• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.41-45
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• 2018

Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.60-63
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• 2023

The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Journal of the Korean Chemical Society
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• v.60 no.6
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• pp.402-409
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• 2016

Thin films of lead sulfide colloidal quantum dots (CQDs) of 2.8 nm in diameter are fabricated and their surfaces are passivated by 3-mercaptopropionic acid (MPA) ligand or hybrid type ($MPA+CdCl_2$) ligand, respectively. The changes in valence band electronic structure and atomic composition of each PbS CQD film upon post-treatment such as air, N2 annealing or UV/Ozone have been studied by photoelectron spectroscopy. The air annealing makes the CQD fermi level to move toward the valence band leading to "p-type doping" regardless of ligand type. The UV/Ozone post-treatment generates $Pb(OH)_2$, $PbSO_x$ and PbO on both CQD surfaces. But the amount of the PbO has been reduced in hybrid type ligand case, especially. That is probably because the extra Pb cations in (111) surface are additionally passivated by $Cl_2$ ligand, which limits the reaction between the Pb cation and ozone.

• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.451-457
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• 2006

We synthesized phase pure CrN having surface areas up to $47m^2/g$ starting from $CrCl_{3}$ with $NH_{3}$. Thermal Gravimetric Analysis coupled with X-ray diffraction was carried out to identify solid state transition temperatures and the phase after each transition. In addition, the BET surface areas, pore size distributions, and crystalline diameters for the synthesized materials were analyzed. Space velocity influenced a little to the surface areas of the prepared materials, while heating rate did not. We believe it is due to the fast removal of reaction by-products from the system. Temperature programmed reduction results revealed that the CrN was hardly passivated by 1% $O_{2}$. Molecular nitrogen was detected from CrN at 700 and $950^{\circ}C$, which may be from lattice nitrogen. In temperature programmed oxidation with heating rate of 10 K/min in flowing air, oxidation started at or higher than $300^{\circ}C$ and resulting $Cr_{2}O_{3}$ phase was observed with XRD at around $800^{\circ}C$. However the oxidation was not completed even at $900^{\circ}C$. CrN catalysts were highly active for n-butane dehydrogenation reaction. Their activity is even higher than that of a commercial $Pt-Sn/Al_{2}O_{3}$ dehydrogenation catalyst in terms of volumetric reaction rate. However, CrN was not active in pyridine hydrodenitrogenation.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.21-25
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• 2014

The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.

• Applied Chemistry for Engineering
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• v.32 no.6
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• pp.664-670
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• 2021

Stainless steel was applied as bipolar plate (BP) of polymer electrolyte membrane fuel cell (PEMFC) due to high mechanical strength, electrical conductivity, and good machinability. However, stainless steel was corroded and increased contact resistance resulting PEMFC performance decrease. Although the corrosion resistance could be improved by surface treatment such as noble metal coating, there is a disadvantage of cost increase. The stainless steel corrosion behavior and passive layer influence on PEMFC performance should be studied to improve durability and economics of metal bipolar plate. In this study, SUS316L bipolar plate of 25 cm² active area was manufactured, and experiments were conducted for corrosion behavior at an anode and cathode. The influence of SUS316L BP corrosion on fuel cell performance was measured using the polarization curve, impedance, and contact resistance. The metal ion concentration in drained water was analyzed during fuel cell operation with SUS316L BP. It was confirmed that the corrosion occurs more severely at the anode than at the cathode for SUS316L BP. The contact resistance was increased due to the passivation of SUS316L during fuel cell operation, and metal ions continuously dissolved even after the passive layer formation.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.04a
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• pp.34-34
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• 2001

