• 한국안전학회지
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• 제37권6호
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• pp.1-8
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• 2022

This study analyzed the characteristics of insulation resistance and operating time based on an accelerated degradation test of a low-voltage circuit breaker. The experimental sample used a molded case circuit breaker (MCCB) and an earth leakage circuit breaker (ELCB). After measuring the insulation resistance of the circuit breakers, the leakage current was affected by an external rather than an internal structure. Furthermore, the insulation resistance of the circuit breakers with accelerated degradation was measured using a Megger insulation tester. In the accelerated degradation test, aging times of five, ten, 15, and 20 years were applied according to a temperature derived using the Arrhenius equation. Circuit breakers with an equivalent life of ten, 15, and 20 years had increased insulation resistance compared to those with less degradation time. In particular, the circuit breaker with an equivalent life of ten years had the highest insulation resistance. Component analysis of the circuit breaker manufactured through an accelerated degradation test confirmed that the timing of the increase in insulation resistance and the time of additive loss were the same. Finally, after analyzing the operating time of the circuit breakers with degradation, it was confirmed that the MCCB did not change, but the ELCB breaker failed.

• 전기학회논문지
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• 제56권9호
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• pp.1566-1570
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• 2007

[ $SF_6$ ] gas circuit breakers are widely used for short circuit current interruption in EHV(Extra High Voltage) or UHV(Ultra High Voltage) power systems. To develop $SF_6$ gas circuit breakers, the arc resistance value is necessary to compare experimental results to numerical ones. The arc resistance value can be obtained from a breaking test with a $SF_6$ gas circuit breaker. The direct testing or synthetic testing facility is widely used to verify the breaking ability for $SF_6$ gas circuit breakers. We employed the simplified synthetic testing facility to test a $SF_6$ gas circuit breaker prototype. The arc resistance characteristic was measured and calculated under the various experimental conditions. This arc resistance value can be used for verifying the numerical results from arc simulation in a circuit breakers.

• 전기의세계
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• 제23권6호
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• pp.56-59
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• 1974

It is well-known that the anode circuit of SCR has the current controlled negative resistance characteristic. Recently the present auther has shown that the gate circuit of SCR has the voltage controlled negative resistance characteristic for the constant anode voltage. It is shown of the equivalent model to SCR(when conducting) the voltage controlled negative resistance characteristic for gate circuit. And it is possible to make SCR gate oscillators with their desired characteristic for illustration.

• Journal of Electrical Engineering and Technology
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• 제9권4호
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• pp.1332-1342
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• 2014

This paper proposes a novel test circuit for SiC transistors. On-state resistance under practical application conditions is an important characteristic for the device reliability and conduction efficiency of SiC transistors. In order to measure the on-state resistance in practical applications, high voltage is needed, and high current is also necessary to ignite performance for the devices. A soft-switching circuit based on synchronous buck topology is developed in this paper. To provide high-voltage and high-current stresses for the devices without additional spikes and oscillations, a resonant circuit has been introduced. Using the novel circuit technology, soft-switching can be successfully realized for all the switches. Furthermore, in order to achieve accurate measurement of on-state resistance under switching operations, an active clamp circuit is employed. Operation principle and design analysis of the circuit are discussed. The dynamic measurement method is illustrated in detail. Simulation and experiments were carried out to verify the feasibility of the circuit. A special test circuit has been developed and built. Experimental results confirm that the proposed circuit gives a good insight of the devices performance in real applications.

• 대한전자공학회논문지
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• 제13권6호
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• pp.7-11
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• 1976

연산증폭기를 이용한 전압안정부저항회로를 제안하였으며, 전입력전압범위에 걸쳐서 회로를 해석하였다. 부저항영역에서 이 v-i특성이 2가지 구분된 요인에 의해서 이루어짐을 밝혔고, 이 개념에 의해서 역 v-i특성의 꼭지점을 해석하였다. 제안된 회로를 실험하여 얻은 입력 v-i특성의 직선성은 대단히 양호하였으며, 이들의 부저항치는 전압범위 ±1∼±5V에서 -86∼833Ω였다. 그리고 전입력전압범위에서 v-i특성을 검토했다. A voltage-stable negative resistance circuit with operational amplifier is proposed, and circuit analysis is given all the input voltage range. The behavior of the v-i characteristics in the nogative resistance region is devided into two causes, and top points in the input v-i characteristics of the circuit is analyzed with them. Experimental results of the v-i characteristics of the proposed circuit has a good linearity in the negative region with negative resistance, -86Ω∼-833Ω for the input voltage, ± 1∼± 5 colts. The v-i characteristics of the circuit in all the input voltage range is discussed.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1997년도 추계학술발표회논문집
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• pp.11-13
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• 1997

