• Journal of the Korean Society for Precision Engineering
• /
• v.24 no.5
• /
• pp.104-109
• /
• 2007

Photochemical patterning of self-assembled mono layers (SAMs) has been performed by diode pumped solid state (DPSS) 3rd harmonic Nd:$YVO_4$ laser with wavelength of 355 nm. SAMs patternings of parallel lines have subsequently been used either to generate compositional chemical patterns or fabricate microstructures by a wet etching. This paper describes a selective etching process with patterned SAMs of alkanetiolate molecules on the surface of gold. SAMs formed by the adsorption of alkanethiols onto gold substrate employs as very thin photoresists. In this paper, the influence of the interaction between the functional group of SAMs and the etching solution is studied with optimal laser irradiation conditions. The results show that hydrophobic functional groups of SAMs are more effective for selective chemical etching than the hydrophilic ones.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.5
• /
• pp.211-215
• /
• 2001

SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.

• Journal of the Korean institute of surface engineering
• /
• v.5 no.2
• /
• pp.1-4
• /
• 1972

We have studied about the optimum chemical etching and sensitizing conditions of the plating on plastics. As specimen 'Mitzubishi Nobren MM2A' was used. The results were as follow. 1) The optimum chemical etching conditions. Etched the specimens for $10{\sim}40$ minutes at $70{\sim}80^{\circ}C$ with the etching solution of table 1, and for $10{\sim}15$ minutes at $65{\sim}70^{\circ}C$ with the etching solution of table 2 Table 1. Etching solution (I) Composition : $H_2SO_4(95%)-Component : 250 ml, Composition : $H_3PO_4(85%)$ - Component : 75ml, Composition : $K_2Cr_2O_7$ - Component : 12.5g, 2) The optimum sensitizing conditions. Sensitized the specimens for $60{\sim}90$ seconds at $25^{\circ}C$ with the sensitizing solution of table 3 Table 2. Etching solution (II) Composition : $H_2SO_4(95%)$ - Component : 22.5ml, Composition : $H_3PO_4(85%)$ - Component : 15ml, Composition : $CrO_3$ - Component : 105g, Composition : Water - Component : 150 ml, Table 3. Sensitizing solution Composition : $SnCl_2$ - Component : 9g, Composition : HCl(35%) - Component : 36ml, Composition : Water - Component : 300 ml

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.6
• /
• pp.668-675
• /
• 2013

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp $H_2O_2$ (30%) and 3 vp $CH_3COOH$ (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of $Si_{0.8}Ge_{0.2}$ layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.279-281
• /
• 1997

The properties of Platinum dry etching were investigated in MICP(Magnetized Inductively Coupled Plasma). The problem with Platinum etching is the redeposition of sputtered Platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned Platinum structure produce feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape.[1] Generally, $Cl_2$ plasma is used for the fence-free etching.[1][2][3] The main object of this study was to investigate a new process technology for the fence-free Pt etching. Platinum was etched with Ar plasma at the cryogenic temperature and with Ar/$SF_6$ plasma at room temperature. In cryogenic etching, the height of fence was reduced to 20% at $-190^{\circ}C$ compared with that of room temp., but the etch profile was not fence-free. In Ar/$SF_6$ Plasma, chemical reaction took part in etching process. The trend of properties of Ar/$SF_6$ Plasma etching is similar to that of $Cl_2$ Plasma etching. Fence-free etching was possible, but PR selectivity was very low. A new gas chemistry for fence-free Platinum etching was proposed in this study.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.844-847
• /
• 2001

The application of laser direct etching has been discussed, and believed that the process is a very powerful method for micro machining. This study is focused on the micro patterning technology using laser direct etching process with no chemical damage of the material surface. A new introduced concept of energy synergy effect for surface micro machining is the combination of chemically ion reaction and laser thermal process. The etchant can't etch the material in room temperature, and used Ar laser has not power enough to machine. But, the machining is occurred in local area of the material by the combined energy. Using this process, the material is especially prevented from chemical damage for electric property. We have tested this new concept, and achieved a line with $1{mu}m$ width. The Ar laser with 488nm wavelength was used. The material was Si(100) wafer, and etchant is KOH solution. The application and flexibility of this process is in great hopes for MEMS structures and fabrication of the micro electric device parts.

• Current Photovoltaic Research
• /
• v.5 no.3
• /
• pp.75-82
• /
• 2017

High efficiency thin film solar cells require an absorber layer with high absorption and low defect, a transparent conductive oxide (TCO) film with high transmittance of over 80% and a high conductivity. Furthermore, light can be captured through the glass substrate and sent to the light absorbing layer to improve the efficiency. In this paper, morphology formation on the surface of glass substrate was investigated by using HF, mainly classified as random etching and periodic etching. We discussed about the etch mechanism, etch rate and hard mask materials, and periodic light trapping structure.

• Bulletin of the Korean Chemical Society
• /
• v.13 no.2
• /
• pp.187-192
• /
• 1992

The classical trajectory method, previously applied to the reactions of polyatomic molecules with fcc structured metal solids[S. C. Park, C. H. Cho, and C. H. Rhee, Bull. Kor. Chem. Soc., 11, $1(1990)]^1$ is extended to the collision energy dependence of the reaction of the Al solid by $SiCl_4$ molecules. We have calculated etching yields, degrees of anisotropy, kinetic energy distributions, and angular distributions for the reactions of the Al solid and compared with those for the reactions of the Cu solid. Over the range of collision energies we considered, the reactions of the Al soIid show higher etching yield and better anisotropy than the reactions of the Cu solid. Details of reaction mechanisms and the relevance of these calculations for the dry etching of CuAl alloy are discussed.

• Journal of the Korean Applied Science and Technology
• /
• v.32 no.3
• /
• pp.512-521
• /
• 2015

In this research, environmental friendly organic acid containing microetching system to improve adhesion strength between photoresist resin and Copper Clad Laminate(CCL) was developed without using strong oxidant $H_2O_2$. Etching rate and surface contamination on CCL were examined with various etching conditions with different etchants, organic acids and additives. to develope an optimum microetching condition. Etching solution with 0.04 M acetic acid showed the highest etching rate $0.4{\mu}m/min$. Etching solution with the higher concentration of APS showed the higher etching rate but surface contamination on CCL is very serious. In addition, stabilizer solution also played an important role to control the surface contamination. As a result of research, the etching solution containing 0.04 M of acetic acid, 0.1 M of APS with 4 g/L of stabilizer solution(ST-1) was best to improve adhesion between CCL and photoresist resin as well as showed the most clean and rough surface with the etching rate of $0.37{\mu}m/min$.

• Applied Chemistry for Engineering
• /
• v.20 no.2
• /
• pp.172-176
• /
• 2009

In this research, we defined the basic structure of soft etching material as $H_2SO_4/H_2O_2$, and used additives as inhibitor, surfactant, and stabilizer. By analyzing influence to surface roughness and change of etching rate related to type and density of additives, we research to develop soft etching material having the same adhesiveness as existing etching material. As a result of research, it is estimated that after densities of $H_2O_2$ and $H_2SO_4$ are 3%, 4% respectively, 500 ppm of amine type 5-Azol, as inhibitor, and 600 ppm of PEI, as surfactant, and 10 ppm of phosphoric acid, as stabilizer, are added, is the most reasonable surface roughness and etching rate. As result of solder test, it is estimated that solder resist ink did not peel away or curl up and have reliable adhesiveness.