열CVD법에 의하여 아세틸렌 가스를 탄소 원으로 사용한 탄소 나노튜브의 성장거동을 조사하였다. 닉켈 분말의 직경을 15nm 내지 90nm 범위로 조정하여 기판 에 촉매로 배열하였다. 탄소 나노튜브는 질소, 수소, 알곤, 암모니아 등 여러가지의 가스 분위기에서 증착되었으며 이들 가스의 혼합 분위기가 탄소나 노튜브의 성장에 미치는 영향을 조사하였다. 증착은 대기압 압력하에서 85$0^{\circ}C$ 의 온도에서 이루어졌다. 순수한 질소 분위기에서는 탄소 나노튜브의 성장이 이루어지지 않고 두꺼운 탄소 층이 기판 위에 중착되었다. 이 조건에서는 탄소로 뒤덮혀진 닉켈 입자가 탄소 나노튜브 형성의 촉매 역할을 담당하지 못했다. 그러나 질소와 수소의 혼합분위기에서는 수소의 농도가 증가함에 따라 탄소 나노튜브의 성장이 증진되었다. 순수한 수소 분위기에서는 일정한 방향이 없이 꼬여진 탄소 나노튜브가 성장되었다. 탄소 나노튜브의 성장은 분위기 가스로 암모니아를 사용하였을 때 훨씬 더 증진되었다. 수직으로 배열된 탄소 나노튜료를 암모니아 분위기에서는 성장시킬 수 있었으나 암모니아와 같은 비율의 수소와 질소 가스의 혼합 분위기 하에서 는 탄소 나노튜브의 성장을 얻을 수 없었다. 이러한 결과를 여기에서는 닉켈 촉매의 표면에 과도하게 석출된 탄소의 촉매 passivation으로 설명하였다. 탄소 나노튜브의 증착을 위해서는 아세틸렌 가스의 분해율이 너무 과도하지 않게 즉 촉매의 표면이 과도한 탄소의 증착으로 수동태화 되지않도록 조절되어야 한다는 것이다. 이 연구결과는 분위기 가스의 조성이 탄소 나노튜브의 성장에 있어서 그 반웅 kinetics에 큰 영향을 미친다는 것을 잘 보여주고 있다. 또한 암모니아 분위기에서는 촉매 닉켈입자 표면에 질화물층이 형성되어 탄소 나노튜브의 성장에 영향을 미쳤다는 것도 알 수 있었다.며 실제 가공업체에서도 터짐 문제가 발견되지 않았다. 결론적으로 표면층의 인장강도가 패션/구부림에 가장 중요한 변수로 작용하며 어떠 한 형태로 표면층의 인장강도를 향상시킬 경우 침엽수 펄프는 재생펄프로 대체가 가능 할 것으로 판단된다.하는 통계기법 중의 하나인 주성분회귀분석을 실시하였다. 주성분 분석은 여러 개의 반응변수에 대하여 얻어진 다변량 자료의 다차원적인 변 수들을 축소, 요약하는 차원의 단순화와 더불어 서로 상관되어있는 반응변수들 상호간 의 복잡한 구조를 분석하는 기법이다. 본 발표에서는 공정 자료를 활용하여 인공신경망 과 주성분분석을 통해 공정 트러블의 발생에 영향 하는 인자들을 보다 현실적으로 추 정하고, 그 대책을 모색함으로써 이를 최소화할 수 있는 방안을 소개하고자 한다.금 빛 용사 둥과 같은 표면처리를 할 경우임의 소재 표면에 도금 및 용 사에 용이한 재료를 오버레이용접시킨 후 표면처리를 함으로써 보다 고품질의 표면층을 얻기위한 시도가 이루어지고 있다. 따라서 국내, 외의 오버레이 용접기술의 적용현황 및 대표적인 적용사례, 오버레이 용접기술 및 용접재료의 개발현황 둥을 중심으로 살펴봄으로서 아직 국내에서는 널리 알려지지 않은 본 기 술의 활용을 넓이고자 한다. within minimum time from beginning of the shutdown.및 12.36%, $101{\sim}200$일의 경우 12.78% 및 12.44%, 201일 이상의 경우 13.17% 및 11.30%로 201일 이상의 유기의 경우에만 대조구와 삭제 구간에 유의적인(p<0.05) 차이를 나타내었다.는 담수(淡水)에서 10%o의 해수(海水)로 이주된지 14일(日) 이후에 신장(腎臟)에서 수축된 것으로 나타났다. 30%o의 해수(海水)에 적응(適應)된 틸라피아의 평균 신사구체(腎絲球體)의 면적은 담수(淡水)에

