• Journal of Power Electronics
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• 제18권2호
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• pp.395-406
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• 2018

Marine controlled-source electromagnetic transmitters (MCSETs) are important in marine electromagnetic exploration systems. They play a crucial role in the exploration of solid mineral resources, marine oil, and gas and in marine engineering evaluation. A DC-DC controlled-source circuit is typically used in traditional MCSETs, but using this circuit in MCSETs causes several problems, such as large voltage ringing of the high-frequency diode, heating of the insulated-gate bipolar transistor (IGBT) module, high temperature of the high-frequency transformer, loss of the duty cycle, and low transmission efficiency of the controlled-source circuit. This paper presents a clamping-diode circuit for MCSET (CDC-MCSET). Clamping diodes are added to the controlled-source circuit to reduce the loss of the duty ratio and the voltage peak of the high-frequency diode. The temperature of the high-frequency diode, IGBT module, and transformer is decreased, and the service life of these devices is prolonged. The power transmission efficiency of the controlled-source circuit is also improved. Saber simulation and a 20 KW MCSET are used to verify the correctness and effectiveness of the proposed CDC-MCSET.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.85-91
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• 2008

A Boost Power Factor Correction (PFC) Converter employing Zero Voltage Switching (ZVS) based Compound Active Clamping (CAC) technique is presented in this paper. An Electro Magnetic Interference (EMI) Filer is connected at the line side of the proposed converter to suppress Electro Magnetic Interference. The proposed converter can effectively reduce the losses caused by diode reverse recovery. Both the main switch and the auxiliary switch can achieve soft switching i.e. ZVS under certain condition. The parasitic oscillation caused by the parasitic capacitance of the boost diode is eliminated. The voltage on the main switch, the auxiliary switch and the boost diode are clamped. The principle of operation, design and simulation results are presented here. A prototype of the proposed converter is built and tested for low input voltage i.e. 15V AC supply and the experimental results are obtained. The power factor at the line side of the converter and the converter efficiency are improved using the proposed technique.

• Journal of Power Electronics
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• 제9권5호
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• pp.772-780
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• 2009

A novel soft-switching two-switch flyback converter is proposed in this paper. This converter is composed of two active power switches, a flyback transformer, a blocking diode, and two passive regenerative clamping circuits. The proposed converter has the advantages of a low cost circuit configuration, a simple control scheme, a high efficiency, and a wide operating range. The circuit topology, analysis, design considerations, and experimental results of the new flyback converter are presented.

• 조명전기설비학회논문지
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• 제29권1호
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• pp.94-102
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• 2015

The electronic ballast for HID lamps needs to ignite lamps even though the length from the ballast to lamp is far away. Therefore, it needs to do the research on a resonant ignition to turn on the HID lamps because the reduction of ignition voltage is not much depending on the distance. However, the parasitic capacitance is increased depending the length of the cable, and it affects the resonant frequency. The ignitor voltage can be increased drastically under the resonant ignition through frequency sweep, and it is the main reason of blowing up. Therefore, the clamping diode is proposed to suppress the voltage of the primary winding during resonant ignition.

• Journal of Advanced Marine Engineering and Technology
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• 제23권2호
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• pp.159-167
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• 1999

This paper presents a new transient voltage blocking device(TOBD)which low power and high frequency bandwidth to protect info-communication facilities from transient voltages. Conventional protection devices have some problems such as low frequency bandwidth low ener-gy capacity and high remnant voltage. in order to improve these limitations a hybrid type TOBD which consists of a gas tube avalanche diodes and junction type field effect transistor (JFETs) is developed. The TOBD differs from the conventional protection devices in configuration and JFETs are used as an active non-linear element and a high speed switching diode with low capacitance limited high current. Therefore the avalanche diode with low energy capacity are protected from the high current and the TOBD has a very small input capacitance. From the performance test using combination surge generator which can produce $1.2/50{\mu}m$ 4.2 kV/max, $8/20{\mu}m$ 2.1 kAmax it is confirmed that the proposed TOBD has an excellent protection per-formance in tight clamping voltage and limiting current characteristics.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1066-1074
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• 2015

This paper presents the reverse recovery characteristic according to the change of switching states when Si diode and SiC diode are used as clamp diode and proposes a method to minimize the switching loss containing the reverse recovery loss in the neutral-point-clamped inverter at low modulation index. The previous papers introduce many multiple circuits replacing Si diode with SiC diode to reduce the switching loss. In the neutral-point-clamped inverter, the switching loss can be also reduced by replacing device in the clamp diode. However, the switching loss in IGBT is large and the reduced switching loss cannot be still neglected. It is expected that the reverse recovery effect can be infrequent and the switching loss can be considerably reduced by the proposed method. Therefore, it is also possible to operate the inverter at the higher frequency with the better system efficiency and reduce the volume, weight and cost of filters and heatsink. The effectiveness of the proposed method is verified by numerical analysis and experiment results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.208-212
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• 2003

Silicon transient voltage suppressors (TVSs) are clamping devices that limit voltage spikes by low impedance avalanche breakdown of a rugged silicon PN junction. They are used to protect sensitive components from electrical overstress such as that caused by induces lightning, inductive load switching and electrostatic discharge. In this paper, we present static and dynamic characteristics of TVS diode using thermal analysis simulation software. And also, it is presented that the thermal dissipation characteristics of TVS diode in the transient state.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.221-225
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• 2016

This paper reports a new method to enable the normally-off operation of AlGaN/GaN heterojunction field-effect transistors (HFETs). A capacitor was connected to the gate input node of a normally-on AlGaN/GaN HFET with a Schottky gate where the Schottky gate acted as a clamping diode. The combination of the capacitor and Schottky gate functioned as a clamp circuit to downshift the input signal to enable the normally-off operation. The normally-off operation with a virtual threshold voltage of 5.3 V was successfully demonstrated with excellent dynamic switching characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.58-69
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• 2016

This paper describes the design and implementation of a new diode clamped multilevel inverter for variable frequency drive. The diode clamp multilevel inverter has been widely used for low power, high voltage applications due to its superior performance. However, it has some limitations such as increased number of switching devices and complex PWM control. In this paper, a new topology is proposed. New topology requires only (N-1) switching devices and (N-3) clamping diodes compared to existing topology. A modified APO-PWM control method is used to generate gate pulses for inverter. The proposed inverter topology is coupled with single phase induction motor and its performance is tested by MATLAB simulation. Finally, a prototype model has built and its performance is tested with single phase variable frequency drive.

• Journal of Power Electronics
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• 제14권6호
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• pp.1189-1196
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• 2014

A modular multilevel-clamped composited multilevel converter ($M-MC^2$) is proposed. $M-MC^2$ enables topology reconfiguration, power device reuse, and composited clamping. An advanced five-level converter ($5L-M-MC^2$) is derived from the concept of $M-MC^2$. $5L-M-MC^2$ integrates dual three-level T-type modules and one three-level neutral point clamped module. This converter can also integrate dual three-level T-type modules and one passive diode module by utilizing the device reuse scheme. The operation principle and SPWM modulation are discussed to highlight converter performance. The proposed $M-MC^2$ is comprehensively compared with state-of-the-art five-level converters. Finally, simulations and experimental results are presented to validate the effectiveness of the main contributions of this study.