• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.114-118
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• 2009

PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.

• Journal of Korean Society of Water and Wastewater
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• v.25 no.2
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• pp.177-184
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• 2011

Membrane fouling is an unavoidable phenomenon in operation of seawater reverse osmosis (SWRO) and major obstacle for economic and efficient operation. When fouling occurs on the membrane surface, the permeate flux is decreased, on the contrary, the trans-membrane pressure (TMP) is increased, therefore operation and maintaining costs and potential damage of membranes are able to the pivotal risks of the process. Chemical cleaning process is essential to prevent interruptions for effective RO membrane filtration process. This study focused on proper chemical cleaning condition for polyamide RO membranes of 4 companies. Several chemical agents were applied for chemical cleaning under numbers of operating conditions. Additionally, a monitoring tool of FEEM as autopsy analysis method is adapted for the prediction of organic bio-fouling.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.440-444
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• 2018

An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from $9.43{\times}10^{-12}$ to $3.43{\times}10^{-12}$ A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.688-694
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• 2009

A spray-type cleaning agent in utilizing dust-remover on PCB was chosen to study the cleanliness test and efficiency. In order to choose alternative environmental-friendly cleaning agents, it is important that the systematic selection procedures should be introduced and applied through the evaluation of their cleaning ability, environmental characteristics, and economical factors, and that the objective and effective evaluation methods of cleanliness should be established for the industry. A novel cleaning evaluation method with scanning electron microscopy/energy-dispersive X-ray analysis of surface observation evaluation method and an infra-red thermography camera(THERMOVISION A20 model) was studied in this work. The sound card(CT-2770 model) cut by $2{\times}2cm$ size was used as a part, and before and after the spray cleaning, the cleanliness was observed by the image analyzer of SEM and further the removal efficiency of dust was quantitatively evaluated by the component analysis of EDX. For the parts of P4TE model motherboard and IPC-A-36 PCB plate, before and after the spray cleaning, temperature differences were measured and compared at room temperature and 50 oven temperature by an infra-red thermography camera in the contaminants of dust and iron powder.

• Journal of Korean Society of Water and Wastewater
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• v.21 no.5
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• pp.559-569
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• 2007

The purposes of this study were to find the main foulant of membrane and the optimal chemical cleaning method for MF(microfiltration) drinking water treatment system using D dam water as water source. The MF pilot plant which can treat maximum $500m^3/d$ consisted of 3 racks and was operated for 10 months under various operation conditions. After 10 months operation, $1^{st}$ and $2^{nd}$ rack of membrane pilot plant system were cleaned chemically and the degree of the restoration of the fouled membrane in terms of the pure water flux was detemnined. Inorganic compounds which contained in chemical cleaning waste was analyzed by Inductively Coupled Plasma (ICP). One membrane module for 3rd rack was disjointed and membrane fouling materials, especially inorganic compounds were investigated by Electron Probe Microanlysis (EPMA) to elucidate the reason of TMP increase. And also, the various chemical reagents (1N HCl or $H_2SO_4$, oxalic acid as acid and 0.3% NaOCl as alkali) were tested by combination of acid and alkali to determine the optimal chemical cleaning method for the MF system using micro-modules manufactured using the disjointed module. It was verified that the inside and outside of membrane module was colorized with black. As a result of the quantitative and semi-qualitative analysis of membrane foulant by ICP, most of inorganic foulant was manganese which is hard to remove by inorganic acid such as HCI. Especially, it was observed by EPMA that Mn was attached more seriously in inside surface of membrane than in outside surface of that. It was supposed that Mn fouling in inside surface of membrane might be caused by the oxidation of soluble manganese (Mn(II)) to insoluble manganese ($MnO_2$) by chlorine containing in backwashing water. The optimal cleaning method for the removal of manganese fouling was consecutive cleaning with the mixture of 1N HCl and 1% of oxalic acid, 0.3% NaOCl, and 1N HCl showing 91% of the restoration of the fouled membrane.

