• Applied Chemistry for Engineering
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• v.23 no.5
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• pp.501-504
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• 2012

In this study, etched Al electrodes with ordered arrays of pits and high aspect ratios were successively obtained using a patterned protect layer on the Al surface prepared with soft lithography method. Various methods were applied to fabricate a well ordered protect layer on the Al surface and the difference of etched Al surfaces with and without a protect layer was investigated by using SEM. It was found that the etched Al surfaces were affected by using either a protect layer or a non protect layer. As a result, the Al surface with the well ordered pits could be achieved by protect layer. However, the etched Al with nonuniform pits can be obtained without any protect layers.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.10 s.253
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• pp.1314-1319
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• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.

• Design & Manufacturing
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• v.15 no.4
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• pp.57-64
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• 2021

In recent materials industry, researches on the technology to manufacture super hydrophobic surface by effectively controlling the wettability of solid surface are expanding. Research on the fabrication of super hydrophobic surface has been studied not only for basic research but also for self-cleaning, anti-icing, anti-friction, flow resistance reduction in construction, textile, communication, military and aviation fields. A super hydrophobic surface is defined as a surface having a water droplet contact angle of 150 ° or more. The contact angle is determined by the surface energy and is influenced not only by the chemical properties of the surface but also by the rough structure. In this paper, maskless lithography using DMD, electro etching, anodizing and hot embossing are used to make the polymer resin PMMA surface super hydrophobic. In the fabrication of microstructure, DMDs are limited by the spacing of microstructure due to the structural limitations of the mirrors. In order to overcome this, maskless lithography using a transfer mechanism was used in this paper. In this paper, a super hydrophobic surface with micro and nano composite structure was fabricated. And the wettability characteristics of the micro pattern surface were analyzed.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.63-69
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• 2011

In this study, we report on the novel lithographic patterning method to fabricate organic thin film field effect transistors (OTFTs) based on photo and e-beam lithography with well-known silicon technology. The method is applied to fabricate pentacene-based organic field effect transistors. Owing to their solubility, sub-micron sized patterning of P3HT and PEDOT has been well established via micromolding in capillaries and inkjet printing techniques. Since the thermally deposited pentacene cannot be dissolved in solvents, other approach was done to fabricate pentacene FETs with a very short channel length (~30 nm), or in-plane orientation of pentacene molecules by using nanometer-scale periodic groove patterns as an alignment layer for high-performance pentacene devices. Here, we introduce $Al_2O_3$ film grown via atomic layer deposition method onto pentacene as a passivation layer. $Al_2O_3$ passivation layer on OTFTs has some advantages in preventing the penetration of water and oxygen and obtaining the long-term stability of electrical properties. AZ5214 and ma N-2402 were used as a photo and e-beam resist, respectively. A few micrometer sized lithography patterns were transferred by wet and dry etching processes. Finally, we fabricated micron sized pentacene FETs and measured their electrical characteristics.

• Proceedings of the Optical Society of Korea Conference
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• 1991.07a
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• pp.41-46
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• 1991

A block quantized binary phase hologram is introduced for optical interconnection and encoded with a simulated alogorithm to achieve high diffraction efficiency and superession of unwanted spots. The block quantized binary phase holograms encoded with the algorithm are fabricated with electron beam lithography and chemical etching. the fabricated holograms showed excellent perfoemances for optical interconnection.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.26.2-26.2
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.163-163
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• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.128-128
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• 2004

나노 스케일의 구조물 제작에 있어서 기존의 리소그래피 공정들이 가지는 한계점을 극복하기 위해서 다양한 방식의 새로운 공정들이 개발되고 있다. 특히, 기계-화학적 가공공정을 이용한 미세탐침 기반의 나노리소그래피 기술(Mechano-Chemical Scaning Probe based Lithography; MC-SPL)은 기존의 포토리소그래피 공정의 단점을 극복하고, 보다 경제적이며 패턴 디자인 변경이 유연한 미세 패턴 제작 기술임이 확인되었다.(중략)