• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.5
• /
• pp.39-39
• /
• 2003

As the design rules in semiconductor manufacturing process become more and more stringent, the higher degree of planarization of device surface is required for a following lithography process. Also, it is great challenge for chemical mechanical polishing to achieve global planarization of 12” wafer or beyond. To meet such requirements, it is essential to understand the CMP equipment and process itself. In this paper, authors suggest the velocity distribution on the wafer, direction of friction force and the uniformity of velocity distribution of conventional rotary CMP equipment in an analytical method for an intuitive understanding of variation of kinematic variables. To this end, a novel dimensionless variable defined as “kinematic number” is derived. Also, it is shown that the kinematic number could consistently express the velocity distribution and other kinematic characteristics of rotary CMP equipment.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.5
• /
• pp.29-38
• /
• 2003

As the design rules in semiconductor manufacturing process become more and more stringent, the higher degree of planarization of device surface is required for a following lithography process. Also, it is great challenge for chemical mechanical polishing to achieve global planarization of 12” wafer or beyond. To meet such requirements, it is essential to understand the CMP equipment and process itself. In this paper, authors suggest the velocity distribution on the wafer, direction of friction force and the uniformity of velocity distribution of conventional rotary CMP equipment in an analytical method for an intuitive understanding of variation of kinematic variables. To this end, a novel dimensionless variable defined as “kinematic number” is derived. Also, it is shown that the kinematic number could consistently express the velocity distribution and other kinematic characteristics of rotary CMP equipment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.4
• /
• pp.321-326
• /
• 2005

Chemical mechanical polishing(CMP) process is essential technology to be applied to manufacturing the dielectric layer and metal line in semiconductor devices. It has been known that overpolishing in CMP depends on pattern selectivity as a function of density and pitch, and use of fixed abrasive pad(FAP) is one method which can improve the pattern selectivity. Thus, dishing & erosion defects can be reduced. This paper introduces the manufacturing technique of FAP using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. When applied to tungsten blanket wafers, the FAP resulted in appropriate performance in point of uniformity, material selectivity and roughness. Especially, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with the proposed FAP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.4
• /
• pp.297-302
• /
• 2005

Chemical mechanical polishing(CMP) performances can be optimized by several process parameters such as equipment and consumables (pad, backing film and slurry). Pad properties are important in determining removal rate and planarization ability of a CMP process. It is investigated the performance of oxide CMP process using commercial silica slurry after the pad conditioning temperature was varied. Conditioning process with the high temperature made the slurry be unrestricted to flow and be hold, which made the removal rate of oxide film increase. The pad became softer and flexible as the conditioning temperature increases. Then the softer pad provided the better surface planarity of oxide film without defect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.25-28
• /
• 2001

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. Without applying the conventional complex reverse moat process, CMP(Chemical Mechanical Polishing) has established the Process simplification. However, STI-CMP process have various defects such as nitride residue, torn oxide defect, damage of silicon active region, etc. To solve this problem, in this paper, we discussed to determine the control limit of process, which can entirely remove oxide on nitride from the moat area of high density as reducing the damage of moat area and minimizing dishing effect in the large field area. We, also, evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.378-379
• /
• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.370-371
• /
• 2006

본 연구에서는 PZT박막의 강 유전 캐패시터 제작을 위한 연구로, 4-inch크기의 $SiO_2$/Pt/Ti/Si가 증착된 웨이퍼를 습식 식각하여 $SiO_2$ 패턴(0.8um)을 형성하였고, PZT박막의 캐패시터 제작을 위해 패턴 웨이퍼에 $Pb_{1.1}$($Zr_{0.52}Ti_{0.48}$)$O_3$조성을 갖는 PZT를 증착하였다. $600^{\circ}C$에서 열처리 후 페로브스카이트 구조를 가지는 PZT 박막의 CMP(chemical mechanical polishing) 공정에 따른 전기적 특성을 연구하였다. 강유전체 소자 적용을 위한 CMP 공정으로 제조된 PZT 박막 캐패시터의 P-E특성, I-V특성, 피로특성 등의 전기적 특성을 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.10
• /
• pp.851-857
• /
• 2002

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi~level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio were investigated. Finally, the CMP characteristics were discussed as a function of silica (SiO$_2$) abrasive contents.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.711-714
• /
• 2004

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. However, it still has various problems to the CMP equipment, in particular, among the CMP components, process variables are very important parameters in determining the removal rate and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the interaction between the various parameters such as turntable and head speed, down force and back pressure during CMP. Using statistical analysis techniques, a better understanding of the interaction behavior between the various parameters and the effect on removal rate, no-uniformity and ETC (edge to center) is achieved.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.1889-1892
• /
• 2003

The fabrication of micro-size patterning on alumina substrate is generated by laser direct writing, which has high precision and selectivity of various laser beam energies. The depth and width of patterns is affected by laser parameter such as laser power, scan rate. Through the chemical and mechanical polishing Pd seeds was effectively got rid of alumina substrate for selectivity electroless Ni plating. Thermal treatment is good method for changing electrical property of conductor line, because the treatment can control of the grain size.