• Current Photovoltaic Research
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• v.3 no.3
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• Economic and Environmental Geology
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• v.27 no.4
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• pp.335-343
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• 1994

The Eonyang amethyst deposits are composed of vug quartz emplaced in the Eonyang granites of Mesozoic Cretaceous age. The Eonyang granites are composed of biotite granite, porphyritic biotite granite, aplite and miarolitic granite. The petrochemical data of the Eonyang granites show the trend of subalkaline magma, calc-alkaline magma, I-type granitoid and magnetite series. The vug quartz show the characteristic growth zoning (white quartz-smoky quartz-amethyst) from wall side. Generally fluid inclusions in the vug quartz can be divided into four main types based on compositions (I-type: gas inclusion, II-type: liquid inclusion, III-type: polyphase inclusion, IV-type: liquid $CO_2$-bearing inclusion). Solid phase of polyphase inclusions are halite(NaCl), sylvite(KCl), hematite ($Fe_2O_3$) and unknown anisotropic solid. Homogenization temperatures inferred from the fluid inclusion study ranges from $440^{\circ}C$ to $485^{\circ}C$ in white quartz, from $227^{\circ}C$ to $384^{\circ}C$ in smoky quartz, from $133^{\circ}C$ to $186^{\circ}C$ in amethyst, respectively. Salinities of fluid inclusions in each mineralization stages ranges from 40 wt.% to 58 wt.% in white and smoky quartz, from 1.0 wt.% to 8.7 wt.% in amethyst respectively. A consideration of the pressure regime during vug quartz deposition based on the boiling evidence suggests lithostatic pressure of less than 72 bars. This range of pressure indicate that vug quartz lay at depth of 750 m below the surface at the during mineralization.

• Analytical Science and Technology
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• v.29 no.6
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• pp.269-276
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• 2016

Gosan-ri site is known as the early Neolithic cultural heritage, in which an archaic plainware, called as the Gosan-ri-type pottery, was excavated regarding as the first pottery manufactured in Korea. In this study, OSL dating was carried out to five soil layer samples collected in stratigraphic cross-section for evaluating the formation and occupation of the Gosan-ri site. Paleodose of each soil sample was calculated using the single aliquot regenerative dose (SAR) method with preheat of $220^{\circ}C$ and finally determined using maximum age model, considering its deposition process. The OSL age was determined from the ratio of paleodose to annual dose rate. From the resultant OSL ages and the related 14C dates, it was concluded that the Gosan-ri site was formed after 9,000 BC and a variety of cultural feature including the Gosan-ri-type pottery were occupied ranging from the early Neolithic to the middle of 4,000 BC. Finally, the Gosan-ri site was discarded in the middle of 4,000 BC and has been arrived at present through natural deposits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.58.2-58.2
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• 2012

Heavy hydrocarbon reforming is a core technology for "Dirty energy smart". Heavy hydrocarbons are components of fossil fuels, biomass, coke oven gas and etc. Heavy hydrocarbon reforming converts the fuels into $H_2$-rich syngas. And then $H_2$-rich syngas is used for the production of electricity, synthetic fuels and petrochemicals. Energy can be used efficiently and obtained from various sources by using $H_2$-rich syngas from heavy hydrocarbon reforming. Especially, the key point of "Dirty energy smart" is using "dirty fuel" which is wasted in an inefficient way. New energy conversion laboratory of KAIST has been researched diesel reforming for solid oxide fuel cell (SOFC) as a part of "Dirty energy smart". Diesel is heavy hydrocarbon fuels which has higher carbon number than natural gas, kerosene and gasoline. Diesel reforming has difficulties due to the evaporation of fuels and coke formation. Nevertheless, diesel reforming technology is directly applied to "Dirty fuel" because diesel has the similar chemical properties with "Dirty fuel". On the other hand, SOFC has advantages on high efficiency and wasted heat recovery. Nippon oil Co. of Japan recently commercializes 700We class SOFC system using city gas. Considering the market situation, the development of diesel reformer has a great ripple effect. SOFC system can be applied to auxiliary power unit and distributed power generation. In addition, "Dirty energy smart" can be realized by applying diesel reforming technology to "Dirty fuel". As well as material developments, multidirectional approaches are required to reform heavy hydrocarbon fuels and use $H_2$-rich gas in SOFC. Gd doped ceria (CGO, $Ce_{1-x}Gd_xO_{2-y}$) has been researched for not only electrolyte materials but also catalysts supports. In addition, catalysts infiltrated electrode over porous $La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_3-{\delta}$ and catalyst deposition at three phase boundary are being investigated to improve the performance of SOFC. On the other hand, nozzle for diesel atomization and post-reforming for light-hydrocarbons removal are examples of solving material problems in multidirectional approaches. Likewise, multidirectional approaches are necessary to realize "Dirty energy smart" like reforming "Dirty fuel" for SOFC.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.11-14
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• 2007

