• 한국정밀공학회지
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• 제25권9호
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• pp.109-115
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• 2008

The cleaning process of contaminant particles adhering to the microchips, integrated circuits (ICs) or the like is essential in modern microelectronics industry. In the cleaning process particularly working with the application of inert gases, the removal of contaminant particles of submicron scale is very difficult because the particles are prone to reside inside the boundary layer of the working fluid, The use of cryogenic $CO_2$ cleaning method is increasing rapidly as an alternative to solve this problem. In contrast to the merits of high efficiency of this process in the removal of minute particles compared to the others, even fundamental parametric studies for the optimal process design in this cleaning process are hardly done up to date, In this study, we attempted to measure the cleaning efficiency with the variations of some principal parameters such as mass flow rate, injection distance and angle, and tried to draw out optimal cleaning conditions by measuring and evaluating an effective cleaning width called $d_{50}$.

• 청정기술
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• 제12권1호
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• pp.1-9
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• 2006

산업세정제 중에서 환경친화적이라 대체 세정제로 유망한 수계세정제를 배합하고 임의 세정성을 평가하였다. 수계세정제 배합시 EO부가 몰수가 3, 5, 7인 primary alcohol ethoxylate계열의 비이온계면활성제를 주계면활성제(S)로 하고 음이온계면활성제, 알코올류 등을 보조계면활성제(A)로 하여 수계세정제를 배합하였고, 이들 배합비(A/S)에 따른 절삭유와 그리스의 혼합오염물에 대한 세정성을 평가하였다. 또한 builder인 NaOH, KOH, $Na_2CO_3$, $NaHCO_3$를 첨가하여 세정효율 향상을 평가하였다. 세정성 평가 실험결과 보조계면활성제로는 음이온계면활성제인 Triethanolamine Lauryl Sulfate(TLS) 사용 시에 가장 세정효율이 좋았고, builder로는 NaOH, $Na_2CO_3$가 우수한 세정효율을 보여주었다.

• 한국인쇄학회지
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• 제15권2호
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• pp.1-4
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• 1997

Existing cleaning solvent using screen printing are the organic solvents including aromatic compounds carried with poisonous and stench. besides, Cleaning method of current screen printing are for the most part mixed cleaning method of dipping and polish. Using 1,1,1-TCE, CFC-113 alternative system cleaning solvent be substituted for existing cleaning solvent against screen printing ink measured the cleaning efficiency according to gravimetric analysis method and property change of gassamer according to Image Analyzer. Also, Cleaning process system carry with excellent cleaning efficiency studied which was proposed new cleaning process including ultrasonic cleaning process be substituted for existing mixed cleaning method of dipping and polish.

• 청정기술
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• 제13권2호
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• pp.143-150
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• 2007

본 연구에서는 플러스, 솔더, 그리스와 같은 오염물질을 효과적으로 세정하기 위하여 글리콜 에테르계, 파라핀계 및 실록산계 물질을 배합한 탄화수소계 세정제를 제조하고 습윤지수, 아닐린점 그리고 용해도 매개변수 등의 세정성능에 대한 영향을 조사하였다. 탄화수소계 세정제의 배합은 단일물질의 물성에 기초하여 제조되었다. 제조된 세정제의 습윤지수와 아닐린 점은 실험을 통하여 측정하였으며 용해도 매개변수는 Hansen의 추정식을 사용하여 계산하였다. 본 연구에서는 플럭스, 솔더, 그리스의 오염물을 사용하여 세정제의 세정성능 평가를 진행하였다. 실험결과 배합 세정제의 세정성능이 플럭스, 솔더, 그리스의 오염물 세정에 매우 우수하게 나타났으며 오염물에 따라 세정효율에 영향을 미치는 변수가 다르게 나타났다. 플럭스 세정에서는 플럭스($21.3MPa^{1/2}$)와 유사한 용해도 매개변수의 MC($20.3MPa^{1/2}$), DF-1($24.2MPa^{1/2}$), DF-2($21.5MPa^{1/2}$)세정제가 3분 이내에 100%의 세정효율을 보였다. 그리고 솔더 세정에서는 -$20^{\circ}C$ 이하의 아닐린점인 CFC-113, MC, 1,1,1-TCE가 높은 세정효율을 보였다. 그리스 세정에서는 그리스의 용해도 매개변수($15.0{\sim}17.0\;MPa^{1/2}$)와 가장 유사한 DG-1 세정제($16.2\;MPa^{1/2}$)와 DG-2 세정제($15.5\;MPa^{1/2}$)의 세정효율이 비교적 저조하였고 습윤지수가 크고 아닐린 점이 낮은 CFC-113과 MC가 세정효율이 우수하였다. 본 연구를 통해 플럭스, 솔더, 그리스의 오염물을 세정하기 위해 글리콜 에테르계, 파라핀계 및 실록산계 물질을 알맞게 배합하여 CFC-113, MC, 1,1,1-TCE와 같은 규제물질을 대체할 수 있는 탄화수소계 세정제를 개발할 수 있었다. 그리고 습유지수, 아닐린점, 용해도 매개변수 등과 같은 세정성 영향을 검토하여 비수계 세정제의 세정성능을 예측하고 세정제의 배합에 적용할 수 있었다.

