• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
• /
• pp.270-273
• /
• 2002

Conditioning은 CMP(Chemical Mechanical Planarization)에 필수적인 공정중의 하나이다. Conditioning의 목적은 removal rate와 uniformity를 CMP 공정 중에서 일정하게 유지시키는데 목적이 있다. 예전의 conditioning disks는 stainless steel substrate 위에 diamond 입자를 올리고 Ni전기도금을 결합시켜서 사용하였다. 그러나, CMP 공정 중에 Ni의분해로 인한 금속의 오염과 diamond abrasive의 분리로 인하여 scratch 문제가 발생하였다. 이 문제를 해결하기 위해서 ceramic substrate와 그것을 정밀 가공하는 기술을 응용함으로써 본래의 conditioning disks가 가지고 있는 diamond 입자의 분리와 metals 분해의 문제를 해결할 수 있게 되었다.

• 한국세라믹학회지
• /
• 제40권2호
• /
• pp.167-171
• /
• 2003

기계적 방법으로 합성된 CeO$_2$분말을 연마입자로 하여 STI용 CMP 슬러리를 제조하였다. 연마입자는 정전기적 방법과 입체적 방법으로 수계에서 안정화시킬 수 있었으며, 장기 안정성을 위해서는 입체적 방법에 의한 안정화가 유효하였다. 50$0^{\circ}C$와 $700^{\circ}C$에서 합성된 CeO$_2$를 이용하여 CMP 슬러리를 제조하고, SiO$_2$와 Si$_3$N$_4$가 블랭킷 형태로 증착된 웨이퍼를 연마한 결과 연마능률과 선택비는 연마입자의 합성조건과 분산 안정성, 슬러리의 pH 등에 의해 영향을 받았다.

• 한국전기전자재료학회논문지
• /
• 제18권1호
• /
• pp.12-16
• /
• 2005

Chemical mechanical polishing (CMP) process is one of the most useful methods for improving the surface roughness of films. The effects of CMP on the surface morphology of WO$_3$ films prepared by RF sputtering system were investigated in this paper. A removal rate of films increased, and the uniformity performance of surface decreased with the addition of an oxidizer to the tungsten slurry. Non-uniformity performance of surface was superior as its value was below 5 % when oxidizers of 5.0 vol% and 2.5 vol%, respectively, were added to the tungsten slurry. The optimized oxidizer concentration, reflected both the improved roughness values and hillock-free surface with the good uniformity performance, was 5.0 vol% as an atomic force microscopy(AFM) analysis of thin film topographies. Our CMP results will be a useful reference for advanced technology of thin films for gas sensor applications in the near future.

• 한국전기전자재료학회논문지
• /
• 제18권1호
• /
• pp.24-29
• /
• 2005

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. Copper has been the candidate metallization material for ultra-large scale integrated circuits (ULSIs), owing to its excellent electro-migration resistance and low electrical resistance. However, it still has various problems in copper CMP process. Thus, it is important to understand the effect of the process variables such as turntable speed, head speed, down force and back pressure are very important parameters that must be carefully formulated in order to achieve desired the removal rates and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the main effect of the variables and the interaction between the various parameters during CMP. A better understanding of the interaction behavior between the various parameters and the effect on removal rate, non-uniformity and ETC (edge to center) is achieved by using the statistical analysis techniques. In the experimental tests, the optimum parameters which were derived from the statistical analysis could be found for higher removal rate and lower non-uniformity through the above DOE results.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
• /
• pp.12-14
• /
• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP). process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied. aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
• /
• pp.37-40
• /
• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• 전자공학회논문지D
• /
• 제35D권9호
• /
• pp.20-25
• /
• 1998

대면적 평탄화 및 미세패턴형성기술로 각광받고 있는 CMP(chemical mechanical polishing) 공정을 이용하여 SiO₂ trench 패턴의 피치크기와 밀도에 따른 Cu의 평탄화 과정과 평탄화 이후의 표면 profile을 AFM(atomic forced microscopy)으로 측정하고 분석하였다. 실험결과, 평탄화 초기 연마율은 패턴밀도가 높고 피치크기가 작을수록 연마율이 증가하였으며, 초기 평탄화 이후 연마율이 급속히 감소함을 알 수 있었다. 말기 평탄화 이후, 전체 패턴의 평균 rms roughness는 120Å이었다. 그러나, 패턴피치 크기가 2㎛ 이하이고, 50% 패턴밀도를 갖는 패턴의 경우에는 Cu의 일부분이 120∼330Å 정도의 깊이로 떨어져 나가는 현상과 SiO₂와 Cu의 경계면에 oxide erosion 현상이 나타났으며, 패턴 피치 크기가 10㎛ 및 15㎛에서는 Cu와 SiO₂경계면 부분에 Cu가 260∼340Å 정도로 trench 되어 있는 것을 볼 수 있었다. 또한, SiO₂와 Cu의 패턴내부 및 접합면에서 생기는 수백 Å이하의 peeling 및 deeping 현상의 원인과 해결방안에 대해 논의하였다.

• Tribology and Lubricants
• /
• 제20권5호
• /
• pp.284-291
• /
• 2004

We present a three-dimensional average flow model considering elastic deformation of pad asperities for chemical mechanical planarization. To consider the contact deformation of pad asperities in the calculation of the flow factor, three-dimensional contact analysis of a semi-infinite solid based on the use of influence functions is conducted from computer generated three dimensional roughness data. The average Reynolds equation and the boundary condition of both force and momentum balance are used to investigate the effect of pad roughness and external pressure conditions on film thickness and wafer position angle.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.46-49
• /
• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2011년도 춘계학술대회 논문집
• /
• pp.183-184
• /
• 2011