For the fabrication of blue color organic light emitting diodes(OLED) with a high performance, 2-TNATA [4,4',4"-tris (2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB [N,N'-bis (1-naphthyl) -N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by the vacuum thermal evaporation. After then, blue color emission layer was deposited using TPM-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl)phosphonate] and GDI602 as a light emitting organic material. Finally, the two kinds of OLEDs with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al and ITO/2-TNATA/NPB/GDI602/Alq_3/LiF/Al$ were prepared by in-situ deposition. The maximum current density and luminance were found to be about $588\;mA/cm^2\;and\;5239\;cd/m^2$ at 12V for the OLED sample with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al$. Color coordinate of blue OLED was x=0.18, y=0.18 (at llV) and the maximum current efficiency was 2.82 cd/A (at 6V) with the peak emission wavelength of 440 nm.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.202-210
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• 2001

Spin dependent tunneling (SDT) junction devices of Ta/NiFe/Ta/NiFe/FeMn/NiFe/AlOx/CoFe/NiFe/Al with in-situ naturally oxidized Al barrier were fabricated using ion beam deposition and dc sputtering in UHV chamber of 10$^{-9}$ Torr. The maximum tunneling magnetoresistance (TMR) and the product resistance by junction (R$_{j}$ A) are 16-17% and 50-60 $\Omega$${\mu}{\textrm}{m}$$^2$, respectively. The values of TMR and (R$_{j}$ A) with field annealing were slightly increased. The TMR and (R$_{j}$ A) dependence versus the junction area size was observed. These results were explained by using sheet resistance effect of bottom electrode and spin channel effects.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.104-104
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• 2016

음극아크증착과 스퍼터링을 동시에 사용한 하이브리드 공정으로 제조된 TiAlSiN 코팅층의 물성을 평가하였다. TiAlSiN 코팅층은 음극아크 소스에 Ti-Al 타겟을 장착하고 스퍼터링 소스에는 Si 타겟을 장착하여 아르곤과 질소 가스의 혼합가스 분위기에서 스테인리스(SUS304)와 초경(cemented carbide; WC-15wt.%Co) 기판 위에 제조되었다. 음극아크 소스에 인가되는 전류는 고정하고 스퍼터링 소스에 인가되는 전력을 조절하여 TiAlSiN 코팅층의 Si 함량을 제어하였다. TiAlSiN 코팅층의 Si 함량이 증가하면 코팅층의 구조가 주상정에서 비정질 구조로 변화한다. 이는 Si 함량이 증가하면 코팅층에 형성되는 알갱이 구조의 크기가 줄어들기 때문이다. X-선 회절 결과와 Scherrer's equation을 이용하여 Si 함량에 따른 알갱이 구조의 크기를 계산하면 Si이 없는 코팅층은 약 14 nm의 크기를 보이며 8 at.% 이상의 함량에서 약 2.5 nm로 포화된다. TiAlSiN 코팅층의 경도를 Si 함량에 따라 측정하면 Si 함량이 증가하면 경도도 증가하는 경향을 보이며 약 9 at.%의 Si 함량에서 3200 Hv로 최대가 되고 이후에는 감소한다. TiAlSiN이 코팅된 스테인리스 시편을 대기에서 열처리하고 시편 무게증가를 측정하여 코팅층의 내열성을 평가하였다. Si 함량이 증가하면 내열성도 향상되는데 14.4 at.%의 Si 함량에서 $700^{\circ}C$까지 무게 증가가 없으며 $900^{\circ}C$까지 0.43 mg의 증가를 보인다. 본 실험을 통해서 얻어진 TiAlSiN 코팅층은 비교적 높은 경도와 내열성을 확보하여 절상공구 보호막 코팅 소재 등으로 활용이 가능할 것으로 판단된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.145-152
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• 2015

In this work, we were investigated the effect of the additive gases on the relationship between bonding structure and mechanical properties of the deposited films when the DLC films were deposited on Si-wafer by the rf-PECVD method with the addition of small amounts of carbon dioxide and nitrogen to the mixture gas of methane and hydrogen. The deposition rate of the films increased as the rf-power increased, while it decreased with increasing the amount of additive gases. Also, as the carbon dioxide gas increased, the hydrogen content in the films decreased but the $sp^3/sp^2$ ratio of the films increased. In case of nitrogen gas, the hydrogen content decreased, however the $sp^3/sp^2$ ratio and nitrogen gas flow rate did not show a specific tendency.

• Carbon letters
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• v.8 no.2
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• pp.108-114
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• 2007

In this work, activated carbon (AC) after $HNO_3$ modification was used as the support during the production of supported $TiO_2$ to increase the high deposition efficiency and the photocatalytic activity. The results of $N_2$ adsorption showed that the BET surface area of samples decreased with an increasing of the concentration of $HNO_3$ due to the penetration of $TiO_2$. From XRD data, a single crystal structure of anatase peak was observed in diffraction patterns for the AC coated with titanium complexes. From the SEM results, almost all particles were aggregated with each other at the carbon surface and AC was covered with $TiO_2$ particles in all of the samples. The EDX spectra show the presence of C, O, Ti and other elements. It was also observed a decreasing of amount of C content with increasing Ti and O content from the EDX. The results of FT-IR revealed that the modified AC contained more surface oxygen bearing groups than that of the original AC. The effect of surface acidity and basity calculated from Boehm titration method was also evaluated from correlations as a function of NaOH, $NaHCO_3$, and $Na_2CO_3$ uptake. The surface modification of AC by $HNO_3$ leads to an increase in the catalytic efficiency of AC/$TiO_2$ catalysts, and the catalytic efficiency increases with increasing of $HNO_3$ concentration.