Abstract - An electronic starter using MOSFET has been designed to take advantage of ideal preheating and starting features which can extend the lifetime of fluorescent lamps. The preheating circuit of the developed electronic starter is consisted of four parts - afull-wave rectifier circuit, an FET switching circuit a timer circuit for the gate switching, and a circuit for end-of-life protection. The circuit is analyzed by using PSpice simulation, and is improved to give an appropriate starting-time through control of R-C time constant of the timer circuit. And the circuit is also provided with an end-of-life protection feature, which utilizes the negative resistance characteristics of a thermistor that is thermally linked to FET through a heatsink. This also protects the FET from any overheating problems. From the results of simulation it is possible to obtain an appropriate value on the starting time for proper ignition and also it is verified that the limit for resistance of the thermistor is dependant on the value of resistance is the timer circuit

• 대한전자공학회논문지
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• 제25권1호
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• pp.101-107
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• 1988

This paper proposes a circuit extractor which extracts a netlist from the CIF input file cntaining the layout mask artwork informations. The circuit extractor extracts transistors and their interconnections, and calculates circuit parameter such as parasitic resistance and parasitic capacitance from the mask informations. When calculating the parasitic resistance, we consider the current flow path to reduce the errors caused by the resistance approximation. Similarly, we consider the coupling capacitance which has an effect on the circuit characteristics, when the parasitic capacitances are calculated. Therefore, using these parameter values as an input to circuit simulation, the circuit characteristics such as delay time can be estimated accurately. The presented circuit extraction algorithm uses a multiple storage quad tree as a data sturucture for storing and searching the 2-dimensional geometric data of mask artwork. Also, the proposed algorithm is technologically independent to work across a wide range of MOS technologies without any change in the algorihm.

• 대한전자공학회논문지
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• 제10권1호
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• pp.9-17
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• 1973

본논문온 전류안정부저항특성을 나타내는 회로를 구성하는데 있어서, 입력전류가 변하는 어느 구간에서 입력전류의 변화에 따라서, SAMUEL SEELY가 제시한 Beam저항을 도입하여, Beam저항이 감소하는 원리를 적용하였다. 이러한 원리에 따르는 회로의 모델을 트랜지스터 회로로써 구체화하였다. 구체화된 트런지스터회로는 PNP 트런지스터와 NPN트랜지스터와 저항으로 이루어졌다. 이 회로의 전압-전류특성이 안정되도록 하기 위하여 회로를 수정하여 회로의 동작을 추정하여 해석하였다. 추정된 동작과 부저항치를 실험을 통하여 모두 뒷밭침 하였다. 여기서 얻어진 회로은 쟈이레이터의 구성과 SCR동작의 모의화등에 유용하게 이용될 것이며, 전류안정중저항회로의 구성에 관한 평이화를 기하였다.

• 전기학회논문지
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• 제65권7호
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• pp.1186-1192
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• 2016

This paper proposes techniques to diagnose short-circuit faults of both the diodes and power FET in switching mode power supply (SMPS) by using a simple analog tester. The diodes in full-bridge rectifier, power FET, switching transformer, and some sensors are modelled with resistor. The total resistance value measured at the input terminal of a SMPS is analyzed when the short-circuit faults of diodes in a full bridge rectifier or power FET are occurred. The short-circuit faults of one or two diodes in a full bridge rectifier, power FET, and both the diodes in a full bridge rectifier and power FET can be detected by a range of total resistance, which is measured by the analog tester. Through experiments, the theoretical analysis for total resistance under short-circuit faults can be verified.

• Journal of Magnetics
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• 제21권2호
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• pp.239-243
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• 2016

High temperature superconductor (HTS) magnet systems usually employ metal current leads which bridge between the cryogenic environment and room temperature. Such current leads are the dominant heat load for these magnet systems due to a combination of electrical resistance and heat conduction. HTS flux pumps enable large currents to be injected into a HTS magnet circuit without this heat load. We present results from an axial-type HTS mechanically rotating flux pump which employs a ferromagnetic circuit and a Cu-stabilized coated conductor (CC) HTS stator. We show the device can be described by a simple circuit model which was previously used to describe barrel-type flux pumps, where the model comprises an internal resistance due to dynamic resistance and a DC voltage source. Unlike previously reported devices, we show the internal resistance and DC voltage in the flux pump are not exactly proportional to frequency, and we ascribe this to the presence of eddy currents. We also show that this axial-type flux pump has superior current injection capability over barrel-type flux pumps which do not incorporate a magnetic circuit.