• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.5
• /
• pp.358-363
• /
• 2010

The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.

• Journal of Surface Science and Engineering
• /
• v.52 no.6
• /
• pp.350-356
• /
• 2019

In this study, the effect of mechanical polishing of carbon steel on the tribological properties of manganese phosphate coating on carbon steel has investigated. The microstructure, surface morphology and chemical composition were analyzed by SEM, EDS, and XRD. The surface roughness test was carried out in order to calculate Rvk value by 3D laser microscopy. Also, the tribology property of manganese phosphate coating was tested by ball-on disk. In the results of EDS analysis, coating layer consists of elements such in Mn, P, Fe, and O. XRD showed that (Mn,Fe)₅H₂(PO₄)₄·4H₂O in manganese phosphate coating layer was formed by the chemical reaction between manganese phosphate and elements in carbon steel. As the mechanical polishing degree increased, the friction coefficient was reduced. The rougher the mechanical polishing degree, the better corrosion resistance was obtained.

• Journal of the Korean Vacuum Society
• /
• v.10 no.3
• /
• pp.361-367
• /
• 2001

Recently, Chemical Mechanical Polishing(CMP) has become a leading planarization technique as a method for silicon wafer planarization that can meet the more stringent lithographic requirement of planarity for the future submicron device manufacturing. The SOI(Silicon On Insulator) wafer has received considerable attention as bulk-alternative wafer to improve the performance of semiconductor devices. In this paper, the objective of study is to investigate Material Removal Rate(MRR) and surface micro-roughness effects of slurry and pad in the CMP process. When particle size of slurry is increased, Material Removal rate increase. Surface micro-roughness is greater influenced by pad than by particle size of slurry. As a result of AM measurement, surface micro-roughness was improved from 27 $\AA$ Rms to 0.64 $\AA$Rms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.7
• /
• pp.605-609
• /
• 2005

Chemical mechanical polishing (CMP) of Ni was performed by the various ratios of four kinds of oxidizers and an addition of alumina powders as an abrasive in each slurry with the different oxidizers. Moreover, the interaction between the Ni and the each oxidizer was discussed by potentiodynamic polarization measurement, in order to compare the effects of Ni-CMP and electrochemical characteristics on the Ni with the different oxidizers. As an experimental result, the removal rate of Ni reached a maximum at 1 $vol\%$ of $H_2O_2$. Also the removal rates of Ni increased with the audition of alumina abrasives in each slurry. The potentiodynamic polarization of Ni under dynamic condition showed a significant difference in electrochemical behavior by addition of $H_2O_2$ in solutions. Ni showed the perfect passivation behavior in solution without $H_2O_2$ under potentiodynamic polarization condition, while active dissolution dominates in solution with the addition of $H_2O_2$. The results indicate that the surface chemistry and electrochemical characteristics of Ni play an important role in controlling the polishing behavior of Ni.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1312-1315
• /
• 2004

Chemical Mechanical Polishing is referred to as a three body tribological system, because it includes two solids in relative motion and the slurry. On the assumption that the abrasives between the pad and the wafer could be a major reason of not only the friction force but also material removal during polishing. The friction force generated by the abrasives was inspected with the change of abrasive size and concentration in this paper. The variation of coefficient of friction with abrasive concentration and size could result from the condition of contact and load balance between wafer and abrasives carried by pad asperity. The simulation was performed in this paper and compared with the result of experiment. The material removal rate also estimated with abrasive concentration and size increasement.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1384-1385
• /
• 2006

Platinum is a candidate of top and bottom electrode in ferroelectric random access memory and dynamic random access memory. High dielectric materials and ferroelectric materials were generally patterned by plasma etching, however, the low etch rate and low etching profile were repoted. We proposed the damascene process of high dielectric materials and ferroelectric materials for patterning process through the chemical mechanical polishing process. At this time, platinum as a top electrode was used for the stopper for the end-point detection as Igarashi model. Therefore, the control of removal rate in platinum chemical mechanical polishing process was required. In this study, an addition of $H_{2}O_{2}$ oxidizer to alumina slurry could control the removal rate of platinum. The removal rate of platinum rapidly increased with an addition of 10wt% $H_{2}O_{2}$ oxidizer from 24.81nm/min to 113.59nm/min. Within-wafer non-uniformity of platinum after chemical mechanical polishing process was 9.93% with an addition of 5wt% $H_{2}O_{2}$ oxidizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.20-23
• /
• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Journal of Surface Science and Engineering
• /
• v.57 no.3
• /
• pp.140-154
• /
• 2024

As the trend towards miniaturization in semiconductor integration process, the limitations of interconnection metals such as copper, tungsten have become apparent, prompting research into the emergence of new materials like cobalt and emphasizing the importance of studying the corresponding process conditions. During the chemical mechanical polishing (CMP) process, corrosion inhibitors are added to the slurry, forming passivation layers on the cobalt surface, thereby playing a crucial role in controlling the dissolution rate of the metal surface, enhancing both removal rate and selectivity. This review investigates the understanding of the cobalt polishing process and examines the characteristics and behavior of corrosion inhibitors, a type of slurry additive, on the cobalt surface. Among the corrosion inhibitors examined, benzotriazole (BTA), 1,2,4-triazole (TAZ), and potassium oleate (PO) all improved surface characteristics through their interaction with cobalt. These findings provide important guidelines for selecting corrosion inhibitors to optimize CMP processes for cobalt-based semiconductor materials. Future research should explore combinations of various corrosion inhibitors and the development of new compounds to further enhance the efficiency of semiconductor processes.

• Journal of the Korean Society for Precision Engineering
• /
• v.19 no.2
• /
• pp.49-57
• /
• 2002

The effect of mechanical parameters on chemical mechanical polishing (CMP) of blanket and patterned aluminum thin films are investigated. CMP process experiments are conducted using the soft pad and the slurry mainly composed of acid solution and A1$_2$O$_3$ abrasive. The result for the blanket film showed that as the concentration of abrasive in slurry is increased, the surface roughness gets worse but the waviness gets better. The planarity of the patterned Al films is slowly improved by CMP when the width of and gap between the patterns are relatively small. It is tried to find the optimized CMP process conditions by that the patterned Al thin film can be planarized with fine surface. The most satisfiable film surface is obtained when the applied pressure is low (10kPa) and the abrasive concentration is relatively high (5wt%).

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.11
• /
• pp.168-173
• /
• 2001

The chemical mechanical polishing (CMP) is generally consisted of pad, slurry including abrasives and so on. However, there are some problems in a general CMP: defects, a high Cost of Consumable (CoC), an environmental problem. The slurry including abrasives especially gives rise to not only increase a CoC, but also prohibition from achieving an eco-process. This paper introduces an abrasive capsulation pad to achieve an eco-process decreasing abrasives used is CMP. The binder wth a water a water swelling and a water soluble characteristic is used for an auto-conditioning, and the $CeO_2$abrasive is selected for an abrasive capsulation pad. Comparing with a conventional CMP, an abrasive capsulation pad appears good characteristics in ILD CMP and is able to achieve an eco-process decreasing wasted slurry.