• Journal of Adhesion and Interface
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• v.21 no.3
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• pp.107-112
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• 2020

Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe₂ one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe₂ was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe₂-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×10⁶, and 192 mV/decade of subthreshold swing.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.383-383
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• 2014

최근 디스플레이, 태양전지 그리고 touch screen panels 등 optoelectronic 장치의 시장이 성장함에 따라 투명전극의 수요가 증가하고 있다. Indium tin oxide (ITO)의 좋은 특성 때문에 주로 투명전극에 많이 사용되고 있다. 그러나 화학적 안정성이 떨어지고, 휘어질 때 특성저하가 심하여 금속나노와이어, 탄소나노튜브, 전도성폴리머, 그리고 그래핀 등의 다른 투명전극의 연구가 활발히 진행되고 있다. 그 중에서 그래핀은 높은 전자 이동도(200000 cm2v-1s-1)와 휘어져도 전기적 크게 변하지 않는 특성 때문에 유망한 투명 전도성 전극 (Transparent Conductive Electrodes, TCEs)으로 연구되어왔다. 또한 다양한 속성 가운데, 높은 광 투과성은 그래핀의 가장 큰 장점이다 [1]. 최근, 화학 기상 증착 (Chemical Vapor Deposition, CVD) 등 다양한 제조 방법이 대량 생산을 위해 개발되었다. 그러나 이 방법은 비용이 많이 들며, 과정이 상당히 복잡하고 높은 온도 (${\sim}1000^{\circ}C$)를 필요로 한다. 따라서 용매 기반의 환원된 그래핀 산화물(Reduced Graphene Oxides, RGOs)이 최근 주목 받고 있다. 그러나 RGOs의 면저항이 높아 전극으로서 사용이 제한된다. 따라서 전기적 특성을 향상시키는 방법으로 단일 벽 탄소 나노튜브 (Single-Walled Carbon Nanotubes, SWNTs)를 혼합하거나 화학적 도핑을 통하여 면저항을 크게 향상시키는 연구가 활발히 진행되고 있다. 그러나 이런 화학적 도핑의 경우 박막이 공기 중에 직접 산소나 습기와 반응하여 전기적 특성이 저하되는 문제점을 가지고 있다 [2]. 이러한 문제를 해결하기 위해 AuCl3을 도핑한 박막에 내열성 및 내광성 등의 화학적 안정성이 뛰어난 PEDOT:PSS를 코팅하여 필름의 공기중의 노출을 막아 줌으로써 도핑의 안전성 및 전기적 특성을 최적화하였다. 본 연구에서는 간단한 dip-coating방법을 사용하여 4개의 RGO/SWNTs 박막을 흡착하였다. 다음으로 AuCl3를 도핑하여 면저항 $4.909K{\Omega}$, $4.381K{\Omega}$인 두 개의 샘플의 시간과 온도에 따른 면저항의 변화를 확인하였다. 그리고 필름의 도핑 안전성을 향상 시키기 위해 AuCl3를 도핑한 필름 위에 전도성 폴리머 PEDOT:PSS 코팅하여 면저항 $886.1{\Omega}$, $837.5{\Omega}$인 두 개의 샘플의 시간과 온도에 따른 면저항의 변화를 확인하였다. AuCl3 도핑된 필름의 경우 공기 중에 150시간 노출 시 72%의 면저항 증가가 발생하였지만 PEDOT:PSS가 코팅된 필름의 경우 5%의 면저항 증가가 나타나 확연한 차이를 보였다. 또한 AuCl3 도핑한 필름의 경우 $150^{\circ}C$에서 60시간동안 공기중에 노출되었을 때 525%의 면저항 증가가 발생하였지만 PEDOT:PSS가 코팅된 필름의 경우 58%의 면저항 증가를 나타내었다. 이것은 PEDOT:PSS가 passivation역할을 하여 필름이 공기에 노출된 부분을 막아주어 도핑된 필름의 면저항의 변화를 줄여 주었음을 알 수 있다.