• 제목/요약/키워드: Cleaning solution

검색결과 326건 처리시간 0.024초

OLED공정에서 사용되는 섀도마스크의 습식 세정 후 세정표면 및 세정용액 분석에 관한 연구 (Analysis of Post Cleaning Solution After Wet Cleaning of Shadow Mask Used in OLED Process)

  • 최은화;표성규
    • 마이크로전자및패키징학회지
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    • 제23권4호
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    • pp.7-10
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    • 2016
  • The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently.

연소로 효율증진을 위한 on-line 세정 방법에 관한 연구 (A Study of On-line Cleaning Method for Increasing Efficiency in a Combustor)

  • 장현태;한승동;박태성;차왕석
    • 한국산학기술학회논문지
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    • 제11권3호
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    • pp.1016-1022
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    • 2010
  • 액상 중유 연료를 사용하는 고용량 증기 보일러에서 발생되어 연소기기 내부에 침적되는 슈트, 슬래그, 크랭커, 회분, 산화물의 on-line 세정을 위한 세정제 제조에 대한 연구를 수행하였다. 액상 중유 연료를 사용하는 보일러 및 가열로에 생성되는 슈트, 슬래그, 크랭커, 회분, 산화물을 제거하는 기존 기술은 보일러 및 가열로의 가동 중단 후 작업자들에 의한 기계적인 처리를 통하여 침적물을 제거하는 기술을 사용하고 있다. 기존 기술을 대치할 수 있고 보일러의 중단이 없는 상태에서 침적물을 세정할 수 있는 세정제의 최적 조성을 도출하였다. 질산암모늄과 질산마그네슘의 혼합물이 주 세정제로 도출되었으며, 각종 전이금속 화합물에 의한 영향을 영향을 연구하여, 세정에 의한 부식을 방지할 수 있으며, 연소효율의 증대를 얻을 수 있는 전이금속화합불 첨가제를 도출하였다.

세정액에 따른 실리콘 웨이퍼의 Cu 및 Fe 불순물 제거 (Removal of Cu and Fe Impurities on Silicon Wafers from Cleaning Solutions)

  • 김인정;배소익
    • 한국재료학회지
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    • 제16권2호
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    • pp.80-84
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    • 2006
  • The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on $NH_4OH/H_2O_2/H_2O\;(SC1),\;H_2O_2/HCl/H_2O$ (SC2), and/or HCl/$H_2O$ (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When $H_2O_2$ was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.

Fabrication of Ozone Bubble Cleaning System and its Application to Clean Silicon Wafers of a Solar Cell

  • Yoon, J.K.;Lee, Sang Heon
    • Journal of Electrical Engineering and Technology
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    • 제10권1호
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    • pp.295-298
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    • 2015
  • Ozone micro-bubble cleaning system was designed, and made to develop a unique technique to clean wafers by using ozone micro-bubbles. The ozone micro-bubble cleaning system consisted of loading, cleaning, rinsing, drying and un-loading zones, respectively. In case of the cleaning the silicon wafers of a solar cell, more than 99 % of cleaning efficiency was obtained by dipping the wafers at 10 ppm of ozone for 10 minutes. Both of long cleaning time and high ozone concentration in the wet-solution with ozone micro-bubbles reduced cleaning efficiency because of the re-sorption of debris. The cleaning technique by ozone micro-bubbles can be also applied to various wafers for an ingot and LED as an eco-friendly method.

고온화학세정환경에서 20 % EDTA 용액이 결함 전열관 (Alloy600)에 미치는 영향 (Effect of 20 % EDTA Aqueous Solution on Defective Tubes (Alloy600) in High Temperature Chemical Cleaning Environments)

  • 권혁철
    • Corrosion Science and Technology
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    • 제15권2호
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    • pp.84-91
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    • 2016
  • The transport and deposition of corrosion products in pressurized water nuclear reactor (PWR) steam generators have led to corrosion (SCC, denting etc.) problems. Lancing, mechanical cleaning and chemical cleaning have been used to reduce these problems. The methods of lancing and mechanical cleaning have limitations in removing corrosion products due to the structure of steam generator tubes. But high temperature chemical cleaning (HTCC) with EDTA is the most effective method to remove corrosion products regardless of the structure. However, EDTA in chemical cleaning aqueous solution and chemical cleaning environments affects the integrity of materials used in steam generators. The nuclear power plants have to perform the pre-test (also called as qualification test (QT)) that confirms the effect on the integrity of materials after HTCC. This is one of the series studies that assess the effect, and this study determines the effects of 20 % EDTA aqueous solution on defective tubes in high temperature chemical cleaning environments. The depth and magnitude of defects in steam generator (SG) tubes were measured by eddy current test (ECT) signals. Surface analysis and magnitude of defects were performed by using SEM/EDS. Corrosion rate was assessed by weight loss of specimens. The ECT signals (potential and depth %) of defective tubes increased marginally. But the lengths of defects, oxides on the surface and weights of specimens did not change. The average corrosion rate of standard corrosion specimens was negligible. But the surfaces on specimens showed traces of etching. The depth of etching showed a range on the nanometer. After comprehensive evaluation of all the results, it is concluded that 20 % EDTA aqueous solution in high temperature chemical cleaning environments does not have a negative effect on defective tubes.

