• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.497-498
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• 2018

In the fire scene, it is difficult to see 1m ahead because of power failure, smoke and toxic gas, even with thermal imaging camera and Xenon searchlight. Analysis of the smoke particles in the fire scene shows that even if the smoke is $5{\mu}m$ or less in wavelength, it is difficult to obtain a front view when using a conventional thermal imaging camera if the visual distance exceeds 1 meter. In the case of black smoke with a particle wavelength of $5{\mu}m$ or more, a space permeation sensor technology using various sensors other than a single sensor is required because chemical materials, gas, and water molecules are mixed. Firefighters need a smoke detection technology for smoke detection and spatial information visualization for forward safety view.In this paper, we design the interface of the information processing system with 32bit CPU core and peripheral circuit. We also implemented and simulated the interface with Lidar sensor. Through this, we provide interface that can implement information processing system of human enhancement fire helmet in the future.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.192-197
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• 2009

Carbon nanotubes (CNT) were used as a catalyst support where catalytically active Pd and Pt metal particles decorated the outside of the external CNT walls. In this study, Pd and Pt nanoparticles supported on $HNO_3$-treated CNT were prepared by microwave-assisted heating of the polyol process using $PdCl_2$ and $H_2PtCl_6{\codt}6H_2O$ precursors, respectively, and were then characterized by SEM, TEM, and Raman. Raman spectroscopy showed that the acid treated CNT had a higher intensity ratio of $I_D/I_G$ compared to that of non-treated CNT, indicating the formation of defects or functional groups on CNT after chemical oxidation. Microwave irradiation for total two minutes resulted in the formation of Pd and Pt nanoparticles on the acid treated CNT. The sizes of Pd and Pt nanoparticles were found to be less than 10 nm and 3 nm, respectively. Furthermore, the $SnO_2$ films doped with CNT decorated by Pd and Pt nanoparticles were prepared, and then the $NO_2$ gas response of these sensor films was evaluated under $1{\sim}5\;ppm$ $NO_2$ concentration at $200^{\circ}C$. It was found that the sensing property of the $SnO_2$ film sensor on $NO_2$ gas was greatly improved by the addition of CNT-supported Pd and Pt nanoparticles.

• Biotechnology and Bioprocess Engineering:BBE
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• v.5 no.2
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• pp.150-152
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• 2000

The investigation of electroantennogram (EAG) using insect antennad has been primarily focused on the measurement of insect pheromone. Insect has highly specialized olfactroy receptors inside their antennae. In this paper, EAG was applied to detect general oborants and the feasibility of this system for the olfactroy biosensor was investigated. Electroantennogram measurement was carried out using the antennae of male silkworm moth, bombyx mori, and ammonia gas as the model odorant. EAG parametres including peak ampiltude increased linearly with the ammonia concentration and the reproducible electrical signals were generated at least for 2 hrs after the antenna was cut off from the sulkworm moth.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.150-153
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• 1997

Langmuir-Blodgett(LB) technique is one of the ways of fabricating organic ultra-thin films. It is well known that It has the advantage to control the alignment and orientation of the molecules in the films. Metallo-phthalocyanines(MPcs) are sensitive to electron affinitive toxic gaseous molecules, such as NO$_2$, NO, SO$_2$. MPcs are thermal, optical, mechanical, chemical stable. Therefore, it is interesting to prepare phthalocyanine LB films containing copper as a chemical sensor for NO$_2$ and SO$_2$ gas and test their sensitivity to these toxic gases. In this study, thin films of Octa-dodecylosy copper-phthalocyanine were prepared by LB technique. $\pi$-A isotherm, transfer ratio, UV-VIS. spectroscopy of these films were investigated. Also current-voltage(I-V) characteristics of these was auto investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.