한 측정기나 보조 Collimator를 이용하여 소조사야에 대한 선량측정기술을 습득함으로써 일반적인 소조사야의 방사선치료나 회전치료등에 활용할 수 있다.