Chemical cleaning effects on properties and separation efficiency of an RO membrane

  • Tu, Kha L.;Chivas, Allan R.;Nghiem, Long D.
    • Membrane and Water Treatment
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    • 제6권2호
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    • pp.141-160
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    • 2015
  • This study aims to investigate the impacts of chemical cleaning on the performance of a reverse osmosis membrane. Chemicals used for simulating membrane cleaning include a surfactant (sodium dodecyl sulfate, SDS), a chelating agent (ethylenediaminetetraacetic acid, EDTA), and two proprietary cleaning formulations namely MC3 and MC11. The impact of sequential exposure to multiple membrane cleaning solutions was also examined. Water permeability and the rejection of boron and sodium were investigated under various water fluxes, temperatures and feedwater pH. Changes in the membrane performance were systematically explained based on the changes in the charge density, hydrophobicity and chemical structure of the membrane surface. The experimental results show that membrane cleaning can significantly alter the hydrophobicity and water permeability of the membrane; however, its impacts on the rejections of boron and sodium are marginal. Although the presence of surfactant or chelating agent may cause decreases in the rejection, solution pH is the key factor responsible for the loss of membrane separation and changes in the surface properties. The impact of solution pH on the water permeability can be reversed by applying a subsequent cleaning with the opposite pH condition. Nevertheless, the impacts of solution pH on boron and sodium rejections are irreversible in most cases.

계면활성제가 첨가된 DHF의 Post-Oxide CMP 세정 공정에의 적용 연구 (Application of Surfactant added DHF to Post Oxide CMP Cleaning Process)

  • 류청;김유혁
    • 대한화학회지
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    • 제47권6호
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    • pp.608-613
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    • 2003
  • Post-Oxide CMP(Chemical-Mechanical Polishing) 결과 실리콘 웨이퍼를 오염 시키고 있는 슬러리 입자의 세정 가능성을 조사하기 위하여DHF(Diluted HF)에 비이온성 계면 활성제인 PAAE(Polyoxyethylene Alkyl Aryl Ether), 비양성자성 용제인 DMSO(Dimethylsulfoxide) 와 초순수의 혼합물인 새로운 세정액을 제조하였다. 세정력을 평가하기 위해서 세정제 내에서 각각 다른 제타 포텐셜을 갖는 실리카($SiO_2$), 알루미나($Al_2O_3$)와 PSL(polystylene latex) 입자를 실리콘 웨이퍼 표면의 산화막에 인위적으로 오염시킨 후 실험에 이용하였다. 초음파하에서 세정액의 성능 평가 결과 본 세정기술은 효과적인 입자의 세정능력과 금속이온에 대한 세정 능력을 나타내고 있음을 확인하였다. 즉 기존의 APM($NH_4OH,\;H_2O_2$와 D.I.W의 혼합물)과 달리 상온에서 세정이 가능하고 세정과정이 단축 되었으며, 낮은 농도의 HF를 사용함으로써 최소의 에칭에 의하여 표면 거칠기를 감소시킬 수 있음을 보여주고 있다. 또한 주요 CMP 금속 배선 물질들에 대한 낮은 부식력으로 기존의 CMP 후 세정공정에 뿐만 아니라 차세대CMP 공정으로 각광 받고 있는 Copper CMP 에 대한 Brush 세정 공정의 보조 세정제로 본 세정제가 적용될 가능성이 있음을 확인하였다.

Enzymatic Cleaning of Ultrafiltration Membrane Fouled with a Semi-synthetic Type Cutting Oil

  • Chung, Kun-Yong;Lee, Jeung-Bok;Chang, Pahn-Shick
    • Korean Membrane Journal
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    • 제2권1호
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    • pp.60-63
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    • 2000
  • The effect of Candida rugosa and steapsin lipase cleaning was investigated for ultrafiltration polyethersulphone membrane (30,000 dalton MWCO) fouled with the semi-synthetic type cutting oil. The experimental by the water circulator. The enzyme cleaning effect was measured with respect to temperature, cleaning time and enzyme concentration. The optimum cleaning condition for the system was 25$^{\circ}C$ and 2 hour cleaning with 1,000 unites/mL steapsin solution. The pure water flux improvement by the steapsin solution cleaning was about 17% at the optimum cleaning condition.

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아민과 카르복실산이 함유된 수계용액의 구리 배선 공정의 세정특성 (Cleaning Behavior of Aqueous Solution Containing Amine or Carboxylic Acid in Cu-interconnection Process)

  • 고천광;이원규
    • Korean Chemical Engineering Research
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    • 제59권4호
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    • pp.632-638
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    • 2021
  • 반도체 공정에서 구리 배선 공정의 도입에 따라 플라즈마 식각에 의해 배선의 형성과정에서 구리 산화물, 불화물 및 불화탄소 등을 포함한 복합 잔류물을 형성하게 된다. 본 연구에서는 아민기(-NH2)와 카르복실기(-COOH)를 갖는 성분으로 세정액을 제조하여 구리 배선 공정에서의 식각 잔류물 제거 특성을 분석하였다. 아민기를 포함한 세정액은 질소에 치환된 성분 및 탄소결합의 길이에 따라 세정효과에 차이를 보이며, 세정액의 pH가 증가함에 따라 구리 산화물의 식각 속도가 증가하는 경향성을 보였다. 아민기의 활성은 염기성 영역에서, 카르복실기의 활성은 산성 영역에서 이루어지며, 각각의 영역에서 구리 또는 구리 산화물과의 complex 형성을 통하여 세정공정이 진행되었다.