• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.315-321
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• 2017

Antireflective pyramid arrays can be readily obtained via anisotropic etching in alkaline solution (KOH, NaOH), which is widely used in crystalline-Si (c-Si) solar cells. The periodic inverted pyramid arrays show even lower light reflectivity because of their superior light-trapping characteristics. Since this inverted pyramidal structures are mostly achieved using very complex techniques such as photolithograpy and laser processes requiring extra costs, here, we demonstrate the Cu-nanoparticle assisted chemical etching processes to make the inverted pyramidal arrays without the need of photolithography. We have mainly controlled the concentration of $Cu(NO_3)_2$, HF, $H_2O_2$ and temperature as well as time factors that affecting the reaction. Optimal inverted pyramid structure was obtained through reaction parameters control. The reflectance of inverted pyramid arrays showed < 10% over 400 to 1100 nm wavelength range while showing 15~20% in random pyramid arrays.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.32-32
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• 1992

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.213-216
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• 2007

LGP (light guide plate) of LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of the major components which affects the product quality of LCD. In the present study, the optical patterns of LGP(2.2") are manufactured by three different methods, namely, laser ablation, chemical etching and LiGA - reflow, respectively. The pattern surface images and roughness of mold and product were compared to check the optical characteristics. From the results of measurement the optical patterns fabricated by LiGA - reflow method showed the best geometric structure as intended in design and the lowest roughness among those.

• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.83-86
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• 2003

In this paper, arbitrary pulse power for electro chemical etching, which manufactures the groove of fluid dynamic bearing and aero dynamic bearing, is presented. For high precision manufacture, we generally use high precision CNC machine. However, this case has the disadvantage that cost is very expensive and bur due to bites of tool can be generated. So most of companies are interested in the method of electro chemical etching. But for more precision results, it is important to decision the parameters of electrical conditions, such as currents and frequency. We designed and made the arbitrary pulse power system easy to input the parameters for optimal conditions. Experimental results show the effectiveness of the system strategy proposed for the high precision manufacture.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.2
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• pp.111-118
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• 2001

Tungsten probe is the most important part of a probe card, which is widely used for the performance test of wafer chips. Electro chemical etching becomes an exclusive choice for mass production of the tungsten probes. In the mass production, not only the shape of the probe but also the shape distribution of machined probes is important. A new method is proposed for the mass production of the tungsten probes. Tungsten wires are separated by a distance, and dipped into electrolyte. The dipping rate is controlled to shape the probes. Several experimental tests are performed to study the machining characteristics. From the test results, machining parameters including electrical conditions and anode position showed significant influences on the shape, repeatability, precision and quality of sharp tips.

• Journal of the Korean institute of surface engineering
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• v.36 no.6
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• pp.466-474
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• 2003

To develop a method of detecting dross in coating layer on hot-dip galvanizing steel, chemical etching behavior of the artificial coating layers with top and bottom dross were investigated. After chemical etching with the mixture of picric acid and sodium thiosulfate, each of the top and bottom dross take its distinct color, and alloy layer in coating is also observed. Defects in the coating layers of HGI(hot rolled galvanized iron), CGI(continuous galvanized steel sheet) and GA(galvannealed steel) were analysed, and methods of dross detection which can be applied to inspection process in manufacture were suggested.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.476-481
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• 1999

Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.116-119
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• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.206-211
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• 2015

We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.

• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.351-356
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• 2001

Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 $^{\circ}C$ by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices.