• Journal of the Korean Applied Science and Technology
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• v.7 no.2
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• pp.41-45
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• 1990

A Stability to the dispersion solvent, which is acetonitrile, dichloromethane, benzene, chloroform and acetonitrile-benzene(1:1,v/v) of {N-docosyl pyridinium)-TCNQ(1:2)complex was investigated by U.V Spectrophotometer and was confirmed stabilized on acetonitrile, the dichloromethane and acetonitrile-benzene (1:1,v/v) for seven hours. Using $CdCl_2$buffer solution as subphase for LB films deposition, it was achived successively to fabricate the Y-type LB films of (N-docosyl pyridinium)-TCNQ(1:2)complex. For the sake of verifying the deposition of LB films, U.V is measured by variation of nominal layer number.

• Journal of the Korean Applied Science and Technology
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• v.7 no.1
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• pp.77-80
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• 1990

Using $CdCl_2$ buffer solution as subphase for LB films deposition, it was achieved successively to fabricate the Y-type mixed LB films of (N-eicosyl pyridinium)-TCNQ(1:2) complex and arachidic acid. By measure of U.V spectra and capacitance, deposition status was confirmed. Electrical conductivity was measured on a perpendicular direction of the LB films and in consequence of calculated was average $2.5\;{\times}\;10^{-13}$ - $2\;{\times}\;10^{-14}$ S/cm.

• Biotechnology and Bioprocess Engineering:BBE
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• v.2 no.2
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• pp.109-112
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• 1997

Morphology of carbonate crystals grown on the surface of artificial cell membranes was controlled by changing the interfacial chemistry. For octadecyltriethoxysilane (OTE) films with terminal methyl groups interacting little with an aqueous calcium carbonate solution calcite (104) crystals were formed. Polymerized pentacosadiynoic acid (PDA) films with terminal carboxylic acid groups induced deposition of calcite (012) crystals aligned along with each other within a polymer domain. On the other hand, stearyl alcohol (StOH) films with terminal hydroxyl groups induced deposition of aragonite crystals. When PDA was mixed with StOH, the 8:1 PDA:StOH (molar ratio) film produced dominating calcite (012) crystals without any crystal alignment, and the 4:1 mixture film produced minor calcite (012) crystals and major aragonite crystals. For the 2:1, 1:1, 1:2, and 1:4 mixture films, aragonite crystals were dominating. Hence, it is found that the chemical composition at the interface plays a very important role in controlling the morphology of deposited carbonate crystals.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.150-150
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• 2009

We prepared the Au-coated $TiO_2$ (Au/$TiO_2$) nanoparticles by deposition-precipitation (DP) method with and without bases (urea or NaOH) and investigated the effects of pH on the preparation of Au/$TiO_2$ nanoparticles for various kinds of bases. For the DP method without bases, the Au nanoparticles in the diameter of about 50 nm were generated in the solution by the reduction reaction with trisodium citrate and they did not deposit on the surface of $TiO_2$. For the DP method with bases, Au precursors deposited on the surface of $TiO_2$ and then reduced to the Au nanoparticles in the diameter of 4-5 nm on the surface of $TiO_2$ by the reaction with trisodium citrate.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.365-370
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• 1996

Electrochromic $WO_3$ films were prepared by using an electron-beam deposition method. The dependence of the chemical stability of film on the substrate temperature was studied. From the experimental results, The optical property and chemical stability of as-deposited films strongly depended on the substrate temperature. The $WO_3$ film prepared at a substrate temperature of $80^{\circ}C$ was found to be the most stable when subjected to repeated coloring and bleaching cycles in an organic 0.6M $LiClO_4$ solution.

• Journal of the Korea Safety Management & Science
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• v.4 no.2
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• pp.199-207
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• 2002

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for $Cu_2$S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 50$0^{\circ}C$ for 15 second and annealed at 35$0^{\circ}C$ for 20 minute or 50$0^{\circ}C$ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of $Cu_2$S/CdS heterojunction, the open circuit voltage, $V_{oc}$ was 0.7 V and the short circuit current, $I_{sc}$ was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.

• Progress in Superconductivity
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• v.12 no.2
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• pp.118-123
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• 2011

The properties of $2^{nd}$ generation high temperature superconducting wire, coated conductor strongly depend on the quality of superconducting oxide layer and property of metal substrate is one of the most important factors affecting the quality of coated conductor. Good mechanical and chemical stability at high temperature are required to maintain the initial integrity during the various process steps required to deposit several layers consisting coated conductor. And substrate need to be nonmagnetic to reduce magnetization loss for ac application. Hastelloy and stainless steel are the most suitable alloys for metal substrate. One of the obstacles in using stainless steel as substrate for coated conductor is its difficulties in making smooth surface inevitable for depositing good IBAD layer. Conventional method involves several steps such as electro polishing, deposition of $Al_2O_3$ and $Y_2O_3$ before IBAD process. Chemical solution deposition method can simplify those steps into one step process having uniformity in large area. In this research, we tried to improve the surface roughness of stainless steel(SUS310). The precursor coating solution was synthesized by using yttrium complex. The viscosity of coating solution and heat treatment condition were optimized for smooth surface. A smooth amorphous $Y_2O_3$ thin film suitable for IBAD process was coated on SUS310 tape. The surface roughness was improved from 40nm to 1.8 nm by 4 coatings. The IBAD-MgO layer deposited on prepared substrate showed good in plane alignment(${\Delta}{\phi}$) of $6.2^{\circ}$.

• Applied Chemistry for Engineering
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• v.23 no.4
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• pp.377-382
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• 2012

CdS thin films have been widely used as a buffer layer of CIGS semiconductor solar cells to reduce the lattice mismatch between transparent electrode and absorber layer. In order to prepare the CdS films with high transparency and low resistivity, they were deposited by varying Cd concentration with the constant S concentration in the solution using chemical bath deposition method. They were analyzed in terms of structural, optical and electrical properties of CdS films according to the $[S^{2-}]/[Cd^{2+}]$ ratio. In the case of Cd concentration higher than S concectration, CdS thin films were formed mainly by cluster- by-cluster formation due to the homogeneous reaction between Cd and S in the solution. Therefore the grain size increased and the transmittance decreased. On the other hand, in the case of Cd concentration lower than S concentration, CdS films were formed by heterogeneous reaction on the substrate rather than in the solution. The CdS films have the grains with the uniform circular shape of a few hundreds ${\AA}$. As the Cd concentration increased in the solution, the $[S^{2-}]/[Cd^{2+}]$ ratio decreased and the resistivity decreased by the increase in the carrier concentration due to the formation S vacancy by the excess Cd.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.254-254
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• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.