Chemical Mechanical Polishing of Aluminum Thin Films

알루미늄 박막의 화학기계적연마 가공에 관한 연구

  • Cho, Woong (Dept. of Precision Mechanical Engineering, Hanyang University) ;
  • Ahn, Yoo-Min (Dept. of Mechanical Engineering, Hanyang University) ;
  • Baek, Chang-Wook (Dept.of Electric Computer Engineering, Seoul National University) ;
  • Kim, Yong-Kweon (Dept.of Electric Computer Engineering, Seoul National University)
  • 조웅 (한양대학교 대학원 정밀기계공학과) ;
  • 안유민 (한양대학교 기계공학과) ;
  • 백창욱 (서울대학교 전기컴퓨터공학부) ;
  • 김용권 (서울대학교 전기컴퓨터공학부)
  • Published : 2002.02.01

Abstract

The effect of mechanical parameters on chemical mechanical polishing (CMP) of blanket and patterned aluminum thin films are investigated. CMP process experiments are conducted using the soft pad and the slurry mainly composed of acid solution and A1$_2$O$_3$ abrasive. The result for the blanket film showed that as the concentration of abrasive in slurry is increased, the surface roughness gets worse but the waviness gets better. The planarity of the patterned Al films is slowly improved by CMP when the width of and gap between the patterns are relatively small. It is tried to find the optimized CMP process conditions by that the patterned Al thin film can be planarized with fine surface. The most satisfiable film surface is obtained when the applied pressure is low (10kPa) and the abrasive concentration is relatively high (5wt%).

Keywords

References

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