• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.33-36
• /
• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The rise throughput and the stability in the device fabrication can be obtained by applying of CMP process to STI structure in 0.18$\mu\textrm{m}$ m semiconductor device. The reverse moat process has been added to employ in of each thin films in STI-CMP was not equal, hence the devices must to be effected, that is, the damage was occurred in the device area for the case of excessive CMP process and the nitride film was remained on the device area for the case of insufficient CMP process, and than, these defects affect the device characteristics. Also, we studied the High Selectivity Slurry(HSS) to perform global planarization without reverse moat step.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1997년도 추계학술대회 논문집
• /
• pp.935-938
• /
• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2004년도 춘계학술대회 논문요약집
• /
• pp.144-144
• /
• 2004

마이크로프로세서가 점점 더 고집적화 되어감에 따라 가장 중요한 반도체 제조 기술 중 하나인 로광시 초점 심도를 맞추기 위해 웨이퍼의 광역 평탄화가 요구되어 왔다. 화학 기계적 연마기술(CMP： Chemical Mechanical Polishing)은 80년대 중반 IBM에 의해 제안된 이후 이러한 요구를 만족시키기 위해서 마이크로프로세서산업에 있어서 필수 기술로 자리매김 되고 있다. 화학 기계적 연마기술은 연마 결과에 영향을 미치는 인자가 많아 체계적인 기술로 발전되지 못하고 경험적인 기술에 머물러 있는 단계이다.(중략)

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.456-460
• /
• 1997

As device sizes are scaled to submicron dimensions, planarization technology becomes increasing1y important, both during device fabrication and during formation of multilevel interconnects and wiring. Chemical Mechanical Polishing (CMP) has emerged recently as a new processing technique for achieving a high degree of planarization for submicron VLSI applications. This paper is presented the results of CMP process window characterization studies for 0.35 micron process with 6 metal layers.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
• /
• pp.445-446
• /
• 2002

The purpose of this study was to investigate the effect of micro holes, pattern structure and elastic modulus of pads on the polishing behavior such as the removal rate and WIWNU (within wafer non-uniformity) during CMP. The regular holes on the pad act as the superior abrasive particle's reservoir and regular distributor at the bulk pad, respectively. The superior CMP performance was observed at the laser processed bulk pad with holes. Also, th ε groove pattern shape was very important for the effective polishing. Wave grooved pad showed higher removal rates than K-grooved pad. The removal rate was linearly increased as the top pad's elastic modulus increased.

• 한국전기전자재료학회논문지
• /
• 제25권7호
• /
• pp.569-573
• /
• 2012

We investigated the speed change of the diamond spherical abrasive during the substrate surface polishing under the pad compression by using classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. As the compressive pressure increased, the indented depth of the diamond abrasive increased and then, the speed of the diamond abrasive along the direction of the pad moving was decreased. Molecular simulation result such as the abrasive speed decreasing due to the pad pressure increasing gave important information for the chemical mechanical polishing including the mechanical removal rate with both the pad speed and the pad compressive pressure.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 춘계학술대회
• /
• pp.1296-1301
• /
• 2003

The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer and metal line in the semiconductor device. The conditioning of polishing pad in CMP process additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has the swelling characteristic by water owns the self-conditioning advantage as compared with the general CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• 한국전기전자재료학회논문지
• /
• 제16권12S호
• /
• pp.1157-1164
• /
• 2003

This paper shows the results of atomistic modeling for the interaction between spherical nano abrasive and substrate in chemical mechanical polishing processes. Atomistic modeling was achieved from 2-dimensional molecular dynamics simulations using the Lennard-Jones 12-6 potentials. The abrasive dynamics was modeled by three cases, such as slipping, rolling, and rotating. Simulation results showed that the different dynamics of the abrasive results the different features of surfaces. This model can be extended to investigate the 3-dimensional chemical mechanical polishing processes.

• 전기전자학회논문지
• /
• 제23권4호
• /
• pp.1175-1181
• /
• 2019

논문에서는 1:10으로 희석된 실리카 슬러리에 산화망간(MnO₂) 연마제를 첨가하여 재처리된 혼합연마제 슬러리(Mixed Abrasive Slurry; MAS)의 화학기계적연마(CMP) 특성을 연구하였다. 최적의 연마 성능을 갖는 슬러리를 설계하기 위해서는 높은 연마율, 하부층에 대한 적절한 연마선택비, 연마 후의 낮은 표면결함, 슬러리의 안정성 등을 얻어야 한다. 산화망간이 첨가된 MAS의 연마 성능은 연마율 및 비균일도와 같은 CMP 성능, 입도 분석, 표면 형상에 대해 평가하였다. 실험결과, 높은 연마율과 낮은 비균일도 측면에서 볼 때 원액 실리카 슬러리와 대등한 슬러리 특성을 얻을 수 있었다. 따라서 본 연구에서 제안하는 MnO₂-MAS를 사용하면 고가의 소모재인 슬러리를 절약하는데 매우 유용할 것이다.

• 한국전기전자재료학회논문지
• /
• 제20권10호
• /
• pp.839-845
• /
• 2007

In this paper, a polishing pad has been analyzed in detail, to understand surface phenomena of polishing process. The polishing pad plays a key role in polishing process and is one of the important layer in polishing process, because it is a reaction layer of polishing[1]. Pad surface physical property is also ruled by pad profile. The profile and roughness of pad is controlled by different types of conditioning tool. Conditioning tool add mechanical force to pad, and make some roughness and profile. Formed pad surface will affect on polishing performance such as RR (Removal Rate) and uniformity in CMP Pad surface condition is changed by conditioning tool and dummy run and is stable at final. And this research, we want to reduce break-in and dummy polishing process by analysis of pad surface and artificial machining to make stable pad surface. The surface treatment or machining enables to control the surface of polishing pad. Therefore, this research intends to verify the effect of the buffing process on pad surface through analysis of the removal rate, friction force and temperature. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied because, this type of pad is most conventional type.