• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.8
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• pp.5213-5218
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• 2014

Organic memory devices were made using the plasma polymerization method. The memory device consisted of ppMMA(plasma polymerization MMA) thin films as the tunneling and insulating layer, and a Au thin film as the memory layer, which was deposited by thermal evaporation. The organic memory operation theory was developed according to the charging and discharging characteristics of floating gate type memory, which would be measured by the hysteresis voltage and memory voltage with the gate voltage values. The I-V characteristics of the fabricated memory device showed a hysteresis voltage of 26 [V] at 60 ~ -60 [V] double sweep measuring conditions. The programming voltage was applied to the gate electrode in accordance with the result of this theory. A programming voltage of 60[V] equated to a memory voltage of 13[V], and 80[V] equated to a memory voltage of 18[V]. The memory voltage of approximately 40 [%]increased with increasing programming voltage. The charge memory layer charging or discharging according to the theory of the memory was verified experimentally.

• The Journal of Korean Institute of Information Technology
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• v.16 no.12
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• pp.101-107
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• 2018

In wireless sensor network technology, which has been applied to various fields, the power supply and the power management of sensors are the most important issues. For this reason, a new concept of power supply and power management device is required. In this paper, we developed an autonomous independent power supply system that supplies the stable power to a sensor node without an additional external input by applying the energy harvesting technology using the electromagnetic induction principle by utilizing the current flowing in the transmission line. The proposed autonomous independent power supply system consists of a power supply using Power CT and a power management system including a charging circuit. The power management device uses a voltage limiter circuit and a monitoring circuit of charging voltage and current to ensure the safety of charging of the battery. In order to verify the performance of the proposed system, we applied it to the SVL diagnostic system and confirmed that it operates stably.

• The Journal of the Acoustical Society of Korea
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• v.3 no.2
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• pp.13-22
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• 1984

A surface acoustic wave signal processing device using the silicon surface state is presented and shown capable of storing a reference signal and later correlating another signal with the stored reference. The device memory consists of the storage of the spatial 2k pattern of an acoustic wave as stored charges in the surface state of silicon surface. Results of experiments are presented which characterize the operation of device. Simpliied models for charging process and nonlinear acoustoelectric interactions based on consideration of single surface state at the surface of silicon The validity of simplified model has been qualitatibely confirmed with experimental results and the application of this device to aprogrammable matched filter of communication is considered.

• Journal of the Korean Society of Safety
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• v.16 no.2
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• pp.57-62
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• 2001

In order to analyze the mechanism of semiconductor device damages by ESD, this paper adopts a new charged-device model(CDM), field-induced charged nudel(FCDM), simulator that is suitable for rapid routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. The high voltage applied to the device under test is raised by the fie]d of non-contacting electrodes in the FCDM simulator. which avoids premature device stressing and permits a faster test cycle. Discharge current md time are measured and calculated The FCDM simulator places the device at a huh voltage without transferring charge to it, by using a non-contacting electrode. The only charge transfer in the FCMD simulator happens during the discharge. This paper examine the field charging mechanism, measure device thresholds, and analyze failure modes. The FCDM simulator provides a Int and inexpensive test that faithfully represents factory ESD hazards. The damaged devices obtained in the simulator are analyzed and evaluated by SEM Also the results in this paper can be used for to prevent semiconductor devices from ESD hazards.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1021-1027
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• 2012

In this paper, multi-string power balancing system for streetlight was developed. Accordingly, the components of the system was developed, unit converters, MPPT control unit, a bank of Li-ion battery and controls the charging and discharging. Loss by improving the efficiency of the system through the parallel operation of the unit converter output will be reduced. And by improving the efficiency of the system through the unit converter parallel operation, output losses will be reduced. Charging and discharging efficiency of the device used in a typical solar streetlight is calculated based on the maximum power input. Because of the variation of the input power has a weakness. In this paper, flexible to changes in the input, and a system was developed to minimize the cost per watt. Measure the performance of the unit module from the system, the result was more than 91%. And the charging capacity 12 V/105 Ah, module power 180 W, respectively. Should expect to be able to improve performance through continuous monitoring in the future.

• Journal of Power Electronics
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• v.10 no.1
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• pp.27-33
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• 2010

This paper presents a bidirectional DC-DC converter suitable for low-voltage super capacitor-based electric energy storage systems. The DC-DC converter presented here consists of a full-bridge circuit and a current-fed push-pull circuit with a high frequency (HF) transformer-link. In order to reduce the device-conduction losses due to the large current of the super capacitor as well as unnecessary ringing, synchronous rectification is employed in the super capacitor-charging mode. A wide range of voltage regulation between the battery and the super capacitor can be realized by employing a Phase-Shifting (PS) Pulse Width Modulation (PWM) scheme in the full-bridge circuit for the super capacitor charging mode as well as the overlapping PWM scheme of the gate signals to the active power devices in the push-pull circuit for the super capacitor discharging mode. Essential performance of the bidirectional DC-DC converter is demonstrated with simulation and experiment results, and the practical effectiveness of the DC-DC converter is discussed.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.4
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• pp.326-333
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• 2011

This paper studies battery charging methods using existing motor inductance and 3-phase inverters without an additional charger to charge the battery of Plug-in Hybrid Electric Vehicles (PHEVs). As inverter switch control and motor coil used as the energy storage device for boosting make the system the boost converter, the additional charger is eliminated and volume, weight, and cost for the charger are reduced. Various charging methods according to topologies of the system and configurations of the controller are analyzed and verified by PSIM simulation.

• Journal of the Korean Society of Safety
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• v.17 no.4
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• pp.94-100
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• 2002

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipments need to be more alert to the problem of electrostatic discharges(ESD). In order to analyze damage characteristics of semiconductor device damaged by ESD, this study adopts a new charged-device model(CDM), field-induced charged model(FCDM) simulator that is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. High voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoids premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The characteristics of electrostatic attenuation of domestic semiconductor devices are investigated to evaluate the ESD phenomena in the semiconductors. Also, the field charging mechanism, the device thresholds and failure modes are investigated and analyzed. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. The results obtained in this paper can be used to prevent semiconductor devices form ESD hazards and be a foundation of research area and industry relevant to ESD phenomena.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.210-214
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• 2007

Silicon nanoparticles are widely studied as a material with great potential for wide applications. For application to present industry, it should be easy to control the characteristics of nanoparticle including the size and structure. In this paper, we investigated the formation of Si nanoparticle using pulse plasma technology. Plasma technology is already quite common in device industry and the size of nanoparticle can be easily controlled according to plasma pulse duration. An inductively-coupled plasma chamber with RF power (13.56 MHz) was used with DC-biased grid $(-200\sim+200\;V)$ installed above the substrate. In order to measure the shape and size of nanoparticle, TEM was used. It was found that the size of nanoparticles can be controlled well with the plasma pulse duration and the collection efficiency is increased with the use of either negative or positive DC-bias.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1800-1803
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• 2002

The pulsed power system was widely making use good of many industrial and environments. The pulse generator generally required for short pulse duration and high peak value was forced to consider its volume and economy. In this paper, this system is designed and fabricated which has a compact size of pulse generator with switched MOSFET. We have studied the removal of rust material using Arc discharging in pulsed power system. It have tested their characteristics by adjusting variable voltage charging and pulse repetition rate. As a result, We can eliminate rust materials with this device.