• Journal of Korean Society of Water and Wastewater
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• v.30 no.5
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• pp.605-612
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• 2016

Membrane bioreactors (MBRs) employ a process of biological treatment that is based on a membrane that has the advantages of producing high-quality treated water and possessing a compact footprint. However, despite these advantages, the occurrence of "fouling" during the operation of these reactors causes the difficulty of maintenance. Hence, in this study, three physical cleaning methods, namely, backwashing, air scrubbing, and mechanical cleaning ball was performed to identify optimum operating conditions through laboratory scale experiments, and apply them in a pilot plant. Further, the existing MBR process was compared with these methods, and the field applicability of a combination of these physical cleaning methods was investigated. Consequently, MCB, direct control of cake fouling on the membrane surface was found to be the most effective. Moreover, as a result of operating with combination of the physical cleaning process in a pilot plant, the TMP increasing rate was found to be - 0.00007 MPa/day, which was 185% higher than that obtained using the existing MBR process. Therefore, assuming fouling only by cake filtration, about one year of operation without chemical cleaning is considered to be feasible through the optimization of the physical cleaning methods.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.57-64
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology fur their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electrodes nickel, solder jetting, stud bumping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.51-59
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology for their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electroless nickel, solder jetting, stud humping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. Research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.13 no.6
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• pp.482-489
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• 2001

The present study was conducted to estimate the effect on fouling reduction in tubes of the condenser. It shows in detail how to calculate the fouling factor from the experimental results of refrigeration systems with or without the automatic cleaning system using sponge balls and to predict the variation of the factor with time. It also represents how to calculate the temperature and pressure decrease of the refrigerant vapor in the condenser and the load decrease of the compressor in the refrigeration system by fouling reduction.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.1
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• pp.77-85
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• 2004

To evaluate the effect of plasma cleaning on the soldering reliability the plasma cleaning using Ar-10vol%$H_2$ gas was applied on a UBM(Under Bump Metallization). The UBM consisted of Au/ Cu/ Ni/ Al layers which were deposited on a Si-wafer with 20 nm/ 4 $\mu\textrm{m}$/ 4 $\mu\textrm{m}$/ 0.4 $\mu\textrm{m}$ thickness respectively. Sn-3.5%Ag, Sn-3.5%Ag-0.7%Cu and Sn-37%Pb solder balls sized of 500 $\mu\textrm{m}$ in diameter were used. Solder balls on the UBM were plasma reflowed under Ar-10%$H_2$ plasma (with or without plasma cleaning). They were compared with air reflowed solder balls with flux. The spreading ratios of plasma reflowed solder with plasma cleaning was 20-40% higher than that of plasma reflowed solder without plasma cleaning. The shear strength of plasma reflowed solder with plasma cleaning was about 58-65MPa. It showed 60-80% higher than that of plasma reflowed solder without plasma cleaning and 15-35% higher than that of air reflowed solder. Thus it was believed that plasma cleaning for the UBM using Ar-10vol%$H_2$ gas was considerably effective for the improvement of the strength of solder ball.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.3
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• pp.152-156
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• 2016

Wastewater heat recovery heat pump systems use heated wastewater from public baths or factories as the heat pump's heat source. Generally, this system uses a bare tube evaporator. In the heat transfer process from wastewater to refrigerant, thermal resistance is caused primarily by fouling deposits on the outside surface of tube. Fouling directly increases thermal resistance and decreases heat pump efficiency. Thus, it is desirable to eliminate fouling. In this study, we fabricated a fouling mitigation device using a bubbling fluidized bed with cleaning sponge balls in the wastewater bath. Experimental conditions were as follows: $20^{\circ}C$ cold-water temperature, $40^{\circ}C$ wastewater temperature, 100 L/h cold water flow rate, and $0.161m^2$ heat exchanger surface area. Experimental results showed that the thermal resistance of fouling decreased by 56% with the fluidized bed alone and by 86% with both the fluidized bed and cleaning sponge balls.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.17-21
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• 2008

The electroless plating of copper and tin were investigated for the fabrication of Sn-Cu bump. Copper and tin were electroless plated in series on $20{\mu}m$ diameter copper via to form approximately $10{\mu}m$ height bump. In electroless copper plating, acid cleaning and stabilizer addition promoted the selectivity of bath on the copper via. In electroless tin plating, the coating thickness of tin was less uniform relative to that of electroless copper, however the size of Sn-Cu bump were uniform after reflow process.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.69-74
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• 2015

With difficulties during the cleaning of reflow flux residues due to the decrease of the part size and interconnection pitch in the advanced electronic devices, the need for the no-clean solder paste is increasing. In this study, an epoxy curable solder paste was made with SAC305 solder powder and the curable flux of which the main ingredient is epoxy resin and its reflow solderability, flux residue corrosivity and solder joint mechanical properties was investigated with comparison to the commercial rosin type solder paste. The fillet shape of the cured product around the reflowed solder joint revealed that the curing reaction occurred following the fluxing reaction and solder joint formation. The copper plate solderability test result also revealed that the wettability of the epoxy curable solder paste was comparable to those of the commercial rosin type solder pastes. In the highly accelerated temperature and humidity test, the cured product residue of the curable solder paste showed no corrosion of copper plate. From FT-IR analysis, it was considered to be resulted from the formation of tight bond through epoxy curing reaction. Ball shear, ball pull and die shear tests revealed that the adhesive bonding was formed with the solder surface and the increase of die shear strength of about 15~40% was achieved. It was considered that the epoxy curable solder paste could contribute to the improvement of the package reliability as well as the removal of the flux residue cleaning process.

• Proceedings of the KAIS Fall Conference
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• 2011.12b
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• pp.391-393
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• 2011

본 연구에서는 원자력 발전 및 화력 발전소에서 Turbine 운전 시 열교환기 및 콘덴서에 증기를 응축시 열효율을 높여주기 위해 콘덴서 Tube 내에 이물질 및 스케일을 Sponge Ball을 이용하여 자동으로 제거하는 장치로서 콘덴서 튜브 클리닝 시스템(CTCS)에 사용되고 있는 Screen 재료인 Duplex Stainless Steel UNS S31803의 파손사례에 대해 연구하였다. 파손원인 분석은 스크린의 강도해석, 재료의 화학분석시험, 조직시험 및 점용접부의 신뢰성 시험(Peel-off test)으로 수행되었고 저항용접부의 용접 불량 때문에 발생하였을 확인하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.1
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• pp.603-608
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• 2018

Although the voltage-applied discharge method is most widely used in the semiconductor and display industries, periodic management costs are incurred because the method causes defects due to the absorption of ambient fine dust and causes emitter tip contamination due to the discharge. The emitter tip contamination problem is caused by the accumulation of fine particles in ambient air due to the corona discharge of the ionizer. Fuzzy ball generation accelerates the wear of the emitter tip and deteriorates the performance of the ionizer. Although a mechanical cleaning method using a manual brush or an automatic brush is effective for contaminant removal, it requires management of additional mechanical parts by the user. In some cases, contaminants accumulated in the emitter may be transferred to the wafer or product. In order to solve this problem, we developed an ionizer for a clean environment that can remove the pencil-type emitter tip and directly ionize the surrounding gas molecules using the tungsten wire located inside the ion tank. As a result of testing and certification by the Korea Institute of Machinery and Materials, the average concentration was $0.7572particles/ft^3$, the decay time was less than two seconds, and the ion valance was 7.6 V, which is satisfactory.