• 한국정밀공학회지
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• 제31권12호
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• pp.1107-1113
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• 2014

In this article, the megasonic cleaning system for cleaning micro/nano particles from flat panel display (FPD) surfaces was developed. A piezoelectric actuator and a waveguide were designed by finite element method (FEM) analysis. The calculated peak frequency value of the quartz waveguide was 1002 kHz, which agreed well with the measured value of 1003 kHz. The average acoustic pressure of the megasonic cleaning system was 43.1 kPa, which is three times greater than that of the conventional type of 13.9 kPa. Particle removal efficiency (PRE) tests were performed, and the cleaning efficiency of the developed system was proven to be 99%. The power consumption of the developed system was 64% lower than that of the commercial system. These results show that the developed megasonic cleaning system can be an effective solution in particle removing from FPD substrate with higher energy efficiency and lower chemical and ultra pure water (UPW) consumption.

• 청정기술
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• 제7권3호
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• pp.203-214
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• 2001

플라즈마를 발생시키는 반응기체의 종류에 따라 실리콘 산화막 세정에 어떠한 영향을 미치는지에 대해 연구하였다. 압력 (100 mTorr), 전력 (300 W, 500 W), 전극간 거리 (5, 8, 11.5 cm), 세정시간 (90초, 180초), 가스유량 (50sccm) 등의 변수들을 고정시키고 $CHF_3$, $CF_4$, 아르곤, 산소 등의 세정가스를 변화시키며 세정성능을 비교하였다. 세정결과 아르곤 플라즈마는 단지 물리적인 스퍼터링 효과만으로 세정속도가 느렸다. 산소 플라즈마는 5cm 전극거리, 300W, 180초 세정시 좋은 세정효과를 내었으나, 표면거칠기가 증가하였다. $CF_4$ 플라즈마의 경우 가장 좋은 세정효과를 얻었다. $CHF_3$ 플라즈마는 CFx/F의 비율을 낮출 수 있는 첨가기체가 필요함을 알 수 있었다. $CHF_3$에 아르곤을 첨가하였을 경우에는 원활한 세정효과를 얻을 수 없었으나, 산소를 첨가하였을 경우 좋은 세정효과를 얻을 수 있었다.

• 한국재료학회지
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• 제16권2호
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• pp.75-79
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• 2006

The effect of ozone and/or ultrasound treatments on the efficiency of slurry removal in post sliced cleaning (PSC) of silicon ingot was studied. Efficiency of slurry removal was evaluated as functions of time, temperature and surfactant with DOE (Design of Experiment) method. Residual slurries were observed on the wafer surface in case of cleaning by ozone or ultrasound separately. However, a clean wafer surface was appeared when cleaned with ozone and ultrasound simultaneously. It has found that cleaning time was the main effect among temperature, time and surfactant. Elevated temperature, addition of surfactant and high ozone concentration helped to accelerate efficient removal of slurry. The improvement of removal efficiency seems to be related to the formation of more active OH radicals. The highly cleaned surface was achieved at 10 wt% ozone, 1 min and 10 vol% surfactant with ultrasound. Application of ozone and ultrasound might be a useful method for PSC process in wafer cleaning.

• Tribology and Lubricants
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• 제31권6호
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• pp.239-244
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• 2015

Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

• Journal of Electrical Engineering and Technology
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• 제10권1호
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• pp.295-298
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• 2015

Ozone micro-bubble cleaning system was designed, and made to develop a unique technique to clean wafers by using ozone micro-bubbles. The ozone micro-bubble cleaning system consisted of loading, cleaning, rinsing, drying and un-loading zones, respectively. In case of the cleaning the silicon wafers of a solar cell, more than 99 % of cleaning efficiency was obtained by dipping the wafers at 10 ppm of ozone for 10 minutes. Both of long cleaning time and high ozone concentration in the wet-solution with ozone micro-bubbles reduced cleaning efficiency because of the re-sorption of debris. The cleaning technique by ozone micro-bubbles can be also applied to various wafers for an ingot and LED as an eco-friendly method.

• 한국인쇄학회지
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• 제15권1호
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• pp.57-69
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• 1997

The field of printing to use pressurized ink using screen gossamer that is called screen printing. Existing cleaning solvents for the screen printing are the organic solvents containing aromatic compounds and stench. Also, Cleaning method of screen printing are for the most part mixed cleaning method of dipping and polish. In this study, we measured the cleaning efficiency by gravimetric analysis and the property change of gossamer by image analyzer using existing cleaning solvent. Also, we investigated a new cleaning process showing excellent cleaning efficiency using the ultrasonic and vibration cleaning method instead of the exsiting mixed cleaning method.