• Textile Coloration and Finishing
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• v.3 no.2
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• pp.10-15
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• 1991

This study was to examine the anti-bacteria effect and the changes of chemical properties of chrome-tanned garment leathers on the preservative treatment. Various test methods, such as investigation of preservative treatment process, resistance test and chemical analysis by cleaning, antbbacterial test by shake flask method are carried out in this study. The results can be obtained as follows: 1. Bacterial reduction percentage of chrome-tanned garment leathers on the preservative treatment was 28.6%. 2. In the antbbacterial effect by dry cleaning, preservative treated leathers has no resistance. 3. Fats content has been removed by dry cleaning using perchloroethylene, so garment leathers properties were altered. 4. PH value was changed by dry cleaning. But once after fats removing, it was changed the little by dry cleaning numbers.

• Clean Technology
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• v.10 no.2
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• pp.73-87
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• 2004

In most of industrial fields, cleaning is employed for removing soils on their products or parts. Halogenated cleaning agents such as CFC-113, 1,1,1-TCE(1,1,1-trichloroethane), MC(methylene chloride) and TCE (trichloroethylene) have been used as cleaning ones in most of companies in the world since their excellent performance of cleaning ability and good material compatibility. However, CFC-113 and 1,1,1-TCE which are ozone destruction substances are not used any more in the advanced countries because of the which are ozone destruction substances are not used any more in the advanced countries because of the Montreal protocol. MC and TCE are now used restrictively at small part of industrial fields in most of countries since they are known to be hazardous or carcinogenic materials. Thus, it is indispensible that the alternative cleaning agents which are environmental-friendly and safe, and show good cleaning ability should be developed or utilized for replacement of the halogenated cleaning agents. Aqueous/semi-aqueous cleaning agents are evaluated to be promising alternative ones among various alternatives in environmental and economical view point. In this study, commercially available 12 aqueous and 6 semi-aqueous cleaning agents were selected and their physical properties, cleaning abilities, rinsing abilities and recycling of contaminated rinse water were measured and analyzed. Aqueous cleaning agents with higher wetting index showed better cleaning ability compared with those with lower wetting index. However wetting index did not have any correlation with cleaning ability in semi-aqueous cleaning agents. It was observed that soil concentration in aqueous and semi-aqueous cleaning agents should be maintained below the certain concentrations which depend on types of clearing agents. More than 70% soils in contaminated rinse water by some of aqueous and semi-aqueous clearing agents could be separated by simple settling method. This means that some cleaning agents with high oil-water separation efficiency will be effiective for recycling oil-contaminated rinse water. It was found that contaminated rinse water with aqueous agents was purified easiy by ultrafiltration method with PAN membrane of 30 kDa.

• Korean Chemical Engineering Research
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• v.45 no.2
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• pp.203-207
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• 2007

In this paper efficient method for particle removal from silicon wafers by usage of HF and ozone was studied. It was found that at least 0.3 vol% concentration of HF was required for particle removal and removal efficiency increased with the application of megasonic in ozonated water. Additional cleaning with minute amount of ammonia (0.01 vol%) after HF/Ozone step showed over 99% in removal efficiency. It is proposed that the superior cleaning efficiency of HF-Ozone-ammonia is due to micro-etching of silicon surface and impediment of particle re-adsorption in alkali environment. Compared to SC-1 cleaning method micro roughness has also been slightly improved. Therefore it is expected that HF-ozone-ammonia cleaning method is a viable alternative to the conventional wet cleaning methods.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.3
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• pp.1016-1022
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• 2010

An Experimental study of cleaning solution has been performed on a high capacity steam boiler burning heavy fuel oil to on-line cleaning of deposit. The deposit is mixture of soot, slag, ash, metal oxide and clinker. The traditional technology of deposit cleaning was carried hand-crafted. The conventional technology of boiler cleaning method is mechanical removal by the worker while the boiler shut down operation. In this experiment, the deposit of mixture of soot, slag, ash, metal oxide and clinker has been removed by the cleaning agents without shut down of boiler burning. This study found out the optimum cleaning solution composition. The best results have been obtained when the mixture of ammonium nitrate and $MgNO_3$ were used in cleaning solution. The various transition metal effect was investigated for optimum mixing condition. In this research, the metal compound additive of the clean solution compoition was obtained. The combustion efficiency was improved by on-line cleaning with derived clean solution compoition. On-line cleaning method prevents the fouling and corrosion in the boiler and heat exchanger.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.99-104
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• 1993

We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.