• 터널과지하공간
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• 제32권1호
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• pp.30-58
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• 2022

고준위방사성폐기물 심지층처분장은 공학적방벽과 천연방벽의 다중방벽으로 이루어져 있으며 각 방벽재 사이의 상호작용에 의해 처분시스템의 전반적인 장기 건전성이 영향을 받게 된다. 특히 공학적방벽재인 압축 벤토나이트 완충재와 천연방벽인 근계암반의 상호작용에 의한 완충재의 침식 및 파이핑 현상은 사용후핵연료의 붕괴열 발산, 지하수 유입 저지 및 핵종 이동 저지의 역할을 수행하는 완충재의 성능을 저하시키기 된다. 처분 초기에 벤토나이트 완충재가 흡수할 수 있는 물의 양보다 많은 유량이 근계암반의 절리로부터 유입되면 잉여 지하수로 인한 수압이 발생하고 이로 인해 완충재 자체 및 갭채움재 주변으로 파이핑 현상이 발생할 수 있다. 또한 지하수와 벤토나이트 완충재의 물리-화학적 상호작용으로 인하여 완충재의 표면의 팽윤 및 겔/졸화로 인하여 완충재의 표면에서 침식이 발생할 수 있다. 따라서, 이러한 침식 및 파이핑 현상이 발생하는 조건과 이로 인한 완충재의 건전성을 명확하게 평가하는 것이 처분장의 장기건전성 평가를 위해 반드시 필요하다. 처분선진국들에서는 주로 실내 및 공학규모 실험이 수행되고 있으며 일부 전산 모델 개발이 진행되고 있는 상황이지만 실험에서 관측된 현상들을 복합적으로 모사할 수 있는 전산 모델은 개발되지 않았다. 국내에서도 다양한 침식/파이핑 시나리오에 대한 연구나 열-수리-역학-화학적 복합거동을 고려한 연구는 수행되지 않았다. 본 기술 보고에서는 현재까지 수행된 국내외 벤토나이트 침식 및 파이핑 연구와 이들이 주로 고려한 영향인자를 파악하였다. 실험값을 검증하기 위해 제안된 전산 모델들을 소개하고 향후 완충재 침식 및 파이핑 현상 규명을 위한 연구 수행 방향에 대해 정리하였다. 본 논문에서 검토한 다양한 시험 및 모델링 사례를 바탕으로 향후 국내 심층처분장환경을 고려한 압축 벤토나이트 완충재 침식 및 파이핑 관련 연구가 필요하다고 판단된다.

• Journal of Microbiology and Biotechnology
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• 제33권8호
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• pp.1076-1083
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• 2023

Poly(3-hydroxybutyrate) (PHB) is a biodegradable and biocompatible bioplastic. Effective PHB degradation in nutrient-poor environments is required for industrial and practical applications of PHB. To screen for PHB-degrading strains, PHB double-layer plates were prepared and three new Bacillus infantis species with PHB-degrading ability were isolated from the soil. In addition, phaZ and bdhA of all isolated B. infantis were confirmed using a Bacillus sp. universal primer set and established polymerase chain reaction conditions. To evaluate the effective PHB degradation ability under nutrient-deficient conditions, PHB film degradation was performed in mineral medium, resulting in a PHB degradation rate of 98.71% for B. infantis PD3, which was confirmed in 5 d. Physical changes in the degraded PHB films were analyzed. The decrease in molecular weight due to biodegradation was confirmed using gel permeation chromatography and surface erosion of the PHB film was observed using scanning electron microscopy. To the best of our knowledge, this is the first study on B. infantis showing its excellent PHB degradation ability and is expected to contribute to PHB commercialization and industrial composting.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.213-217
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Transactions on Electrical and Electronic Materials
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• 제8권1호
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• pp.1-4
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• 2007

This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• 대한토목학회논문집
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• 제12권2호
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• pp.55-66
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• 1992

인공해수 및 5종류의 약품용액에 시멘트풀, 모르터 및 콘크리트 공시체를 침지하여 강도 및 중량 변화를 측정하고 X-ray, SEM 및 EDS로서 반응생성물과 미세구조를 분석 고찰하였다. 연구결과 황산 및 황산염용액에서는 ${SO_4}^{2-}$ 이온의 침투로 인한 ettringite와 석고의 생성이 열화의 원인이 되었다. 염화물용액에서는 $Cl^-$ 이온의 침투가 콘크리트를 열화시키는 중요한 요인이 되었음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.389-392
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and non-uniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between particle size and CMP with particle size analysis of used slurry.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.184-187
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) lyaer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2-CMP$ process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis or used slurry.

• 한국정밀공학회지
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• 제21권7호
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.